JPS5487482A - Schottky barrier diode - Google Patents

Schottky barrier diode

Info

Publication number
JPS5487482A
JPS5487482A JP15581177A JP15581177A JPS5487482A JP S5487482 A JPS5487482 A JP S5487482A JP 15581177 A JP15581177 A JP 15581177A JP 15581177 A JP15581177 A JP 15581177A JP S5487482 A JPS5487482 A JP S5487482A
Authority
JP
Japan
Prior art keywords
metal
reversely
silicon layer
circumferential edge
reverse current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15581177A
Other languages
Japanese (ja)
Inventor
Kimii Sumino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP15581177A priority Critical patent/JPS5487482A/en
Publication of JPS5487482A publication Critical patent/JPS5487482A/en
Pending legal-status Critical Current

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  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To reduce reverse current leakage by providing a reversely-conductive type high-resistance part to the contact part to the external circumference of Schottky metal of a semiconductor.
CONSTITUTION: At the contact surface side with metal 2 of silicon layer 1, P-type impurities, which are reversely conductive to n-type silicon layer 1, are doped thin from the part a trifle inside of the external circumference of metal 2 over the circumferential edge, thereby forming high-resistance part 11. Consequently, the reverse current leakage at the circumferential edge can be reduced remarkably without nearly changing other characteristics.
COPYRIGHT: (C)1979,JPO&Japio
JP15581177A 1977-12-24 1977-12-24 Schottky barrier diode Pending JPS5487482A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15581177A JPS5487482A (en) 1977-12-24 1977-12-24 Schottky barrier diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15581177A JPS5487482A (en) 1977-12-24 1977-12-24 Schottky barrier diode

Publications (1)

Publication Number Publication Date
JPS5487482A true JPS5487482A (en) 1979-07-11

Family

ID=15613975

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15581177A Pending JPS5487482A (en) 1977-12-24 1977-12-24 Schottky barrier diode

Country Status (1)

Country Link
JP (1) JPS5487482A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156372A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Schottky barrier diode
JPH01259558A (en) * 1988-04-09 1989-10-17 Sanken Electric Co Ltd Schottky barrier semiconductor device
JPH01266761A (en) * 1988-04-18 1989-10-24 Sanken Electric Co Ltd Manufacture of schottky barrier semiconductor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (en) * 1972-06-06 1974-02-13
JPS508312A (en) * 1973-05-28 1975-01-28

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4916231A (en) * 1972-06-06 1974-02-13
JPS508312A (en) * 1973-05-28 1975-01-28

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156372A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Schottky barrier diode
JPH01259558A (en) * 1988-04-09 1989-10-17 Sanken Electric Co Ltd Schottky barrier semiconductor device
JPH01266761A (en) * 1988-04-18 1989-10-24 Sanken Electric Co Ltd Manufacture of schottky barrier semiconductor device

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