JPS53100784A - Semiconductor and method of producing same - Google Patents
Semiconductor and method of producing sameInfo
- Publication number
- JPS53100784A JPS53100784A JP1505078A JP1505078A JPS53100784A JP S53100784 A JPS53100784 A JP S53100784A JP 1505078 A JP1505078 A JP 1505078A JP 1505078 A JP1505078 A JP 1505078A JP S53100784 A JPS53100784 A JP S53100784A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- producing same
- producing
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US76913877A | 1977-02-15 | 1977-02-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53100784A true JPS53100784A (en) | 1978-09-02 |
JPS5551343B2 JPS5551343B2 (en) | 1980-12-23 |
Family
ID=25084568
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1505078A Granted JPS53100784A (en) | 1977-02-15 | 1978-02-14 | Semiconductor and method of producing same |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS53100784A (en) |
DE (1) | DE2806410A1 (en) |
FR (1) | FR2380637A1 (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5863823A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Semiconductor Corporation | Self-aligned edge control in silicon on insulator |
US5973382A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corporation | Capacitor on ultrathin semiconductor on insulator |
US5864162A (en) * | 1993-07-12 | 1999-01-26 | Peregrine Seimconductor Corporation | Apparatus and method of making a self-aligned integrated resistor load on ultrathin silicon on sapphire |
US5973363A (en) * | 1993-07-12 | 1999-10-26 | Peregrine Semiconductor Corp. | CMOS circuitry with shortened P-channel length on ultrathin silicon on insulator |
US5930638A (en) * | 1993-07-12 | 1999-07-27 | Peregrine Semiconductor Corp. | Method of making a low parasitic resistor on ultrathin silicon on insulator |
DE10029288A1 (en) * | 2000-06-14 | 2002-01-03 | Infineon Technologies Ag | Process for the production of a planar mask on topology-containing surfaces |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4917069A (en) * | 1972-06-10 | 1974-02-15 | ||
JPS504511A (en) * | 1972-06-15 | 1975-01-17 | ||
JPS5034176A (en) * | 1973-07-30 | 1975-04-02 | ||
JPS5056184A (en) * | 1973-09-03 | 1975-05-16 | ||
JPS50151480A (en) * | 1974-05-24 | 1975-12-05 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1160744A (en) * | 1965-11-05 | 1969-08-06 | Plessey Co Ltd | Improvements in or relating to Semiconductor Devices |
US3740280A (en) * | 1971-05-14 | 1973-06-19 | Rca Corp | Method of making semiconductor device |
US3865653A (en) * | 1971-10-12 | 1975-02-11 | Karl Goser | Logic circuit having a switching transistor and a load transistor, in particular for a semiconductor storage element |
DE2446558A1 (en) * | 1974-09-30 | 1976-04-01 | Siemens Ag | Complementary MIS ccts. - impurity atoms in transistors with channels of same type as control layer ensure charge compensation |
-
1978
- 1978-02-09 FR FR7803655A patent/FR2380637A1/en not_active Withdrawn
- 1978-02-14 JP JP1505078A patent/JPS53100784A/en active Granted
- 1978-02-15 DE DE19782806410 patent/DE2806410A1/en not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4917069A (en) * | 1972-06-10 | 1974-02-15 | ||
JPS504511A (en) * | 1972-06-15 | 1975-01-17 | ||
JPS5034176A (en) * | 1973-07-30 | 1975-04-02 | ||
JPS5056184A (en) * | 1973-09-03 | 1975-05-16 | ||
JPS50151480A (en) * | 1974-05-24 | 1975-12-05 |
Also Published As
Publication number | Publication date |
---|---|
FR2380637A1 (en) | 1978-09-08 |
DE2806410A1 (en) | 1978-08-17 |
JPS5551343B2 (en) | 1980-12-23 |
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