JPS55130182A - P-n hetero junction solar battery - Google Patents

P-n hetero junction solar battery

Info

Publication number
JPS55130182A
JPS55130182A JP3703779A JP3703779A JPS55130182A JP S55130182 A JPS55130182 A JP S55130182A JP 3703779 A JP3703779 A JP 3703779A JP 3703779 A JP3703779 A JP 3703779A JP S55130182 A JPS55130182 A JP S55130182A
Authority
JP
Japan
Prior art keywords
thin film
solar battery
junction solar
hetero junction
type silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3703779A
Other languages
Japanese (ja)
Other versions
JPS6140153B2 (en
Inventor
Sakuji Ikeda
Kiyoshi Takahashi
Hideki Shirakawa
Masao Kobayashi
Makoto Konagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Holdings Corp
Original Assignee
Showa Denko KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko KK filed Critical Showa Denko KK
Priority to JP3703779A priority Critical patent/JPS55130182A/en
Publication of JPS55130182A publication Critical patent/JPS55130182A/en
Publication of JPS6140153B2 publication Critical patent/JPS6140153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/30—Doping active layers, e.g. electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H10K85/143—Polyacetylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve energy conversion efficiency of a pn hetero junction solar battery by forming a polyacetylene thin film having less than 10mum on an n-type silicon surface by a polymerization and treating it with electron receptive compound. CONSTITUTION:A p-type conductive polyacetylene thin film 2(iodine is doped as an electron receptive compound at the polyacetylene thin film with a thickness of 0.8mum) is formed on an n-type silicon 3 having an ohmic electrode 4 on one side, and gold is further coated by a chemical evaporation process, and a transparent electrode 1 is formed thereon.
JP3703779A 1979-03-30 1979-03-30 P-n hetero junction solar battery Granted JPS55130182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3703779A JPS55130182A (en) 1979-03-30 1979-03-30 P-n hetero junction solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3703779A JPS55130182A (en) 1979-03-30 1979-03-30 P-n hetero junction solar battery

Publications (2)

Publication Number Publication Date
JPS55130182A true JPS55130182A (en) 1980-10-08
JPS6140153B2 JPS6140153B2 (en) 1986-09-08

Family

ID=12486411

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3703779A Granted JPS55130182A (en) 1979-03-30 1979-03-30 P-n hetero junction solar battery

Country Status (1)

Country Link
JP (1) JPS55130182A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164579A (en) * 1981-04-03 1982-10-09 Toray Ind Inc High performance polyacetylene semiconductor element
US4873556A (en) * 1985-05-07 1989-10-10 Mitsubishi Denki Kabushiki Kaisha Hetero-junction device
JP2006073856A (en) * 2004-09-03 2006-03-16 Konica Minolta Medical & Graphic Inc Photoelectric conversion element and radiation image detector
JP2011046565A (en) * 2009-08-27 2011-03-10 Sharp Corp Single crystal silicon ingot, single crystal silicon wafer, single crystal silicon solar cell, and method for manufacturing single crystal silicon ingot

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01288359A (en) * 1988-05-17 1989-11-20 Hanshin Kasei Kogyo Kk Water-soluble solid-receiving device and shower apparatus connecting the same

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57164579A (en) * 1981-04-03 1982-10-09 Toray Ind Inc High performance polyacetylene semiconductor element
JPS6352787B2 (en) * 1981-04-03 1988-10-20 Toray Industries
US4873556A (en) * 1985-05-07 1989-10-10 Mitsubishi Denki Kabushiki Kaisha Hetero-junction device
JP2006073856A (en) * 2004-09-03 2006-03-16 Konica Minolta Medical & Graphic Inc Photoelectric conversion element and radiation image detector
JP2011046565A (en) * 2009-08-27 2011-03-10 Sharp Corp Single crystal silicon ingot, single crystal silicon wafer, single crystal silicon solar cell, and method for manufacturing single crystal silicon ingot

Also Published As

Publication number Publication date
JPS6140153B2 (en) 1986-09-08

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