JPS5694655A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5694655A
JPS5694655A JP17236379A JP17236379A JPS5694655A JP S5694655 A JPS5694655 A JP S5694655A JP 17236379 A JP17236379 A JP 17236379A JP 17236379 A JP17236379 A JP 17236379A JP S5694655 A JPS5694655 A JP S5694655A
Authority
JP
Japan
Prior art keywords
substrate
layer
region
films
grooves
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17236379A
Other languages
Japanese (ja)
Inventor
Jun Tamaoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP17236379A priority Critical patent/JPS5694655A/en
Publication of JPS5694655A publication Critical patent/JPS5694655A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/94—Metal-insulator-semiconductors, e.g. MOS
    • H01L29/945—Trench capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain an MOS capacity element having a large capacity per unit area by making V-shaped grooves in the surface of a semiconductor substrate and by providing a derivative layer in a surface part including the grooves. CONSTITUTION:SiO2 films 22 and 22' are formed in the peripheral part of a P type Si substrate 21 and a mask formed of a resist film 23 for forming the V-shaped grooves is provided on the films and on the surface of the substrate 21 surrounded by the former. Next, the substrate 21 is dipped in the mixture liquid of water and hydrazine so as to apply anisotropic etching to the exposed region of the substrate 21, whereby a plurality of V-shaped grooves 24 are formed. After that, the film 23 is removed and N type impurities are diffused by using the films 22 and 22' as a mask, whereby an N<+> type region 25 is formed within the substrate 21 including the grooves 24. Next, heat treating being applied, only the surface layer part of the region 25 is changed into an SiO2 layer 26 which is to be the derivative layer and thereto an Al electrode layer 27 is fitted, while also to the region 25 is fitted an electrode layer 28. In this way, the SiO2 layer 26 is held between the region 25 and the electrode layer 27 and thus the effective area of the device is increased.
JP17236379A 1979-12-27 1979-12-27 Semiconductor device Pending JPS5694655A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17236379A JPS5694655A (en) 1979-12-27 1979-12-27 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17236379A JPS5694655A (en) 1979-12-27 1979-12-27 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5694655A true JPS5694655A (en) 1981-07-31

Family

ID=15940511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17236379A Pending JPS5694655A (en) 1979-12-27 1979-12-27 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5694655A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5043780A (en) * 1990-01-03 1991-08-27 Micron Technology, Inc. DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance
US5208176A (en) * 1990-01-16 1993-05-04 Micron Technology, Inc. Method of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturization
US5327375A (en) * 1988-07-08 1994-07-05 Eliyahou Harari DRAM cell utilizing novel capacitor
US5519238A (en) * 1991-10-02 1996-05-21 Industrial Technology Research Institute Rippled polysilicon surface capacitor electrode plate for high density dram
KR101015009B1 (en) * 2008-04-18 2011-02-16 주식회사 케이이씨 Capacitor and fabticating method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5327375A (en) * 1988-07-08 1994-07-05 Eliyahou Harari DRAM cell utilizing novel capacitor
US5043780A (en) * 1990-01-03 1991-08-27 Micron Technology, Inc. DRAM cell having a texturized polysilicon lower capacitor plate for increased capacitance
US5208176A (en) * 1990-01-16 1993-05-04 Micron Technology, Inc. Method of fabricating an enhanced dynamic random access memory (DRAM) cell capacitor using multiple polysilicon texturization
US5519238A (en) * 1991-10-02 1996-05-21 Industrial Technology Research Institute Rippled polysilicon surface capacitor electrode plate for high density dram
KR101015009B1 (en) * 2008-04-18 2011-02-16 주식회사 케이이씨 Capacitor and fabticating method thereof

Similar Documents

Publication Publication Date Title
JPS5694655A (en) Semiconductor device
JPS559414A (en) Manufacturing method of semiconductor device
JPS5658269A (en) Mos type semiconductor device
JPS54154272A (en) Contact forming method for semiconductor device
JPS57194525A (en) Manufacture of semiconductor device
JPS54130883A (en) Production of semiconductor device
JPS5791537A (en) Manufacture of semiconductor device
JPS57149774A (en) Semiconductor device
JPS5654070A (en) Method of manufacturing semiconductor device
JPS5513953A (en) Complementary integrated circuit
JPS5534433A (en) Preparation of semiconductor device
JPS5766651A (en) Manufacture of semiconductor device
JPS54136276A (en) Manufacture for semiconductor device
JPS57141966A (en) Manufacture of semiconductor device
JPS5780768A (en) Semiconductor device
JPS5656675A (en) Semiconductor device on insulated substrate
JPS55157242A (en) Manufacture of semiconductor device
JPS5683974A (en) Semiconductor device and manufacture
JPS5656674A (en) Mosfet of high pressure resisting property and preparation thereof
JPS5683976A (en) Semiconductor device and manufacture
JPS55102269A (en) Method of fabricating semiconductor device
JPS6468965A (en) Manufacture of semiconductor device
JPS5679446A (en) Production of semiconductor device
JPS57193062A (en) Manufacture of semiconductor device
JPS54139486A (en) Manufacture of semiconductor device