JPS56146286A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS56146286A
JPS56146286A JP4862280A JP4862280A JPS56146286A JP S56146286 A JPS56146286 A JP S56146286A JP 4862280 A JP4862280 A JP 4862280A JP 4862280 A JP4862280 A JP 4862280A JP S56146286 A JPS56146286 A JP S56146286A
Authority
JP
Japan
Prior art keywords
ypy
ionization
layer
conductive type
coefficient
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4862280A
Other languages
Japanese (ja)
Inventor
Yoshifumi Takanashi
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP4862280A priority Critical patent/JPS56146286A/en
Publication of JPS56146286A publication Critical patent/JPS56146286A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To reduce multiplication noise as well as to obtain specific wavelength sensitivity by a method wherein an avalanche multiplication is generated with the aid of the P-N junction of the In1-xGaxAs1-yPy (y=2.2x, x>0.1) semiconductor crystal having a larger coefficient of ionization for electron than the coefficient of ionization for a positive hole. CONSTITUTION:The avalanche multiplication is generated by having the P-N junction of the In1-xGaxAs1-yPy (y=2.2x, x>0.1) semiconductor crystal which has a larger coefficient of ionization for electron than the coefficient of ionization for the positive hole. On the first conductive type InP substrate 11, the first conductive type In1-xGa1-xAs1-yPy layer 12, the second conductive type In1-xGaxAs1-yPy layer 13 and the second conductive type In0.47Ga0.53As layer 14 are formed successively and the avalanche multiplication is generated using the P-N junction 17. Through these procedures, the multiplication noise is reduced and the semiconductor photodetector, having the light wavelength sensitivity to the extent of about 1.6mum corresponding to the band gap of the In0.47Ga0.53As layer, can be obtained.
JP4862280A 1980-04-15 1980-04-15 Semiconductor photodetector Pending JPS56146286A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4862280A JPS56146286A (en) 1980-04-15 1980-04-15 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4862280A JPS56146286A (en) 1980-04-15 1980-04-15 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS56146286A true JPS56146286A (en) 1981-11-13

Family

ID=12808497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4862280A Pending JPS56146286A (en) 1980-04-15 1980-04-15 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS56146286A (en)

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