JPS55128823A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS55128823A
JPS55128823A JP3548179A JP3548179A JPS55128823A JP S55128823 A JPS55128823 A JP S55128823A JP 3548179 A JP3548179 A JP 3548179A JP 3548179 A JP3548179 A JP 3548179A JP S55128823 A JPS55128823 A JP S55128823A
Authority
JP
Japan
Prior art keywords
impurity
diffused layer
substrate
concentration
produced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3548179A
Other languages
Japanese (ja)
Inventor
Akio Anzai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP3548179A priority Critical patent/JPS55128823A/en
Publication of JPS55128823A publication Critical patent/JPS55128823A/en
Pending legal-status Critical Current

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  • Bipolar Transistors (AREA)

Abstract

PURPOSE: To attain a desired hFE value even in shallow emitter diffusion, by producing a high-concentration impurity diffused layer on the surface of a semiconductor substrate so that the layer extends flatly from the surface to the inside and the effective impurity concentration distribution is maximum.
CONSTITUTION: Impurity ions are injected into a semiconductor substrate to several different depths from the surface of the substrate so that an impurity diffused layer having an optimal concentration of 2×1018W2×1019 atoms per square centimeter and having a flat concentration distribution from the surface of the substrate to its deep part is produced. Annealing is then effected to change the diffused layer into another one shown by a full line. To provide an N+-type emitter region, P, As or the like is used as the impurity. In that case, a junction with a small depth of 0.2W 1.0μm is obtained, a very fine structure is produced and the performance of an LSI made of bipolar IC's is greatly improved.
COPYRIGHT: (C)1980,JPO&Japio
JP3548179A 1979-03-28 1979-03-28 Semiconductor device and manufacture thereof Pending JPS55128823A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3548179A JPS55128823A (en) 1979-03-28 1979-03-28 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3548179A JPS55128823A (en) 1979-03-28 1979-03-28 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS55128823A true JPS55128823A (en) 1980-10-06

Family

ID=12442943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3548179A Pending JPS55128823A (en) 1979-03-28 1979-03-28 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS55128823A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59920A (en) * 1982-06-23 1984-01-06 Fujitsu Ltd Manufacture of semiconductor device
JPS59108366A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Manufacture of static induction transistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59920A (en) * 1982-06-23 1984-01-06 Fujitsu Ltd Manufacture of semiconductor device
JPS59108366A (en) * 1982-12-14 1984-06-22 Junichi Nishizawa Manufacture of static induction transistor
JPH0441513B2 (en) * 1982-12-14 1992-07-08 Junichi Nishizawa

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