JPS5792877A - Photo-receiving semiconductor - Google Patents

Photo-receiving semiconductor

Info

Publication number
JPS5792877A
JPS5792877A JP56113769A JP11376981A JPS5792877A JP S5792877 A JPS5792877 A JP S5792877A JP 56113769 A JP56113769 A JP 56113769A JP 11376981 A JP11376981 A JP 11376981A JP S5792877 A JPS5792877 A JP S5792877A
Authority
JP
Japan
Prior art keywords
layer
insular
twice
photo
circular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56113769A
Other languages
Japanese (ja)
Other versions
JPS5912034B2 (en
Inventor
Kazuo Hagimura
Haruo Mori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP56113769A priority Critical patent/JPS5912034B2/en
Publication of JPS5792877A publication Critical patent/JPS5792877A/en
Publication of JPS5912034B2 publication Critical patent/JPS5912034B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/03529—Shape of the potential jump barrier or surface barrier

Abstract

PURPOSE:To reduce a junction capacity without deteriorating photo-receiving sensitivity by a method wherein an annular or insular semiconductor layers of inverse conducting type against a substrate are formed. CONSTITUTION:A circular P layer 2 is or a plurality of insular P layer 2 are, formed on a N type substrate and Al electrodes 4 are added. The inner diameter of the circular P layer 2 or the mutual distance between the insular P layers 2 is determined in such a manner that each of them is less than twice the length of a diffusion length of a minority carrier and more than twice of a spreading width of a depletion layer when operating bias is applied. With above configuration the effective photodetecting portion is the region surrounded by a surface 6 and a high photodetecting sensitivity can be obtained as if there existed the P layer 2 in a portion where it is actually missing. On the other hand the missing portion reduces a junction area and a junction capacity is reduced, so that a response speed of the photodiode can be increased as for as it can be regulated by a time constant.
JP56113769A 1981-07-22 1981-07-22 Light receiving semiconductor device Expired JPS5912034B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56113769A JPS5912034B2 (en) 1981-07-22 1981-07-22 Light receiving semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56113769A JPS5912034B2 (en) 1981-07-22 1981-07-22 Light receiving semiconductor device

Publications (2)

Publication Number Publication Date
JPS5792877A true JPS5792877A (en) 1982-06-09
JPS5912034B2 JPS5912034B2 (en) 1984-03-19

Family

ID=14620664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56113769A Expired JPS5912034B2 (en) 1981-07-22 1981-07-22 Light receiving semiconductor device

Country Status (1)

Country Link
JP (1) JPS5912034B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154579A (en) * 1983-12-20 1985-08-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Semiconductor device
JPH01150371A (en) * 1987-12-07 1989-06-13 Matsushita Electric Ind Co Ltd Photodetector
WO1989006052A1 (en) * 1987-12-14 1989-06-29 Santa Barbara Research Center Reticulated junction photodiode having enhanced responsivity to short wavelength radiation
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5909041A (en) * 1997-11-21 1999-06-01 Xerox Corporation Photogate sensor with improved responsivity

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6381135B2 (en) * 2015-04-21 2018-08-29 マイクロシグナル株式会社 Photoelectric conversion element
JP2017208501A (en) 2016-05-20 2017-11-24 マイクロシグナル株式会社 Photoelectric conversion element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527916A (en) * 1975-07-07 1977-01-21 Ube Ind Ltd Process for preparation of oxamido

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS527916A (en) * 1975-07-07 1977-01-21 Ube Ind Ltd Process for preparation of oxamido

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60154579A (en) * 1983-12-20 1985-08-14 エヌ・ベー・フイリツプス・フルーイランペンフアブリケン Semiconductor device
JPH01150371A (en) * 1987-12-07 1989-06-13 Matsushita Electric Ind Co Ltd Photodetector
WO1989006052A1 (en) * 1987-12-14 1989-06-29 Santa Barbara Research Center Reticulated junction photodiode having enhanced responsivity to short wavelength radiation
US5049962A (en) * 1990-03-07 1991-09-17 Santa Barbara Research Center Control of optical crosstalk between adjacent photodetecting regions
US5909041A (en) * 1997-11-21 1999-06-01 Xerox Corporation Photogate sensor with improved responsivity

Also Published As

Publication number Publication date
JPS5912034B2 (en) 1984-03-19

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