JPS5683974A - Semiconductor device and manufacture - Google Patents

Semiconductor device and manufacture

Info

Publication number
JPS5683974A
JPS5683974A JP16125379A JP16125379A JPS5683974A JP S5683974 A JPS5683974 A JP S5683974A JP 16125379 A JP16125379 A JP 16125379A JP 16125379 A JP16125379 A JP 16125379A JP S5683974 A JPS5683974 A JP S5683974A
Authority
JP
Japan
Prior art keywords
film
region
sio2
type
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16125379A
Other languages
Japanese (ja)
Inventor
Takeo Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP16125379A priority Critical patent/JPS5683974A/en
Publication of JPS5683974A publication Critical patent/JPS5683974A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain an MIS element having a fine pattern by a method wheren when respective regions of a surce, drain and diffusion wiring are formed on a semiconductor substrate, a polycrystal Si film containing impurity is provided and the impurity within it is diffused. CONSTITUTION:An SiO2 is attached on the surface of a P type Si substrate 1, resist film 6 is formed through an Si3N4 film 3 on an active region 4 and diffusion wiring region 5 alone intended to be formed, and B<+>-ions are injected to effect forming a P<-> type inversion preventive region 7 in the substrate 1 between those regions. Then, the films 6, 3 are removed and the heat treatment gives birth to a thick field SiO2 film 8 on the region 7 to accumulate the N type polycrystal Si film 9 on the whole surface including the film 8. After that, resist films 11 and 12 having openings are formed on the region 4 and the film 8 and the region 4 is perforated with a groove 13 by etching. Subsequently, a gate SiO2 film 14 and an SiO2 film 15 continued thereto are formed in the groove 13, the application of heat treatment at this time causes the impurity in the film 9 to be diffused and the respective regions 16, 17, 18 of the N<+> type source, drain and diffusion wiring to be produced.
JP16125379A 1979-12-12 1979-12-12 Semiconductor device and manufacture Pending JPS5683974A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16125379A JPS5683974A (en) 1979-12-12 1979-12-12 Semiconductor device and manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16125379A JPS5683974A (en) 1979-12-12 1979-12-12 Semiconductor device and manufacture

Publications (1)

Publication Number Publication Date
JPS5683974A true JPS5683974A (en) 1981-07-08

Family

ID=15731566

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16125379A Pending JPS5683974A (en) 1979-12-12 1979-12-12 Semiconductor device and manufacture

Country Status (1)

Country Link
JP (1) JPS5683974A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166763A (en) * 1988-07-20 1992-11-24 Mitsubishi Denki Kabushiki Kaisha Static type semiconductor memory device and method of manufacturing thereof
US5200918A (en) * 1988-07-20 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory with polysilicon source drain transistors

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131882A (en) * 1978-04-03 1979-10-13 Nec Corp Semiconductor device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54131882A (en) * 1978-04-03 1979-10-13 Nec Corp Semiconductor device and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5166763A (en) * 1988-07-20 1992-11-24 Mitsubishi Denki Kabushiki Kaisha Static type semiconductor memory device and method of manufacturing thereof
US5200918A (en) * 1988-07-20 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Static semiconductor memory with polysilicon source drain transistors

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