JPH0565066B2 - - Google Patents
Info
- Publication number
- JPH0565066B2 JPH0565066B2 JP61296435A JP29643586A JPH0565066B2 JP H0565066 B2 JPH0565066 B2 JP H0565066B2 JP 61296435 A JP61296435 A JP 61296435A JP 29643586 A JP29643586 A JP 29643586A JP H0565066 B2 JPH0565066 B2 JP H0565066B2
- Authority
- JP
- Japan
- Prior art keywords
- sheet resistance
- filter
- silicon substrate
- section
- diffusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 17
- 238000009792 diffusion process Methods 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 17
- 238000010438 heat treatment Methods 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 238000011282 treatment Methods 0.000 claims description 4
- 239000010453 quartz Substances 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、炉体内にフイルタを有するランプ加
熱装置を用いた太陽電池素子の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a method of manufacturing a solar cell element using a lamp heating device having a filter in the furnace body.
（従来の技術）
太陽電池素子を製造するための従来の拡散処理
は、シリコン基板に部分的なシート抵抗の面内変
化を有する接合構造を形成するために、酸化膜形
成及びフオトプロセス技術等を用い、さらに複数
回の拡散処理を行わなければならなかつた。(Prior art) Conventional diffusion processing for manufacturing solar cell elements involves the use of oxide film formation, photo process technology, etc. in order to form a bonding structure with a partial in-plane change in sheet resistance on a silicon substrate. In addition, it was necessary to carry out multiple diffusion treatments.
（発明が解決しようとする問題点）
このため、太陽電池素子の製造が非常に複雑
で、所要時間も長時間を要するといつた問題があ
つた。(Problems to be Solved by the Invention) Therefore, there were problems in that the production of solar cell elements was very complicated and required a long time.
（問題点を解決するための手段）
本発明に係る太陽電池素子の製造方法は、位置
によつて光透過量の異なるフイルタを炉体内に有
するランプ加熱装置を用い、このランプ加熱装置
の前記炉体内に、拡散塗布膜を形成したシリコン
基板を配置し、前記フイルタを介するランプ加熱
によつて前記シリコン基板に熱拡散処理を施すこ
とにより、前記フイルタの光透過量の変化に応じ
て前記拡散層にシート抵抗の面内変化を持たせ、
電極を形成する部分を低シート抵抗、受光部分を
高シート抵抗とする接合構造を形成するものであ
る。(Means for Solving the Problems) A method for manufacturing a solar cell element according to the present invention uses a lamp heating device having a filter having a different amount of light transmission depending on the position in the furnace body. A silicon substrate on which a diffusion coating film is formed is placed inside the body, and the silicon substrate is subjected to thermal diffusion treatment by lamp heating through the filter, so that the diffusion layer changes depending on the change in the amount of light transmitted through the filter. with an in-plane change in sheet resistance,
A bonding structure is formed in which the electrode forming part has a low sheet resistance and the light receiving part has a high sheet resistance.
（作用）
位置によつて光透過量の異なるフイルタを介し
てシリコン基板をランプ加熱し、シリコン基板に
熱拡散処理を施すことにより、拡散層に、フイル
タの光透過量の変化に応じたシート抵抗の面内変
化を持たせる。つまり、電極を形成する部分を低
シート抵抗、受光部分を高シート抵抗とする接合
構造を形成する。(Function) By heating the silicon substrate with a lamp through a filter that transmits light that varies depending on its position, and applying heat diffusion treatment to the silicon substrate, the sheet resistance changes in the diffusion layer according to the change in the amount of light that the filter transmits. have an in-plane change. In other words, a bonding structure is formed in which the electrode forming part has a low sheet resistance and the light receiving part has a high sheet resistance.
このように、本発明の製造方法によれば、位置
によつて光透過量の異なるフイルタを用いること
により、このフイルタを介して拡散塗布膜の形成
面全体をランプ加熱するだけで、その加熱の度合
いを位置により変化させることが可能となる。つ
まり、低いシート抵抗部分と高いシート抵抗部分
とが一度のランプ加熱により形成されることにな
る。 As described above, according to the manufacturing method of the present invention, by using a filter that transmits light that varies depending on the position, the entire surface on which the diffusion coating film is formed can be heated with a lamp through the filter. It becomes possible to change the degree depending on the position. In other words, a low sheet resistance portion and a high sheet resistance portion are formed by one lamp heating.
（実施例）
以下、本発明の一実施例を図面を参照して説明
する。(Example) Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図は、本発明の製造方法に用いられるラン
プ加熱装置の概略構成を示している。 FIG. 1 shows a schematic configuration of a lamp heating device used in the manufacturing method of the present invention.
同図において、１は炉本体、２は炉本体１内に
配置された石英チユーブである。この石英チユー
ブ２の外側には、その上部位置と下部位置とにそ
れぞれ複数個のランプ３，３…が配置されてい
る。一方、石英チユーブ２の内部の略中央位置に
石英トレー４が水平に配置され、この石英トレー
４の上に点接触の状態で、上面にリンガラス
（PSG）塗布膜１０（第２図参照）を有するシリ
コン基板５が載置されている。そして、このシリ
コン基板５に近接する上部位置、及び石英トレー
４に近接する下部位置であつて前記シリコン基板
５と対向する位置に、それぞれフイルタ６ａ，６
ｂが交換可能な構造として配置されている。さら
に、シリコン基板５の下部であつて、炉本体１の
底壁から該炉本体と石英チユーブ２との隙間内に
貫入する形でパイロメータ７が設置されている。
このパイロメータ７は、シリコン基板５の温度測
定を非接触で行うためのものである。 In the figure, 1 is a furnace main body, and 2 is a quartz tube arranged inside the furnace main body 1. A plurality of lamps 3, 3, . . . are arranged on the outside of the quartz tube 2 at its upper and lower positions, respectively. On the other hand, a quartz tray 4 is horizontally arranged approximately at the center inside the quartz tube 2, and a phosphor glass (PSG) coating film 10 (see FIG. 2) is placed on the upper surface of the quartz tray 4 in point contact with the quartz tray 4. A silicon substrate 5 having a shape is placed thereon. Filters 6a and 6 are placed at an upper position close to the silicon substrate 5 and at a lower position close to the quartz tray 4 and facing the silicon substrate 5, respectively.
b is arranged as an exchangeable structure. Further, a pyrometer 7 is installed below the silicon substrate 5 so as to penetrate from the bottom wall of the furnace body 1 into the gap between the furnace body and the quartz tube 2 .
This pyrometer 7 is for measuring the temperature of the silicon substrate 5 in a non-contact manner.
また、前記フイルタ６ａ，６ｂは、第２図に示
すように、例えばＡ部が90％以上の光を透過する
ように形成されるとともに、Ｂ部には吸収膜が設
けられてＡ部より光透過量を減じるように形成さ
れている。 Further, as shown in FIG. 2, the filters 6a and 6b are formed such that, for example, the A section transmits 90% or more of the light, and the B section is provided with an absorbing film to allow light to pass through the A section. It is formed to reduce the amount of transmission.
このようなランプ加熱装置を用い、前記シリコ
ン基板５に対して、加熱温度：900〜1100℃、加
熱時間：数十秒〜数秒、の処理条件でランプ加熱
を行う。これにより、第３図に示すように、シリ
コン基板５の上面に低シート抵抗部１２及び高シ
ート抵抗部１３を形成することができる。つま
り、第２図に示すフイルタ６ａ，６ｂを用いるこ
とにより、このフイルタ６ａ，６ｂを介して拡散
塗布膜の形成面全体をランプ加熱するだけで、低
シート抵抗部１２と高シート抵抗部１３とが同時
に形成できるものである。このようにして形成さ
れた低シート抵抗部１２は10〜40Ω／□程度のシ
ート抵抗値で、第４図に示すように、表電極１４
の直下の位置に相当し、曲線因子を高める効果を
有する。一方、高シート抵抗部１３は50〜
150Ω／□程度のシート抵抗値で、反射防止膜１
５を有する受光面部分に相当し、浅い接合形成に
よる短絡電流の増加が期待できる。なお、第４図
に示す太陽電池素子において、１６はP+層、１
７は裏電極である。 Using such a lamp heating device, lamp heating is performed on the silicon substrate 5 under processing conditions such as a heating temperature of 900 to 1100° C. and a heating time of several tens of seconds to several seconds. Thereby, as shown in FIG. 3, a low sheet resistance section 12 and a high sheet resistance section 13 can be formed on the upper surface of the silicon substrate 5. That is, by using the filters 6a and 6b shown in FIG. 2, the low sheet resistance portion 12 and the high sheet resistance portion 13 can be separated by simply heating the entire surface on which the diffusion coating film is formed via the filters 6a and 6b. can be formed simultaneously. The low sheet resistance portion 12 formed in this way has a sheet resistance value of about 10 to 40Ω/□, and as shown in FIG.
It corresponds to the position directly below , and has the effect of increasing the fill factor. On the other hand, the high sheet resistance part 13 is 50~
Anti-reflection coating 1 with a sheet resistance value of about 150Ω/□
5, and an increase in short circuit current can be expected due to the formation of a shallow junction. In addition, in the solar cell element shown in FIG. 4, 16 is a P + layer, 1
7 is a back electrode.
このように、本発明の製造方法により作製した
太陽電池素子は、従来技術である抵抗加熱を用い
たPOCl3による気相拡散もしくはドープドオキサ
イド膜による固相拡散により作製された太陽電池
素子（40〜50Ω／□程度の低い均一なシート抵抗
値を持つ）の特性に比べて、前記したように曲線
因子及び短絡電流の増加が期待でき、その結果と
して素子効率の向上を図ることができる。 As described above, the solar cell element manufactured by the manufacturing method of the present invention is similar to the solar cell element manufactured by the conventional technology of vapor phase diffusion using POCl 3 using resistance heating or solid phase diffusion using a doped oxide film (40 As described above, an increase in fill factor and short-circuit current can be expected as compared to the characteristics of a material having a low uniform sheet resistance value of about 50 Ω/□, and as a result, an improvement in device efficiency can be achieved.
なお、本発明の製造方法によつて作製された太
陽電池素子の特性をさらに向上させるためには、
第５図に示すような数段階の吸収膜パターンを有
するフイルタ２０を用いればよい。同図におい
て、Ｃ部が光透過量90％の部分、Ｄ部が85％の部
分、Ｅ部が80％の部分、Ｆ部が75％の部分、Ｇ部
が70％の部分である。 In addition, in order to further improve the characteristics of the solar cell element produced by the production method of the present invention,
A filter 20 having an absorption film pattern of several stages as shown in FIG. 5 may be used. In the figure, section C is a section with a light transmission amount of 90%, section D is a section with 85%, section E is a section with 80%, section F is a section with 75%, and section G is a section with 70%.
（発明の効果）
本発明の太陽電池素子の製造方法によれば、位
置によつて光透過量の異なるフイルタを用いるこ
とにより、このフイルタを介して拡散塗布膜の形
成面全体をランプ加熱するだけで、部分的にシー
ト抵抗の面内変化を持たせることができる。ま
た、拡散プロセスのみで部分的にシート抵抗の面
内変化を持たせることができるので、従来の製造
方法に比べて処理工程を簡略化することができ
る。さらに、電極を形成する部分を低シート抵
抗、受光部分を高シート抵抗とすることにより、
曲線因子及び短絡電流の増加が期待でき、これに
より素子効率を向上することができる。(Effects of the Invention) According to the method for manufacturing a solar cell element of the present invention, by using a filter that transmits light that varies depending on the position, the entire surface on which the diffusion coating film is formed is simply heated with a lamp through this filter. This allows for partial in-plane changes in sheet resistance. Further, since it is possible to locally change the sheet resistance in the plane only by the diffusion process, the processing steps can be simplified compared to conventional manufacturing methods. Furthermore, by making the part that forms the electrode low sheet resistance and the light receiving part high sheet resistance,
An increase in fill factor and short-circuit current can be expected, thereby improving device efficiency.
第１図は本発明の製造方法に用いられるランプ
加熱装置の縦断面図、第２図はシリコン基板及び
フイルタの斜視図、第３図はシリコン基板の面内
変化の拡散状態を示す斜視図、第４図は太陽電池
素子の縦断面図、第５図はフイルタの他の実施例
を示す平面図である。
１……炉本体、２……石英チユーブ、３……ラ
ンプ、４……石英トレー、５……シリコン基板、
６ａ，６ｂ……フイルタ、７……パイロメータ、
１２……低シート抵抗部、１３……高シート抵抗
部。
FIG. 1 is a longitudinal sectional view of a lamp heating device used in the manufacturing method of the present invention, FIG. 2 is a perspective view of a silicon substrate and a filter, and FIG. 3 is a perspective view showing a diffusion state of in-plane changes in a silicon substrate. FIG. 4 is a longitudinal sectional view of the solar cell element, and FIG. 5 is a plan view showing another embodiment of the filter. 1... Furnace body, 2... Quartz tube, 3... Lamp, 4... Quartz tray, 5... Silicon substrate,
6a, 6b...filter, 7...pyrometer,
12...Low sheet resistance section, 13...High sheet resistance section.
Claims (1)
体内に有するランプ加熱装置を用い、このランプ
加熱装置の前記炉体内に、拡散塗布膜を形成した
シリコン基板を配置し、前記フイルタを介するラ
ンプ加熱によつて前記シリコン基板に熱拡散処理
を施すことにより、前記フイルタの光透過量の変
化に応じて前記拡散層にシート抵抗の面内変化を
持たせ、電極を形成する部分を低シート抵抗、受
光部分を高シート抵抗とする接合構造を形成する
ことを特徴とする太陽電池素子の製造方法。1. Using a lamp heating device that has a filter in its furnace body that transmits a different amount of light depending on its position, a silicon substrate on which a diffusion coating film is formed is arranged in the furnace body of this lamp heating device, and lamp heating is performed through the filter. By subjecting the silicon substrate to thermal diffusion treatment, the diffusion layer has an in-plane change in sheet resistance in accordance with the change in the amount of light transmitted through the filter, and the portion where the electrode is to be formed has a low sheet resistance. A method for manufacturing a solar cell element, comprising forming a bonding structure in which a light-receiving portion has a high sheet resistance.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61296435A JPS63148685A (en) | 1986-12-11 | 1986-12-11 | Manufacture of solar cell element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61296435A JPS63148685A (en) | 1986-12-11 | 1986-12-11 | Manufacture of solar cell element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63148685A JPS63148685A (en) | 1988-06-21 |
| JPH0565066B2 true JPH0565066B2 (en) | 1993-09-16 |
Family
ID=17833499
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61296435A Granted JPS63148685A (en) | 1986-12-11 | 1986-12-11 | Manufacture of solar cell element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63148685A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2502180B2 (en) * | 1990-10-01 | 1996-05-29 | 三菱電機株式会社 | Elevator hall device |
| KR100974221B1 (en) * | 2008-04-17 | 2010-08-06 | 엘지전자 주식회사 | Method for forming selective emitter of solar cell using laser annealing and Method for manufacturing solar cell using the same |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826662A (en) * | 1971-08-10 | 1973-04-07 | ||
| JPS55158680A (en) * | 1979-05-29 | 1980-12-10 | Matsushita Electric Ind Co Ltd | Solar cell and manufacture thereof |
| JPS5757482A (en) * | 1980-08-12 | 1982-04-06 | Nippon Electric Co | Heater |
| JPS60216561A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Heat-treating method |
| JPS60216541A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Introducing method of impurity to semiconductor substrate |
| JPS60216538A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Diffusing method of impurity to semiconductor substrate |
-
1986
- 1986-12-11 JP JP61296435A patent/JPS63148685A/en active Granted
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4826662A (en) * | 1971-08-10 | 1973-04-07 | ||
| JPS55158680A (en) * | 1979-05-29 | 1980-12-10 | Matsushita Electric Ind Co Ltd | Solar cell and manufacture thereof |
| JPS5757482A (en) * | 1980-08-12 | 1982-04-06 | Nippon Electric Co | Heater |
| JPS60216561A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Heat-treating method |
| JPS60216541A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Introducing method of impurity to semiconductor substrate |
| JPS60216538A (en) * | 1984-04-12 | 1985-10-30 | Fuji Electric Corp Res & Dev Ltd | Diffusing method of impurity to semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63148685A (en) | 1988-06-21 |
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