JPS5568680A - High speed silicon semiconductor element - Google Patents

High speed silicon semiconductor element

Info

Publication number
JPS5568680A
JPS5568680A JP14182378A JP14182378A JPS5568680A JP S5568680 A JPS5568680 A JP S5568680A JP 14182378 A JP14182378 A JP 14182378A JP 14182378 A JP14182378 A JP 14182378A JP S5568680 A JPS5568680 A JP S5568680A
Authority
JP
Japan
Prior art keywords
junction
type layer
vicinity
opening
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14182378A
Other languages
Japanese (ja)
Inventor
Kazuhisa Wada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP14182378A priority Critical patent/JPS5568680A/en
Publication of JPS5568680A publication Critical patent/JPS5568680A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To shorten the reverse recovery time of a high speed silicon semiconductor element by irradiating neutron to the thick central portion of an n-type layer forming a pn-junction in its energizing direction to thereby create a higher trap density than the portion in the vicinity of the pn-junction and thus reducing the adverse effect of a life time killer thereto.
CONSTITUTION: An n-type layer 1 is grown on an n+-type silicon substrate, and a p-type impurity is diffused thereat to thereby create a pn-junction at the p-type layer formed thereby. Then a shield material 3 is arranged with an opening 2 of narrower than the thickness W of the layer 1 in the vicinity of the exposed surface of the pn-junction, and the opening 2 is faced oppositely to the central portion of the layer 1. Then, neutron beam 4 is irradiated through the opening 2 into the n-type layer 1 to thereby disorder the lattice in the n-type layer 1 in the vicinity of 0.6W from the pn-junction to thus generate a deep trap level. Then, low temperature treatment is conducted thereat at 700∼750°C to anneal it so as to thereby accelerate the stored carrier vanishing speed.
COPYRIGHT: (C)1980,JPO&Japio
JP14182378A 1978-11-17 1978-11-17 High speed silicon semiconductor element Pending JPS5568680A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14182378A JPS5568680A (en) 1978-11-17 1978-11-17 High speed silicon semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14182378A JPS5568680A (en) 1978-11-17 1978-11-17 High speed silicon semiconductor element

Publications (1)

Publication Number Publication Date
JPS5568680A true JPS5568680A (en) 1980-05-23

Family

ID=15300949

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14182378A Pending JPS5568680A (en) 1978-11-17 1978-11-17 High speed silicon semiconductor element

Country Status (1)

Country Link
JP (1) JPS5568680A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629558A (en) * 1992-07-08 1994-02-04 Naoshige Tamamushi Electrostatic induction diode having planar structure
JPH0637335A (en) * 1992-07-15 1994-02-10 Naoshige Tamamushi Static induction diode having buried structure or cut-in structure

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629558A (en) * 1992-07-08 1994-02-04 Naoshige Tamamushi Electrostatic induction diode having planar structure
JPH0637335A (en) * 1992-07-15 1994-02-10 Naoshige Tamamushi Static induction diode having buried structure or cut-in structure

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