JPS55158680A - Solar cell and manufacture thereof - Google Patents

Solar cell and manufacture thereof

Info

Publication number
JPS55158680A
JPS55158680A JP6646479A JP6646479A JPS55158680A JP S55158680 A JPS55158680 A JP S55158680A JP 6646479 A JP6646479 A JP 6646479A JP 6646479 A JP6646479 A JP 6646479A JP S55158680 A JPS55158680 A JP S55158680A
Authority
JP
Japan
Prior art keywords
junction
substrate
layer
grid
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6646479A
Other languages
Japanese (ja)
Other versions
JPS5951756B2 (en
Inventor
Takeshi Konuma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP54066464A priority Critical patent/JPS5951756B2/en
Publication of JPS55158680A publication Critical patent/JPS55158680A/en
Publication of JPS5951756B2 publication Critical patent/JPS5951756B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To enhance the efficiency against light of short wave length by forming a deep junction in a grid pattern of the solar cell, and a shallow junction in the portion surrounded by the grid. CONSTITUTION:A solution which is prepared by adding a P compound into an Si- compound solution of 6% is printed on a p-type Si substrate 1 in a grid pattern and cured. Then, a film 3 is covered by applying said solution by rotating the substrate and cured. Therafter, it is heated at about 1,050 deg.C, a diffusion layer 4 is formed from said applied layer 2, and a diffusion layer 5 is formed from said applied layer 3. Electrodes are provided on the substrate 1 and the n-type diffusion layer 4, and the work is completed. The junction depth can be varied by varying the amount of impulities in the applied films 2 and 3 and extremely varying the thickness of the applied films. In this constitution, the efficiency against the light of short wave length can be enhanced at the shallow junction, and the electrodes are provided at the deep junction. Therefore, the junctions are not damaged, the rate at which the grid shields the incident light is decreased, and the increase in the resistance of the semiconductor layer can be reduced.
JP54066464A 1979-05-29 1979-05-29 How to manufacture solar cells Expired JPS5951756B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54066464A JPS5951756B2 (en) 1979-05-29 1979-05-29 How to manufacture solar cells

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54066464A JPS5951756B2 (en) 1979-05-29 1979-05-29 How to manufacture solar cells

Publications (2)

Publication Number Publication Date
JPS55158680A true JPS55158680A (en) 1980-12-10
JPS5951756B2 JPS5951756B2 (en) 1984-12-15

Family

ID=13316519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54066464A Expired JPS5951756B2 (en) 1979-05-29 1979-05-29 How to manufacture solar cells

Country Status (1)

Country Link
JP (1) JPS5951756B2 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215864A (en) * 1985-07-15 1987-01-24 Hitachi Ltd Manufacture of solar cell
JPS63148685A (en) * 1986-12-11 1988-06-21 Sharp Corp Manufacture of solar cell element
JP2006156646A (en) * 2004-11-29 2006-06-15 Sharp Corp Solar cell manufacturing method
KR100877821B1 (en) 2006-05-01 2009-01-12 엘지전자 주식회사 Process for Preparation of Selective Emitter in Silicon Solar Cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6215864A (en) * 1985-07-15 1987-01-24 Hitachi Ltd Manufacture of solar cell
JPS63148685A (en) * 1986-12-11 1988-06-21 Sharp Corp Manufacture of solar cell element
JPH0565066B2 (en) * 1986-12-11 1993-09-16 Sharp Kk
JP2006156646A (en) * 2004-11-29 2006-06-15 Sharp Corp Solar cell manufacturing method
KR100877821B1 (en) 2006-05-01 2009-01-12 엘지전자 주식회사 Process for Preparation of Selective Emitter in Silicon Solar Cell

Also Published As

Publication number Publication date
JPS5951756B2 (en) 1984-12-15

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