JPS5683974A - Semiconductor device and manufacture - Google Patents
Semiconductor device and manufactureInfo
- Publication number
- JPS5683974A JPS5683974A JP16125379A JP16125379A JPS5683974A JP S5683974 A JPS5683974 A JP S5683974A JP 16125379 A JP16125379 A JP 16125379A JP 16125379 A JP16125379 A JP 16125379A JP S5683974 A JPS5683974 A JP S5683974A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- sio2
- type
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an MIS element having a fine pattern by a method wheren when respective regions of a surce, drain and diffusion wiring are formed on a semiconductor substrate, a polycrystal Si film containing impurity is provided and the impurity within it is diffused. CONSTITUTION:An SiO2 is attached on the surface of a P type Si substrate 1, resist film 6 is formed through an Si3N4 film 3 on an active region 4 and diffusion wiring region 5 alone intended to be formed, and B<+>-ions are injected to effect forming a P<-> type inversion preventive region 7 in the substrate 1 between those regions. Then, the films 6, 3 are removed and the heat treatment gives birth to a thick field SiO2 film 8 on the region 7 to accumulate the N type polycrystal Si film 9 on the whole surface including the film 8. After that, resist films 11 and 12 having openings are formed on the region 4 and the film 8 and the region 4 is perforated with a groove 13 by etching. Subsequently, a gate SiO2 film 14 and an SiO2 film 15 continued thereto are formed in the groove 13, the application of heat treatment at this time causes the impurity in the film 9 to be diffused and the respective regions 16, 17, 18 of the N<+> type source, drain and diffusion wiring to be produced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16125379A JPS5683974A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16125379A JPS5683974A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5683974A true JPS5683974A (en) | 1981-07-08 |
Family
ID=15731566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16125379A Pending JPS5683974A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5683974A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166763A (en) * | 1988-07-20 | 1992-11-24 | Mitsubishi Denki Kabushiki Kaisha | Static type semiconductor memory device and method of manufacturing thereof |
US5200918A (en) * | 1988-07-20 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory with polysilicon source drain transistors |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
-
1979
- 1979-12-12 JP JP16125379A patent/JPS5683974A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5166763A (en) * | 1988-07-20 | 1992-11-24 | Mitsubishi Denki Kabushiki Kaisha | Static type semiconductor memory device and method of manufacturing thereof |
US5200918A (en) * | 1988-07-20 | 1993-04-06 | Mitsubishi Denki Kabushiki Kaisha | Static semiconductor memory with polysilicon source drain transistors |
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