JPS5559757A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5559757A JPS5559757A JP13338578A JP13338578A JPS5559757A JP S5559757 A JPS5559757 A JP S5559757A JP 13338578 A JP13338578 A JP 13338578A JP 13338578 A JP13338578 A JP 13338578A JP S5559757 A JPS5559757 A JP S5559757A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- semiconductor substrate
- carriers
- region
- injection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0222—Charge pumping, substrate bias generation structures
Abstract
PURPOSE:To prevent adverse effects by a small number of carriers to other circuit portions on a semiconductor substrate, by inhibiting the injection of few carriers to the substrate by forming a region with high concentration to a junction region with the substrate of a substrate bias generating circuit. CONSTITUTION:A coefficient of injection of a small number of carriers is decreased by changing a semiconductor substrate portion 8 just nuder a region 4, in which junction with a substrate 1 of a substrate bias generating circuit is brought to a forward potential condition, into a P-type region with high concentration, the injection of few carriers to the semiconductor substrate 1 in the case when junction between the region 4 and the semiconductor substrate 1 is put to the forward potential condition is suppressed and the inflow of a small number of carriers to a memory element dynamically operating and a joint of high impedance is prevented. Regions 9, 10 in a conduction type opposite to the semiconductor substrate 1 are made up around transistors Q1, Q2 for the substrate bias generating circuit, and few carriers diffused into the semiconductor substrate 1 are absorbed by applying proper bias voltage to the regions 9, 10.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13338578A JPS5950224B2 (en) | 1978-10-30 | 1978-10-30 | semiconductor equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13338578A JPS5950224B2 (en) | 1978-10-30 | 1978-10-30 | semiconductor equipment |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5559757A true JPS5559757A (en) | 1980-05-06 |
JPS5950224B2 JPS5950224B2 (en) | 1984-12-07 |
Family
ID=15103490
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13338578A Expired JPS5950224B2 (en) | 1978-10-30 | 1978-10-30 | semiconductor equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5950224B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0062894A2 (en) * | 1981-04-07 | 1982-10-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
JPS57193054A (en) * | 1981-05-22 | 1982-11-27 | Fujitsu Ltd | Substrate bias generating circuit |
JPS6149457A (en) * | 1984-08-13 | 1986-03-11 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Charge pumping structure of substrate bias generatr |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6140834U (en) * | 1984-08-20 | 1986-03-15 | 株式会社 神崎高級工機製作所 | Reel mower device |
KR101292857B1 (en) | 2008-07-08 | 2013-08-07 | 닛본 세이고 가부시끼가이샤 | Resin retainer for tapered roller bearing, and tapered roller bearing |
-
1978
- 1978-10-30 JP JP13338578A patent/JPS5950224B2/en not_active Expired
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0062894A2 (en) * | 1981-04-07 | 1982-10-20 | Kabushiki Kaisha Toshiba | Semiconductor device |
US4559548A (en) * | 1981-04-07 | 1985-12-17 | Tokyo Shibaura Denki Kabushiki Kaisha | CMOS Charge pump free of parasitic injection |
JPS57193054A (en) * | 1981-05-22 | 1982-11-27 | Fujitsu Ltd | Substrate bias generating circuit |
JPH0423427B2 (en) * | 1981-05-22 | 1992-04-22 | Fujitsu Ltd | |
JPS6149457A (en) * | 1984-08-13 | 1986-03-11 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | Charge pumping structure of substrate bias generatr |
JPH0347587B2 (en) * | 1984-08-13 | 1991-07-19 | Intaanashonaru Bijinesu Mashiinzu Corp |
Also Published As
Publication number | Publication date |
---|---|
JPS5950224B2 (en) | 1984-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52102690A (en) | Semiconductor capacitance device | |
GB2029096B (en) | Semiconductor devices | |
JPS54132753A (en) | Referential voltage generator and its application | |
JPS5559757A (en) | Semiconductor device | |
JPS54101283A (en) | Gate protective device | |
JPS538572A (en) | Field effect type transistor | |
KR910020896A (en) | Semiconductor integrated circuit | |
JPS5548957A (en) | Semiconductor logic element | |
JPS5318390A (en) | Mos type field effect transistor circuit | |
JPS5538058A (en) | Semiconductor device | |
JPS5588372A (en) | Lateral type transistor | |
GB1021147A (en) | Divided base four-layer semiconductor device | |
JPS5232278A (en) | Semiconductor device | |
JPS5546555A (en) | Semiconductor device | |
JPS5482178A (en) | Electrostatic inductive intergrated circuit device | |
JPS57166067A (en) | Bias generating unit for substrate | |
JPS5513990A (en) | Semiconductor device | |
JPS5342565A (en) | Hetero junction transistor | |
JPS57159071A (en) | Compound semiconductor device | |
JPS5249780A (en) | Semiconductor integrated circuit | |
JPS5736854A (en) | Integrated circuit device | |
JPS54114085A (en) | Semiconductor device | |
JPS56116663A (en) | Transistor device | |
JPS5498581A (en) | Manufacture of field effect transistor | |
JPS5632763A (en) | Semiconductor device |