JPS5683975A - Semiconductor device and manufacture - Google Patents
Semiconductor device and manufactureInfo
- Publication number
- JPS5683975A JPS5683975A JP16125479A JP16125479A JPS5683975A JP S5683975 A JPS5683975 A JP S5683975A JP 16125479 A JP16125479 A JP 16125479A JP 16125479 A JP16125479 A JP 16125479A JP S5683975 A JPS5683975 A JP S5683975A
- Authority
- JP
- Japan
- Prior art keywords
- film
- region
- type
- regions
- sio2 film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 238000009792 diffusion process Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003449 preventive effect Effects 0.000 abstract 1
Classifications
-
- H01L29/78—
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To obtain an element in a fine pattern by a method wherein a source, drain and wiring are formed by the diffusion from a polycrystal Si containing impurity, when those are formed on a semiconductor substrate. CONSTITUTION:An SiO2 film 2 is attached on a P type Si substrate 1, a resist film 6 is mounted corresponded to the element 4 and a diffusion wiring formed region 5, and a P<-> type inversion preventive region 7 is formed in the substrate 1 between the element 4 and the region 5 by the ion injection. Then, a heat treatment is applied thereto to cause a thick field SiO2 film 8 to be grown on the region 7, the N type polycrystal Si film 9 to be accumulated on the whole surface, resist films 11 and 12 having openings being provided, and an etching is applied to form a groove 13 in the region 4. After then, an SiO2 film 15 and a gate SiO2 film 4 integrated therewith are cover-attached to the groove while those being extended over the film 8, and ions are driven into with gate electrodes 19 mounted on the films 15, 14 as the masks to form a shallow N<+> type source and drain regions 20, 21 and in addition, a siring layer 18. Subsequently, the heat treatment is applied to diffuse the impurity contained in the film 9 and to give rise to deep N<+> type regions 16, 17 continued to regions 20 and 21.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125479A JPS5683975A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16125479A JPS5683975A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5683975A true JPS5683975A (en) | 1981-07-08 |
| JPH0217942B2 JPH0217942B2 (en) | 1990-04-24 |
Family
ID=15731587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16125479A Granted JPS5683975A (en) | 1979-12-12 | 1979-12-12 | Semiconductor device and manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5683975A (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5455388A (en) * | 1977-10-12 | 1979-05-02 | Matsushita Electric Ind Co Ltd | Production of mos type semiconductor device |
| JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
-
1979
- 1979-12-12 JP JP16125479A patent/JPS5683975A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5455388A (en) * | 1977-10-12 | 1979-05-02 | Matsushita Electric Ind Co Ltd | Production of mos type semiconductor device |
| JPS54131882A (en) * | 1978-04-03 | 1979-10-13 | Nec Corp | Semiconductor device and its manufacture |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0217942B2 (en) | 1990-04-24 |
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