JPS5568680A - High speed silicon semiconductor element - Google Patents
High speed silicon semiconductor elementInfo
- Publication number
- JPS5568680A JPS5568680A JP14182378A JP14182378A JPS5568680A JP S5568680 A JPS5568680 A JP S5568680A JP 14182378 A JP14182378 A JP 14182378A JP 14182378 A JP14182378 A JP 14182378A JP S5568680 A JPS5568680 A JP S5568680A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- type layer
- vicinity
- opening
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To shorten the reverse recovery time of a high speed silicon semiconductor element by irradiating neutron to the thick central portion of an n-type layer forming a pn-junction in its energizing direction to thereby create a higher trap density than the portion in the vicinity of the pn-junction and thus reducing the adverse effect of a life time killer thereto.
CONSTITUTION: An n-type layer 1 is grown on an n+-type silicon substrate, and a p-type impurity is diffused thereat to thereby create a pn-junction at the p-type layer formed thereby. Then a shield material 3 is arranged with an opening 2 of narrower than the thickness W of the layer 1 in the vicinity of the exposed surface of the pn-junction, and the opening 2 is faced oppositely to the central portion of the layer 1. Then, neutron beam 4 is irradiated through the opening 2 into the n-type layer 1 to thereby disorder the lattice in the n-type layer 1 in the vicinity of 0.6W from the pn-junction to thus generate a deep trap level. Then, low temperature treatment is conducted thereat at 700∼750°C to anneal it so as to thereby accelerate the stored carrier vanishing speed.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14182378A JPS5568680A (en) | 1978-11-17 | 1978-11-17 | High speed silicon semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP14182378A JPS5568680A (en) | 1978-11-17 | 1978-11-17 | High speed silicon semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5568680A true JPS5568680A (en) | 1980-05-23 |
Family
ID=15300949
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP14182378A Pending JPS5568680A (en) | 1978-11-17 | 1978-11-17 | High speed silicon semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5568680A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629558A (en) * | 1992-07-08 | 1994-02-04 | Naoshige Tamamushi | Electrostatic induction diode having planar structure |
JPH0637335A (en) * | 1992-07-15 | 1994-02-10 | Naoshige Tamamushi | Static induction diode having buried structure or cut-in structure |
-
1978
- 1978-11-17 JP JP14182378A patent/JPS5568680A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0629558A (en) * | 1992-07-08 | 1994-02-04 | Naoshige Tamamushi | Electrostatic induction diode having planar structure |
JPH0637335A (en) * | 1992-07-15 | 1994-02-10 | Naoshige Tamamushi | Static induction diode having buried structure or cut-in structure |
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