JPS55102253A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS55102253A JPS55102253A JP895379A JP895379A JPS55102253A JP S55102253 A JPS55102253 A JP S55102253A JP 895379 A JP895379 A JP 895379A JP 895379 A JP895379 A JP 895379A JP S55102253 A JPS55102253 A JP S55102253A
- Authority
- JP
- Japan
- Prior art keywords
- film
- sio
- regions
- polycrystal
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To make the surface flat and to prevent the breakdown of wiring by using polycrystal Si containing impurities as a diffusing source when an element region is formed in a semiconductor substrate, and leaving an SiO2 film obtained by heat- treating the polycrystal on the surface outside the region.
CONSTITUTION: An SiO2 film 202 is deposited on an Si substrate 201, and an element-forming region is covered by an Si3N4 film 203. A field SiO2 film 204 is formed on the peripheral portion by heat-treating. Then, the films 203 and 202 are removed, a gate SiO2 film 215 is deposited on the removed portion, and openings 205a and 205b are provided. A polycrystal Si layer 206 containing impurities is stuck all over the surface. Then, Si3N4-film masks 208a to 208d are provided on the specified areas, the exposed layer 206 is transformed into an SiO2 film 209 by heat- treating, and deep source and drain regions 210a and 210b are formed by diffusing impurities from the inside of the layer 106. Furthermore, shallow regions 211a and 211bare formed on both sides of the regions 210aand 210b, and Al wirings 213a and 213b are attached to the said regions.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP895379A JPS55102253A (en) | 1979-01-29 | 1979-01-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP895379A JPS55102253A (en) | 1979-01-29 | 1979-01-29 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55102253A true JPS55102253A (en) | 1980-08-05 |
Family
ID=11707028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP895379A Pending JPS55102253A (en) | 1979-01-29 | 1979-01-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55102253A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4800172A (en) * | 1987-02-09 | 1989-01-24 | Kabushiki Kaisha Toshiba | Manufacturing method for cascaded junction field effect transistor |
-
1979
- 1979-01-29 JP JP895379A patent/JPS55102253A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4800172A (en) * | 1987-02-09 | 1989-01-24 | Kabushiki Kaisha Toshiba | Manufacturing method for cascaded junction field effect transistor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5681974A (en) | Manufacture of mos type semiconductor device | |
JPS5766674A (en) | Semiconductor device | |
JPS5444481A (en) | Mos type semiconductor device and its manufacture | |
JPS55102253A (en) | Manufacture of semiconductor device | |
JPS5583267A (en) | Method of fabricating semiconductor device | |
JPS52141580A (en) | Manufacture of mos-type semiconductor device | |
JPS53144686A (en) | Production of semiconductor device | |
JPS55105332A (en) | Manufacture of semiconductor device | |
JPS5735368A (en) | Manufacture of semiconductor device | |
JPS57207374A (en) | Manufacture of semiconductor device | |
JPS5363986A (en) | Production of semiconductor device | |
JPS55102252A (en) | Manufacture of semiconductor device | |
JPS54116185A (en) | Manufacture for semiconductor device | |
JPS54155784A (en) | Manufacture of semiconductor integrated-circuit device | |
JPS53144687A (en) | Production of semiconductor device | |
JPS5683975A (en) | Semiconductor device and manufacture | |
JPS5656675A (en) | Semiconductor device on insulated substrate | |
JPS54133088A (en) | Semiconductor device | |
JPS5683976A (en) | Semiconductor device and manufacture | |
JPS5595365A (en) | Manufacture of semiconductor device | |
JPS5679446A (en) | Production of semiconductor device | |
JPS57206071A (en) | Semiconductor device and manufacture thereof | |
JPS5483784A (en) | Manufacture of semiconductor device | |
JPS5791537A (en) | Manufacture of semiconductor device | |
JPS5446468A (en) | Manufacture of inverted-trapezoid structure |