JPS55128823A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS55128823A JPS55128823A JP3548179A JP3548179A JPS55128823A JP S55128823 A JPS55128823 A JP S55128823A JP 3548179 A JP3548179 A JP 3548179A JP 3548179 A JP3548179 A JP 3548179A JP S55128823 A JPS55128823 A JP S55128823A
- Authority
- JP
- Japan
- Prior art keywords
- impurity
- diffused layer
- substrate
- concentration
- produced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Bipolar Transistors (AREA)
Abstract
PURPOSE: To attain a desired hFE value even in shallow emitter diffusion, by producing a high-concentration impurity diffused layer on the surface of a semiconductor substrate so that the layer extends flatly from the surface to the inside and the effective impurity concentration distribution is maximum.
CONSTITUTION: Impurity ions are injected into a semiconductor substrate to several different depths from the surface of the substrate so that an impurity diffused layer having an optimal concentration of 2×1018W2×1019 atoms per square centimeter and having a flat concentration distribution from the surface of the substrate to its deep part is produced. Annealing is then effected to change the diffused layer into another one shown by a full line. To provide an N+-type emitter region, P, As or the like is used as the impurity. In that case, a junction with a small depth of 0.2W 1.0μm is obtained, a very fine structure is produced and the performance of an LSI made of bipolar IC's is greatly improved.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3548179A JPS55128823A (en) | 1979-03-28 | 1979-03-28 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3548179A JPS55128823A (en) | 1979-03-28 | 1979-03-28 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128823A true JPS55128823A (en) | 1980-10-06 |
Family
ID=12442943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3548179A Pending JPS55128823A (en) | 1979-03-28 | 1979-03-28 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128823A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59920A (en) * | 1982-06-23 | 1984-01-06 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59108366A (en) * | 1982-12-14 | 1984-06-22 | Junichi Nishizawa | Manufacture of static induction transistor |
-
1979
- 1979-03-28 JP JP3548179A patent/JPS55128823A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59920A (en) * | 1982-06-23 | 1984-01-06 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS59108366A (en) * | 1982-12-14 | 1984-06-22 | Junichi Nishizawa | Manufacture of static induction transistor |
JPH0441513B2 (en) * | 1982-12-14 | 1992-07-08 | Junichi Nishizawa |
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