JPS5585055A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5585055A JPS5585055A JP15944178A JP15944178A JPS5585055A JP S5585055 A JPS5585055 A JP S5585055A JP 15944178 A JP15944178 A JP 15944178A JP 15944178 A JP15944178 A JP 15944178A JP S5585055 A JPS5585055 A JP S5585055A
- Authority
- JP
- Japan
- Prior art keywords
- type
- diode
- gate
- island
- junction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
- 230000007547 defect Effects 0.000 abstract 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- -1 helium ions Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE:To lessen the equivalent resistance of a diode, by a mechanism wherein a pn-junction type FET and the pn-junction diode for fixing the gate DC potential are formed in the same substrate, and crystalline defect density in the portion near the junction of the diode is made higher than the density in the portion near a gate. CONSTITUTION:n-Type islands 12, 13 are mounted onto a p-type Si substrate 11, and an n-channel JFET2 is installed to the first island 12 and a pn-diode 3 to the second island 13. A p-type gate 14 is made up in a shape that crosses the island 12, and a channel 15 is built up under the gate 14 in a dividing shape. The p-type substrate also functions as a gate. A p-type region 21 is formed to the second island 13, and a pn-junction is mounted. The p-type region 21 of the diode is connected to an n<+>-type source 17 of a FET and an n<+>-type region 23 to the substrate gate 11. Crystalline defect density is heightened by selectively injecting helium ions near the region 21 of the diode, thus decreasing the equivalent resistance of the diode without increasing leakage currents between the gate and a drain.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15944178A JPS5585055A (en) | 1978-12-21 | 1978-12-21 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15944178A JPS5585055A (en) | 1978-12-21 | 1978-12-21 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5585055A true JPS5585055A (en) | 1980-06-26 |
JPS6141153B2 JPS6141153B2 (en) | 1986-09-12 |
Family
ID=15693816
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15944178A Granted JPS5585055A (en) | 1978-12-21 | 1978-12-21 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5585055A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068980A (en) * | 2001-08-29 | 2003-03-07 | Denso Corp | Drive circuit of junction fet, semiconductor device, and its manufacturing method |
JP2006279608A (en) * | 2005-03-29 | 2006-10-12 | Epson Toyocom Corp | Piezoelectric oscillator |
JP2011217349A (en) * | 2010-03-19 | 2011-10-27 | Panasonic Corp | Crystal oscillator circuit |
-
1978
- 1978-12-21 JP JP15944178A patent/JPS5585055A/en active Granted
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003068980A (en) * | 2001-08-29 | 2003-03-07 | Denso Corp | Drive circuit of junction fet, semiconductor device, and its manufacturing method |
JP2006279608A (en) * | 2005-03-29 | 2006-10-12 | Epson Toyocom Corp | Piezoelectric oscillator |
JP2011217349A (en) * | 2010-03-19 | 2011-10-27 | Panasonic Corp | Crystal oscillator circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6141153B2 (en) | 1986-09-12 |
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