JPS57159071A - Compound semiconductor device - Google Patents

Compound semiconductor device

Info

Publication number
JPS57159071A
JPS57159071A JP56043189A JP4318981A JPS57159071A JP S57159071 A JPS57159071 A JP S57159071A JP 56043189 A JP56043189 A JP 56043189A JP 4318981 A JP4318981 A JP 4318981A JP S57159071 A JPS57159071 A JP S57159071A
Authority
JP
Japan
Prior art keywords
active layer
light
gate
layer
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56043189A
Other languages
Japanese (ja)
Other versions
JPS6244827B2 (en
Inventor
Jitoku Okumura
Hirokuni Tokuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP56043189A priority Critical patent/JPS57159071A/en
Publication of JPS57159071A publication Critical patent/JPS57159071A/en
Publication of JPS6244827B2 publication Critical patent/JPS6244827B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/1127—Devices with PN heterojunction gate
    • H01L31/1129—Devices with PN heterojunction gate the device being a field-effect phototransistor

Abstract

PURPOSE:To obtain the light-receiving device with which a signal current can be precisely controlled by gate voltage for an arbitrary input quantity of light producing low noise for the subject semiconductor device by a method wherein the function of a light-receiving element is given to a dual gate junction type field-effect transistor. CONSTITUTION:An InGaAsP layer 11 is provided on a semiconductive InP substrate 10 as an active layer, and N<+> type InGaAsP regions 12 and 12', a source electrode 13 and a drain electrode 13', which will be ohmic contacted to the regions 12 and 12', are formed on the surface of the layer 11. P type InP layers 14 and 15, which will be turned into a gate region, are selectively formed in such a manner that a P-N junction will be formed with the active layer 11. And an aperture is provided to introduce an incident ray 18 without allowing the adherence of electrode metal on the whole surface. Accordingly, as the forbidden band width of the gate region 14 is larger than that of the active layer 11, the light of small energy can be selectively absorbed by the active layer, thereby enabling to reduce the leakage current of the gate.
JP56043189A 1981-03-26 1981-03-26 Compound semiconductor device Granted JPS57159071A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56043189A JPS57159071A (en) 1981-03-26 1981-03-26 Compound semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56043189A JPS57159071A (en) 1981-03-26 1981-03-26 Compound semiconductor device

Publications (2)

Publication Number Publication Date
JPS57159071A true JPS57159071A (en) 1982-10-01
JPS6244827B2 JPS6244827B2 (en) 1987-09-22

Family

ID=12656966

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56043189A Granted JPS57159071A (en) 1981-03-26 1981-03-26 Compound semiconductor device

Country Status (1)

Country Link
JP (1) JPS57159071A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2557729A1 (en) * 1983-12-28 1985-07-05 Olympus Optical Co SEMICONDUCTOR PHOTOELECTRIC CONVERTER DEVICE
JPS60233872A (en) * 1984-03-28 1985-11-20 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン Semiconductor device and method of producing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02295821A (en) * 1989-05-09 1990-12-06 Takashi Ichihara Dolly lifting and inclining and discharging device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2557729A1 (en) * 1983-12-28 1985-07-05 Olympus Optical Co SEMICONDUCTOR PHOTOELECTRIC CONVERTER DEVICE
JPS60233872A (en) * 1984-03-28 1985-11-20 インタ−ナシヨナル・スタンダ−ド・エレクトリツク・コ−ポレイシヨン Semiconductor device and method of producing same

Also Published As

Publication number Publication date
JPS6244827B2 (en) 1987-09-22

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