JPS54118781A - Planar-type diode - Google Patents

Planar-type diode

Info

Publication number
JPS54118781A
JPS54118781A JP2699978A JP2699978A JPS54118781A JP S54118781 A JPS54118781 A JP S54118781A JP 2699978 A JP2699978 A JP 2699978A JP 2699978 A JP2699978 A JP 2699978A JP S54118781 A JPS54118781 A JP S54118781A
Authority
JP
Japan
Prior art keywords
region
layer
substrate
diffusion
ohmic electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2699978A
Other languages
Japanese (ja)
Inventor
Saburo Takamiya
Masaaki Nakatani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP2699978A priority Critical patent/JPS54118781A/en
Publication of JPS54118781A publication Critical patent/JPS54118781A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To improve the characteristics of the yielding voltage or the like and at the same time to simplify the manufacturing process of the diode by forming the opposite conducting region on the semiconductor substrate through diffusion with the ohmic electrode provided on the region and then forming the Schottky junction floating on both ends of the depletion layer which is expanded by the diffusion region. CONSTITUTION:P-type region 3 is formed by diffusion on N-type semiconductor substrate 1 with ohmic electrode 4 attached there. At the same time, ohmic electrode 5 is attached to the back of substrate 1. Then Schottky metal layer 8 is coated within the region of depletion layer 2 expanding by region 3 as if it enclosed region 3 and with a fixed distance from region 3. As a result, layer 8 is floating on substrate 1 to cause Schottky junction 9 between layer 8 and substrate 1. Thus, the occurrence of the voltage yield is reduced at the circumference of the junction. Furthermore, layer 8 can be formed sumultaneously with electrode 4, thus simplifying greatly the manufacturing process.
JP2699978A 1978-03-08 1978-03-08 Planar-type diode Pending JPS54118781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2699978A JPS54118781A (en) 1978-03-08 1978-03-08 Planar-type diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2699978A JPS54118781A (en) 1978-03-08 1978-03-08 Planar-type diode

Publications (1)

Publication Number Publication Date
JPS54118781A true JPS54118781A (en) 1979-09-14

Family

ID=12208838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2699978A Pending JPS54118781A (en) 1978-03-08 1978-03-08 Planar-type diode

Country Status (1)

Country Link
JP (1) JPS54118781A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074582A (en) * 1983-08-08 1985-04-26 ゼネラル・エレクトリツク・カンパニイ Pinch rectifier
US4980749A (en) * 1988-03-31 1990-12-25 Sanken Electric Co., Ltd. P-N junction semiconductor device and method of fabrication
JP2006287264A (en) * 2006-07-24 2006-10-19 Nissan Motor Co Ltd Silicon-carbide semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6074582A (en) * 1983-08-08 1985-04-26 ゼネラル・エレクトリツク・カンパニイ Pinch rectifier
JPH0370907B2 (en) * 1983-08-08 1991-11-11 Gen Electric
US4980749A (en) * 1988-03-31 1990-12-25 Sanken Electric Co., Ltd. P-N junction semiconductor device and method of fabrication
JP2006287264A (en) * 2006-07-24 2006-10-19 Nissan Motor Co Ltd Silicon-carbide semiconductor device
JP4586775B2 (en) * 2006-07-24 2010-11-24 日産自動車株式会社 Silicon carbide semiconductor device

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