JPS5358791A - Semiconductor photodiode and method of producing same - Google Patents

Semiconductor photodiode and method of producing same

Info

Publication number
JPS5358791A
JPS5358791A JP10715577A JP10715577A JPS5358791A JP S5358791 A JPS5358791 A JP S5358791A JP 10715577 A JP10715577 A JP 10715577A JP 10715577 A JP10715577 A JP 10715577A JP S5358791 A JPS5358791 A JP S5358791A
Authority
JP
Japan
Prior art keywords
producing same
semiconductor photodiode
photodiode
semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10715577A
Other languages
Japanese (ja)
Inventor
Etsuchi Pomerenitsuku Deita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hamamatsu TV Co Ltd
Original Assignee
Hamamatsu TV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu TV Co Ltd filed Critical Hamamatsu TV Co Ltd
Publication of JPS5358791A publication Critical patent/JPS5358791A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/109—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
JP10715577A 1976-11-08 1977-09-05 Semiconductor photodiode and method of producing same Pending JPS5358791A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US73965976A 1976-11-08 1976-11-08

Publications (1)

Publication Number Publication Date
JPS5358791A true JPS5358791A (en) 1978-05-26

Family

ID=24973264

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10715577A Pending JPS5358791A (en) 1976-11-08 1977-09-05 Semiconductor photodiode and method of producing same

Country Status (7)

Country Link
JP (1) JPS5358791A (en)
CA (1) CA1081835A (en)
DE (1) DE2720952A1 (en)
FR (1) FR2370366A1 (en)
GB (1) GB1516627A (en)
NL (1) NL7705212A (en)
SE (1) SE7705622L (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027228A1 (en) 2003-09-09 2005-03-24 Asahi Kasei Kabushiki Kaisha Infrared sensor ic, infrared sensor and method for producing same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436625A (en) * 1965-08-19 1969-04-01 Philips Corp Semiconductor device comprising iii-v epitaxial deposit on substitutional iii-v substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3436625A (en) * 1965-08-19 1969-04-01 Philips Corp Semiconductor device comprising iii-v epitaxial deposit on substitutional iii-v substrate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005027228A1 (en) 2003-09-09 2005-03-24 Asahi Kasei Kabushiki Kaisha Infrared sensor ic, infrared sensor and method for producing same
EP2023398A2 (en) 2003-09-09 2009-02-11 Asahi Kasei EMD Corporation Infrared sensor IC, and infrared sensor and manufacturing method thereof

Also Published As

Publication number Publication date
CA1081835A (en) 1980-07-15
SE7705622L (en) 1978-05-09
FR2370366B3 (en) 1980-06-20
NL7705212A (en) 1978-05-10
GB1516627A (en) 1978-07-05
DE2720952A1 (en) 1978-05-24
FR2370366A1 (en) 1978-06-02

Similar Documents

Publication Publication Date Title
JPS5331961A (en) Method of making semiconductor
JPS53121493A (en) Semiconductor and method of producing same
JPS5353276A (en) Method of producing semiconductor device
JPS52113686A (en) Method of producing semiconductor device
JPS52137276A (en) Method of producing semiconductor device
JPS5364486A (en) Semiconductor and method of producing same
JPS5321587A (en) Method of producing semiconductor device
JPS5294781A (en) Method of producing semiconductor device
JPS53134378A (en) Semiconductor and method of forming same
JPS531476A (en) Semiconductor element and method of producing same
JPS5310289A (en) Method of producing semiconductor device
JPS52139386A (en) Method of producing semiconductor device and semiconductor device
JPS5453861A (en) Semiconductor device and method of producing same
JPS52119083A (en) Method of producing semiconductor device
JPS5349961A (en) Semiconductor element structure and method of producing same
JPS5383585A (en) Semiconductor structure and method of producing same
JPS52141583A (en) Method of producing semiconductor device
JPS5478678A (en) Semiconductor and method of producing same
JPS5491187A (en) Semiconductor and method of fabricating same
JPS5331984A (en) Semiconductor structure and method of producing same
JPS5390779A (en) Semiconductor and method of producing same
JPS5448487A (en) Method of producing semiconductor
JPS53100784A (en) Semiconductor and method of producing same
JPS5331976A (en) Composite semiconductor device and method of producing same
JPS5334480A (en) Method of producing semiconductor element