JPS5723279A - Manufacture of pv type infrared ray detector - Google Patents

Manufacture of pv type infrared ray detector

Info

Publication number
JPS5723279A
JPS5723279A JP9805280A JP9805280A JPS5723279A JP S5723279 A JPS5723279 A JP S5723279A JP 9805280 A JP9805280 A JP 9805280A JP 9805280 A JP9805280 A JP 9805280A JP S5723279 A JPS5723279 A JP S5723279A
Authority
JP
Japan
Prior art keywords
substrate
window
region
whole surface
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9805280A
Other languages
Japanese (ja)
Other versions
JPS6259470B2 (en
Inventor
Shigeki Hamashima
Hiroshi Takigawa
Mitsuo Yoshikawa
Michiharu Ito
Tomoshi Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9805280A priority Critical patent/JPS5723279A/en
Publication of JPS5723279A publication Critical patent/JPS5723279A/en
Publication of JPS6259470B2 publication Critical patent/JPS6259470B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1032—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIBVI compounds, e.g. HgCdTe IR photodiodes

Abstract

PURPOSE:To obtain a photovoltaic type infrared detector without any damage to a P-N junction, by a method wherein before forming impurities doped layer of reverse conductivity type on a substrate consisting of multiple semiconductors, a ZnS protective layer is formed in the region planned to form a doped layer, and impurity ions are injected therethrough. CONSTITUTION:An HgCdTe substrate 1 is preheated at about 150 deg.C to obtain good contactibility, a ZnS layer 2 is attached on the whole surface of the substrate 1, and a window H, is opened at the predetermined position. Then, while the substrate 1 is preheated, a ZnS film 3 is formed by CVD process on the whole surface of the substrate including the window H1, P-type impurity ions such as B are injected to form a P-type doped region 7 at the part of the substrate 1 corresponding to the window H1. The layer 3 is placed on the region 7 to form a window H2 and In is attached to the whole surface by evaporation. Next, patterning is carried out to from a lead wire 4 connecting with the region 7. While preheating the whole surface, the substrate is covered with a ZnS film 5, and other wires 6 are attached to both sides except for the light-receiving window W corresponding to the region 7.
JP9805280A 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector Granted JPS5723279A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9805280A JPS5723279A (en) 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9805280A JPS5723279A (en) 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector

Publications (2)

Publication Number Publication Date
JPS5723279A true JPS5723279A (en) 1982-02-06
JPS6259470B2 JPS6259470B2 (en) 1987-12-11

Family

ID=14209456

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9805280A Granted JPS5723279A (en) 1980-07-16 1980-07-16 Manufacture of pv type infrared ray detector

Country Status (1)

Country Link
JP (1) JPS5723279A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420445A (en) * 1993-02-22 1995-05-30 Texas Instruments Incorporated Aluminum-masked and radiantly-annealed group II-IV diffused region
US5681119A (en) * 1995-02-21 1997-10-28 Marui Co., Ltd. Ball bearing of a head component for a bicycle with an improved mounting structure

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0427865U (en) * 1990-07-02 1992-03-05

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5420445A (en) * 1993-02-22 1995-05-30 Texas Instruments Incorporated Aluminum-masked and radiantly-annealed group II-IV diffused region
US5681119A (en) * 1995-02-21 1997-10-28 Marui Co., Ltd. Ball bearing of a head component for a bicycle with an improved mounting structure

Also Published As

Publication number Publication date
JPS6259470B2 (en) 1987-12-11

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