GB1516627A - Method of producing a semiconductor photodiode of indium antimonide and device thereof - Google Patents

Method of producing a semiconductor photodiode of indium antimonide and device thereof

Info

Publication number
GB1516627A
GB1516627A GB19275/77A GB1927577A GB1516627A GB 1516627 A GB1516627 A GB 1516627A GB 19275/77 A GB19275/77 A GB 19275/77A GB 1927577 A GB1927577 A GB 1927577A GB 1516627 A GB1516627 A GB 1516627A
Authority
GB
United Kingdom
Prior art keywords
producing
indium antimonide
semiconductor photodiode
semiconductor
photodiode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB19275/77A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB1516627A publication Critical patent/GB1516627A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)

Abstract

1516627 Semiconductor photodiodes D H POMMERRENIG 9 May 1977 [8 Nov 1976] 19275/77 Heading H1K A photodiode comprises a pn junction between a substrate of InSb and an epitaxial layer, deposited from vapour or liquid phase, of In Sb 1-x (As or P) x , the preferred value of x being 0À05.
GB19275/77A 1976-11-08 1977-05-09 Method of producing a semiconductor photodiode of indium antimonide and device thereof Expired GB1516627A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73965976A 1976-11-08 1976-11-08

Publications (1)

Publication Number Publication Date
GB1516627A true GB1516627A (en) 1978-07-05

Family

ID=24973264

Family Applications (1)

Application Number Title Priority Date Filing Date
GB19275/77A Expired GB1516627A (en) 1976-11-08 1977-05-09 Method of producing a semiconductor photodiode of indium antimonide and device thereof

Country Status (7)

Country Link
JP (1) JPS5358791A (en)
CA (1) CA1081835A (en)
DE (1) DE2720952A1 (en)
FR (1) FR2370366A1 (en)
GB (1) GB1516627A (en)
NL (1) NL7705212A (en)
SE (1) SE7705622L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768048B2 (en) 2003-09-09 2010-08-03 Asahi Kasei Emd Corporation Infrared sensor IC, and infrared sensor and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1489613A (en) * 1965-08-19 1967-11-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7768048B2 (en) 2003-09-09 2010-08-03 Asahi Kasei Emd Corporation Infrared sensor IC, and infrared sensor and manufacturing method thereof

Also Published As

Publication number Publication date
FR2370366A1 (en) 1978-06-02
DE2720952A1 (en) 1978-05-24
CA1081835A (en) 1980-07-15
SE7705622L (en) 1978-05-09
JPS5358791A (en) 1978-05-26
FR2370366B3 (en) 1980-06-20
NL7705212A (en) 1978-05-10

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee