JPS5730389A - Optical communication device using optical semiconductor element for transmission and reception - Google Patents

Optical communication device using optical semiconductor element for transmission and reception

Info

Publication number
JPS5730389A
JPS5730389A JP10558180A JP10558180A JPS5730389A JP S5730389 A JPS5730389 A JP S5730389A JP 10558180 A JP10558180 A JP 10558180A JP 10558180 A JP10558180 A JP 10558180A JP S5730389 A JPS5730389 A JP S5730389A
Authority
JP
Japan
Prior art keywords
active layer
light
band width
forbidden band
reception
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10558180A
Other languages
Japanese (ja)
Inventor
Minoru Shikada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10558180A priority Critical patent/JPS5730389A/en
Publication of JPS5730389A publication Critical patent/JPS5730389A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Composite Materials (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To obtain a photodetector having high sensitivity by sequentially disposing semiconductor active layers for generating a light and detecting the light on a semiconductor substrate in a thicknesswise direction and controlling the forbidden band width of the active layer to reduce the decrease in the performance of the inside active layer. CONSTITUTION:Semiconductor active layers for generating a light and for detecting the light are sequentially disposed on a semiconductor substrate in the thicknesswise direction and the deterioration in the performance of the inside active layer can be reduced by controlling the forbidden band width of the active layer. That is, the second photodetecting active layer 5 having wider forbidden band width than the first active layer 3 formed on the first layer 2 is formed on the substrate 1. In this manner it can eliminate problems of the production of spike voltage and the occurrence of nonoperating time upon switching of the bias with high sensitivity of the photodetector.
JP10558180A 1980-07-31 1980-07-31 Optical communication device using optical semiconductor element for transmission and reception Pending JPS5730389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10558180A JPS5730389A (en) 1980-07-31 1980-07-31 Optical communication device using optical semiconductor element for transmission and reception

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10558180A JPS5730389A (en) 1980-07-31 1980-07-31 Optical communication device using optical semiconductor element for transmission and reception

Publications (1)

Publication Number Publication Date
JPS5730389A true JPS5730389A (en) 1982-02-18

Family

ID=14411462

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10558180A Pending JPS5730389A (en) 1980-07-31 1980-07-31 Optical communication device using optical semiconductor element for transmission and reception

Country Status (1)

Country Link
JP (1) JPS5730389A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189361U (en) * 1983-06-02 1984-12-15 オムロン株式会社 Optical transceiver device
US4814667A (en) * 1986-04-17 1989-03-21 Kabushiki Kaisha Toshiba Light emitting diode array having uniform illuminance distribution
JPH01120874A (en) * 1987-11-04 1989-05-12 Matsushita Electric Ind Co Ltd Semiconductor photodetector/light emitting device
US4967241A (en) * 1985-03-26 1990-10-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2006515075A (en) * 2002-12-20 2006-05-18 マウナ ケア テクノロジーズ Parallel confocal laser microscope apparatus based on VCSEL technology

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105283A (en) * 1974-05-28 1976-09-17 Thomson Csf Kotaihatsuko jukososhi
JPS54138303A (en) * 1978-04-19 1979-10-26 Matsushita Electric Ind Co Ltd Light emitting element and photo detector

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51105283A (en) * 1974-05-28 1976-09-17 Thomson Csf Kotaihatsuko jukososhi
JPS54138303A (en) * 1978-04-19 1979-10-26 Matsushita Electric Ind Co Ltd Light emitting element and photo detector

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189361U (en) * 1983-06-02 1984-12-15 オムロン株式会社 Optical transceiver device
US4967241A (en) * 1985-03-26 1990-10-30 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US4814667A (en) * 1986-04-17 1989-03-21 Kabushiki Kaisha Toshiba Light emitting diode array having uniform illuminance distribution
JPH01120874A (en) * 1987-11-04 1989-05-12 Matsushita Electric Ind Co Ltd Semiconductor photodetector/light emitting device
JP2006515075A (en) * 2002-12-20 2006-05-18 マウナ ケア テクノロジーズ Parallel confocal laser microscope apparatus based on VCSEL technology

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