JPS5724560A - Thyristor - Google Patents
ThyristorInfo
- Publication number
- JPS5724560A JPS5724560A JP9953380A JP9953380A JPS5724560A JP S5724560 A JPS5724560 A JP S5724560A JP 9953380 A JP9953380 A JP 9953380A JP 9953380 A JP9953380 A JP 9953380A JP S5724560 A JPS5724560 A JP S5724560A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- junction
- polycrystalline layer
- thyristor
- impurities
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012535 impurity Substances 0.000 abstract 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 230000001276 controlling effect Effects 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7408—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a capacitor or a resistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To obtain a thyristor for small current, having a trigger current designed freely, by a method wherein a semi-short-circuited condition is formed by covering the exposed surface of the P-N junction between a gate layer and a cathode layer of the thyristor with a polycrystalline layer including impurities. CONSTITUTION:Four semiconductor layers of P1-N1-P2-N2 are formed in a semicondutor piece 1. On the P2-N2 layer surfaces of the semiconductor piece 1, monosilane (SiH4) and a impurity source are introduced to deposit a polycrystalline layer including impurities at a temperature of less than 700 deg.C by using the CVD process. Only the P2-N2 junction surface of the polycrystalline layer is protected with wax or the like, and the remaining surface is dissolved and removed with a mixed acid including hydrofluoric acid and nitric acid to form another polycrystalline layer 2. Because the polycrystalline layer is formed at low-temperature, the impurities are not diffused, the intermediate connection between a diffused junction and a resistance junction is obtained, and the shunt component of the gate current is regulated by controlling the dimensions of the layer 2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9953380A JPS5724560A (en) | 1980-07-21 | 1980-07-21 | Thyristor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9953380A JPS5724560A (en) | 1980-07-21 | 1980-07-21 | Thyristor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5724560A true JPS5724560A (en) | 1982-02-09 |
Family
ID=14249845
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9953380A Pending JPS5724560A (en) | 1980-07-21 | 1980-07-21 | Thyristor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5724560A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593970A (en) * | 1982-06-29 | 1984-01-10 | Nec Corp | Semiconductor device |
-
1980
- 1980-07-21 JP JP9953380A patent/JPS5724560A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS593970A (en) * | 1982-06-29 | 1984-01-10 | Nec Corp | Semiconductor device |
| JPH0142506B2 (en) * | 1982-06-29 | 1989-09-13 | Nippon Electric Co |
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