JPS5666056A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5666056A
JPS5666056A JP14152779A JP14152779A JPS5666056A JP S5666056 A JPS5666056 A JP S5666056A JP 14152779 A JP14152779 A JP 14152779A JP 14152779 A JP14152779 A JP 14152779A JP S5666056 A JPS5666056 A JP S5666056A
Authority
JP
Japan
Prior art keywords
polycrystalline
layers
semiconductor device
stepless
wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14152779A
Other languages
Japanese (ja)
Inventor
Kunio Aomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14152779A priority Critical patent/JPS5666056A/en
Publication of JPS5666056A publication Critical patent/JPS5666056A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To obtain the electrodes or wirings of a stepless semiconductor device by a method wherein an ion is implanted selectively to a polycrystalline Si thin film to annex an impurity, a laser beam is irradiated to activate it in a short time preventing lateral diffusion. CONSTITUTION:The polycrystalline Si thin film 43 containing a very small or zero quantity of an impurity is adhered on the SiO2 film 42 on an Si substrate 41. Ion implanted layers 45, 45' are formed applying an Si3N4 mask 44. The mask is removed and a laser beam is irradiated to activate only the layers 45, 45' and are insulated by the other polycrystalline Si layers, and the stepless electrodes or wirings are completed.
JP14152779A 1979-11-01 1979-11-01 Manufacture of semiconductor device Pending JPS5666056A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14152779A JPS5666056A (en) 1979-11-01 1979-11-01 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14152779A JPS5666056A (en) 1979-11-01 1979-11-01 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5666056A true JPS5666056A (en) 1981-06-04

Family

ID=15294035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14152779A Pending JPS5666056A (en) 1979-11-01 1979-11-01 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5666056A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173859A (en) * 1984-02-20 1985-09-07 Nec Corp Semiconductor ic device
JPS62285445A (en) * 1986-06-03 1987-12-11 Toshiba Corp Semiconductor device and manufacture thereof
JPH0294519A (en) * 1988-09-30 1990-04-05 Sony Corp Manufacture of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173859A (en) * 1984-02-20 1985-09-07 Nec Corp Semiconductor ic device
JPS62285445A (en) * 1986-06-03 1987-12-11 Toshiba Corp Semiconductor device and manufacture thereof
JPH0587145B2 (en) * 1986-06-03 1993-12-15 Tokyo Shibaura Electric Co
JPH0294519A (en) * 1988-09-30 1990-04-05 Sony Corp Manufacture of semiconductor device

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