JPS5585055A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5585055A
JPS5585055A JP15944178A JP15944178A JPS5585055A JP S5585055 A JPS5585055 A JP S5585055A JP 15944178 A JP15944178 A JP 15944178A JP 15944178 A JP15944178 A JP 15944178A JP S5585055 A JPS5585055 A JP S5585055A
Authority
JP
Japan
Prior art keywords
type
diode
gate
island
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15944178A
Other languages
Japanese (ja)
Other versions
JPS6141153B2 (en
Inventor
Yoshito Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15944178A priority Critical patent/JPS5585055A/en
Publication of JPS5585055A publication Critical patent/JPS5585055A/en
Publication of JPS6141153B2 publication Critical patent/JPS6141153B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE:To lessen the equivalent resistance of a diode, by a mechanism wherein a pn-junction type FET and the pn-junction diode for fixing the gate DC potential are formed in the same substrate, and crystalline defect density in the portion near the junction of the diode is made higher than the density in the portion near a gate. CONSTITUTION:n-Type islands 12, 13 are mounted onto a p-type Si substrate 11, and an n-channel JFET2 is installed to the first island 12 and a pn-diode 3 to the second island 13. A p-type gate 14 is made up in a shape that crosses the island 12, and a channel 15 is built up under the gate 14 in a dividing shape. The p-type substrate also functions as a gate. A p-type region 21 is formed to the second island 13, and a pn-junction is mounted. The p-type region 21 of the diode is connected to an n<+>-type source 17 of a FET and an n<+>-type region 23 to the substrate gate 11. Crystalline defect density is heightened by selectively injecting helium ions near the region 21 of the diode, thus decreasing the equivalent resistance of the diode without increasing leakage currents between the gate and a drain.
JP15944178A 1978-12-21 1978-12-21 Semiconductor device Granted JPS5585055A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15944178A JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15944178A JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5585055A true JPS5585055A (en) 1980-06-26
JPS6141153B2 JPS6141153B2 (en) 1986-09-12

Family

ID=15693816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15944178A Granted JPS5585055A (en) 1978-12-21 1978-12-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5585055A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068980A (en) * 2001-08-29 2003-03-07 Denso Corp Drive circuit of junction fet, semiconductor device, and its manufacturing method
JP2006279608A (en) * 2005-03-29 2006-10-12 Epson Toyocom Corp Piezoelectric oscillator
JP2011217349A (en) * 2010-03-19 2011-10-27 Panasonic Corp Crystal oscillator circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003068980A (en) * 2001-08-29 2003-03-07 Denso Corp Drive circuit of junction fet, semiconductor device, and its manufacturing method
JP2006279608A (en) * 2005-03-29 2006-10-12 Epson Toyocom Corp Piezoelectric oscillator
JP2011217349A (en) * 2010-03-19 2011-10-27 Panasonic Corp Crystal oscillator circuit

Also Published As

Publication number Publication date
JPS6141153B2 (en) 1986-09-12

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