JPS5666056A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5666056A JPS5666056A JP14152779A JP14152779A JPS5666056A JP S5666056 A JPS5666056 A JP S5666056A JP 14152779 A JP14152779 A JP 14152779A JP 14152779 A JP14152779 A JP 14152779A JP S5666056 A JPS5666056 A JP S5666056A
- Authority
- JP
- Japan
- Prior art keywords
- polycrystalline
- layers
- semiconductor device
- stepless
- wirings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain the electrodes or wirings of a stepless semiconductor device by a method wherein an ion is implanted selectively to a polycrystalline Si thin film to annex an impurity, a laser beam is irradiated to activate it in a short time preventing lateral diffusion. CONSTITUTION:The polycrystalline Si thin film 43 containing a very small or zero quantity of an impurity is adhered on the SiO2 film 42 on an Si substrate 41. Ion implanted layers 45, 45' are formed applying an Si3N4 mask 44. The mask is removed and a laser beam is irradiated to activate only the layers 45, 45' and are insulated by the other polycrystalline Si layers, and the stepless electrodes or wirings are completed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14152779A JPS5666056A (en) | 1979-11-01 | 1979-11-01 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14152779A JPS5666056A (en) | 1979-11-01 | 1979-11-01 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5666056A true JPS5666056A (en) | 1981-06-04 |
Family
ID=15294035
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14152779A Pending JPS5666056A (en) | 1979-11-01 | 1979-11-01 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5666056A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60173859A (en) * | 1984-02-20 | 1985-09-07 | Nec Corp | Semiconductor ic device |
JPS62285445A (en) * | 1986-06-03 | 1987-12-11 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH0294519A (en) * | 1988-09-30 | 1990-04-05 | Sony Corp | Manufacture of semiconductor device |
-
1979
- 1979-11-01 JP JP14152779A patent/JPS5666056A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60173859A (en) * | 1984-02-20 | 1985-09-07 | Nec Corp | Semiconductor ic device |
JPS62285445A (en) * | 1986-06-03 | 1987-12-11 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPH0587145B2 (en) * | 1986-06-03 | 1993-12-15 | Tokyo Shibaura Electric Co | |
JPH0294519A (en) * | 1988-09-30 | 1990-04-05 | Sony Corp | Manufacture of semiconductor device |
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