JPS53108387A - Junction semiconductor and method of producing same - Google Patents

Junction semiconductor and method of producing same

Info

Publication number
JPS53108387A
JPS53108387A JP1203278A JP1203278A JPS53108387A JP S53108387 A JPS53108387 A JP S53108387A JP 1203278 A JP1203278 A JP 1203278A JP 1203278 A JP1203278 A JP 1203278A JP S53108387 A JPS53108387 A JP S53108387A
Authority
JP
Japan
Prior art keywords
producing same
junction semiconductor
junction
semiconductor
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1203278A
Other languages
Japanese (ja)
Inventor
Suchiyuaato Adoraa Maikeru
Arubaato Keisu Tenpur Buikutaa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JPS53108387A publication Critical patent/JPS53108387A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP1203278A 1977-02-07 1978-02-07 Junction semiconductor and method of producing same Pending JPS53108387A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76661477A 1977-02-07 1977-02-07

Publications (1)

Publication Number Publication Date
JPS53108387A true JPS53108387A (en) 1978-09-21

Family

ID=25076978

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1203278A Pending JPS53108387A (en) 1977-02-07 1978-02-07 Junction semiconductor and method of producing same

Country Status (1)

Country Link
JP (1) JPS53108387A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159064A (en) * 1981-03-26 1982-10-01 Nec Home Electronics Ltd Semiconductor device
JPS62235782A (en) * 1986-04-07 1987-10-15 Toyota Central Res & Dev Lab Inc Semiconductor device
JPS649658A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Gto thyristor
JPH0629558A (en) * 1992-07-08 1994-02-04 Naoshige Tamamushi Electrostatic induction diode having planar structure
JPH0637335A (en) * 1992-07-15 1994-02-10 Naoshige Tamamushi Static induction diode having buried structure or cut-in structure

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915383A (en) * 1972-05-17 1974-02-09
JPS51142280A (en) * 1975-06-03 1976-12-07 Toshiba Corp Gate turn-off thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4915383A (en) * 1972-05-17 1974-02-09
JPS51142280A (en) * 1975-06-03 1976-12-07 Toshiba Corp Gate turn-off thyristor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57159064A (en) * 1981-03-26 1982-10-01 Nec Home Electronics Ltd Semiconductor device
JPS62235782A (en) * 1986-04-07 1987-10-15 Toyota Central Res & Dev Lab Inc Semiconductor device
JPH0553073B2 (en) * 1986-04-07 1993-08-09 Toyoda Chuo Kenkyusho Kk
JPS649658A (en) * 1987-07-01 1989-01-12 Mitsubishi Electric Corp Gto thyristor
JPH0629558A (en) * 1992-07-08 1994-02-04 Naoshige Tamamushi Electrostatic induction diode having planar structure
JPH0637335A (en) * 1992-07-15 1994-02-10 Naoshige Tamamushi Static induction diode having buried structure or cut-in structure

Similar Documents

Publication Publication Date Title
JPS53121493A (en) Semiconductor and method of producing same
JPS53143180A (en) Amorphous semiconductor structure and method of producing same
JPS53148273A (en) Method of producing semiconductor
JPS542671A (en) Method of producing semiconductor
JPS53134378A (en) Semiconductor and method of forming same
JPS5364486A (en) Semiconductor and method of producing same
JPS5446485A (en) Method of producing semiconductor
JPS53107287A (en) Method of producing semiconductor
JPS53128286A (en) Method of producing semiconductor
JPS5453861A (en) Semiconductor device and method of producing same
JPS5427376A (en) Method of producing semiconductor
JPS53128273A (en) Method of producing semiconductor
JPS5419677A (en) Method of producing semiconductor
JPS53138292A (en) Method of producing semiconductor
JPS5422159A (en) Method of producing semiconductor
JPS5478678A (en) Semiconductor and method of producing same
JPS5383585A (en) Semiconductor structure and method of producing same
JPS5491187A (en) Semiconductor and method of fabricating same
JPS5390779A (en) Semiconductor and method of producing same
JPS5331984A (en) Semiconductor structure and method of producing same
JPS53100784A (en) Semiconductor and method of producing same
JPS5434782A (en) Improvement in solid semiconductor and method of producing same
JPS53108387A (en) Junction semiconductor and method of producing same
JPS5390776A (en) Method of producing semiconductor
JPS5491740A (en) Semiconductor apparatus and method of producing same