GB1160744A - Improvements in or relating to Semiconductor Devices - Google Patents

Improvements in or relating to Semiconductor Devices

Info

Publication number
GB1160744A
GB1160744A GB4710465A GB4710465A GB1160744A GB 1160744 A GB1160744 A GB 1160744A GB 4710465 A GB4710465 A GB 4710465A GB 4710465 A GB4710465 A GB 4710465A GB 1160744 A GB1160744 A GB 1160744A
Authority
GB
United Kingdom
Prior art keywords
semi
silicon
regions
conductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4710465A
Inventor
Ronald James Wilkes
Brian David Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB4710365A priority Critical patent/GB1160267A/en
Priority to GB4710465A priority patent/GB1160744A/en
Publication of GB1160744A publication Critical patent/GB1160744A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76294—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using selective deposition of single crystal silicon, i.e. SEG techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Light Receiving Elements (AREA)

Abstract

1,160,744. Semi-conductor devices. PLESSEY CO. Ltd. 28 Oct., 1966 [5 Nov., 1965], No. 47104/65. Heading H1K. A semi-conductor structure comprises an insulating substrate 4 on which are deposited regions 1, 2 of P-type and N-type semi-conductor material separated by a dielectric spacer 3. The substrate may be a single crystal of alpha-alumina or quartz and the regions 1, 2 may be of silicon produced by thermal decomposition of doped silicon hydride vapour or by evaporation of doped silicon. The dielectric spacer 3 may be of silicon dioxide produced by thermal oxidation of silicon deposited on the substrate or by the decomposition of a volatile silicon compound. Semi-conductor devices can be formed in the various regions and interconnected to form an integrated circuit.
GB4710465A 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices Expired GB1160744A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB4710365A GB1160267A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices
GB4710465A GB1160744A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB4710365A GB1160267A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices
GB4710465A GB1160744A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices

Publications (1)

Publication Number Publication Date
GB1160744A true GB1160744A (en) 1969-08-06

Family

ID=26265969

Family Applications (2)

Application Number Title Priority Date Filing Date
GB4710365A Expired GB1160267A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices
GB4710465A Expired GB1160744A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB4710365A Expired GB1160267A (en) 1965-11-05 1965-11-05 Improvements in or relating to Semiconductor Devices

Country Status (1)

Country Link
GB (2) GB1160267A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2172200A1 (en) * 1972-02-17 1973-09-28 Siemens Ag
US3893152A (en) * 1973-07-25 1975-07-01 Hung Chang Lin Metal nitride oxide semiconductor integrated circuit structure
FR2380637A1 (en) * 1977-02-15 1978-09-08 Westinghouse Electric Corp Planar semiconductor with silicon islands on sapphire substrate - sepd. by insulating material built up to same level as islands
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
US4348804A (en) * 1978-07-12 1982-09-14 Vlsi Technology Research Association Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation
EP0090624A2 (en) * 1982-03-26 1983-10-05 Fujitsu Limited MOS semiconductor device and method of producing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2172200A1 (en) * 1972-02-17 1973-09-28 Siemens Ag
US3893152A (en) * 1973-07-25 1975-07-01 Hung Chang Lin Metal nitride oxide semiconductor integrated circuit structure
FR2380637A1 (en) * 1977-02-15 1978-09-08 Westinghouse Electric Corp Planar semiconductor with silicon islands on sapphire substrate - sepd. by insulating material built up to same level as islands
US4348804A (en) * 1978-07-12 1982-09-14 Vlsi Technology Research Association Method of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidation
US4199384A (en) * 1979-01-29 1980-04-22 Rca Corporation Method of making a planar semiconductor on insulating substrate device utilizing the deposition of a dual dielectric layer between device islands
EP0090624A2 (en) * 1982-03-26 1983-10-05 Fujitsu Limited MOS semiconductor device and method of producing the same
EP0090624A3 (en) * 1982-03-26 1986-03-26 Fujitsu Limited Mos semiconductor device and method of producing the same
US4665419A (en) * 1982-03-26 1987-05-12 Fujitsu Limited Semiconductor device

Also Published As

Publication number Publication date
GB1160267A (en) 1969-08-06

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Legal Events

Date Code Title Description
PS Patent sealed
PE Patent expired