GB1515837A - Semiconductor process - Google Patents

Semiconductor process

Info

Publication number
GB1515837A
GB1515837A GB16291/77A GB1629177A GB1515837A GB 1515837 A GB1515837 A GB 1515837A GB 16291/77 A GB16291/77 A GB 16291/77A GB 1629177 A GB1629177 A GB 1629177A GB 1515837 A GB1515837 A GB 1515837A
Authority
GB
United Kingdom
Prior art keywords
layer
amorphous
substrate
monocrystalline
epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB16291/77A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1515837A publication Critical patent/GB1515837A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1515837 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 19 April 1977 [11 May 1976] 16291/77 Heading H1K An epitaxial Si layer is provided on a monocrystalline Si substrate 10 by depositing a polycrystalline Si layer 11 on the substrate 10 at a temperature below 1000‹ C., ion-bombarding the device to render the Si layer 11 amorphous up to the interface between the two layers, and annealing, to convert the amorphous Si into a monocrystalline epitaxial layer.
GB16291/77A 1976-05-11 1977-04-19 Semiconductor process Expired GB1515837A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68524876A 1976-05-11 1976-05-11

Publications (1)

Publication Number Publication Date
GB1515837A true GB1515837A (en) 1978-06-28

Family

ID=24751374

Family Applications (1)

Application Number Title Priority Date Filing Date
GB16291/77A Expired GB1515837A (en) 1976-05-11 1977-04-19 Semiconductor process

Country Status (5)

Country Link
JP (1) JPS52136568A (en)
DE (1) DE2711543A1 (en)
FR (1) FR2350877A1 (en)
GB (1) GB1515837A (en)
IT (1) IT1115628B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012073205A1 (en) * 2010-12-01 2012-06-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for preparing a coarse-grain crystallised silicon layer

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3126050A1 (en) * 1981-07-02 1983-01-13 Hanno Prof. Dr. 2000 Hamburg Schaumburg Process for preparing monocrystalline or coarsely polycrystalline layers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3900345A (en) * 1973-08-02 1975-08-19 Motorola Inc Thin low temperature epi regions by conversion of an amorphous layer

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012073205A1 (en) * 2010-12-01 2012-06-07 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for preparing a coarse-grain crystallised silicon layer
FR2968316A1 (en) * 2010-12-01 2012-06-08 Commissariat Energie Atomique PROCESS FOR THE PREPARATION OF A CRYSTALLIZED SILICON LAYER WITH BIG GRAINS

Also Published As

Publication number Publication date
IT1115628B (en) 1986-02-03
JPS52136568A (en) 1977-11-15
FR2350877A1 (en) 1977-12-09
DE2711543A1 (en) 1977-11-24

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee