GB1515837A - Semiconductor process - Google Patents
Semiconductor processInfo
- Publication number
- GB1515837A GB1515837A GB16291/77A GB1629177A GB1515837A GB 1515837 A GB1515837 A GB 1515837A GB 16291/77 A GB16291/77 A GB 16291/77A GB 1629177 A GB1629177 A GB 1629177A GB 1515837 A GB1515837 A GB 1515837A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- amorphous
- substrate
- monocrystalline
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
- C30B1/023—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing from solids with amorphous structure
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1515837 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 19 April 1977 [11 May 1976] 16291/77 Heading H1K An epitaxial Si layer is provided on a monocrystalline Si substrate 10 by depositing a polycrystalline Si layer 11 on the substrate 10 at a temperature below 1000‹ C., ion-bombarding the device to render the Si layer 11 amorphous up to the interface between the two layers, and annealing, to convert the amorphous Si into a monocrystalline epitaxial layer.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US68524876A | 1976-05-11 | 1976-05-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1515837A true GB1515837A (en) | 1978-06-28 |
Family
ID=24751374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB16291/77A Expired GB1515837A (en) | 1976-05-11 | 1977-04-19 | Semiconductor process |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS52136568A (en) |
DE (1) | DE2711543A1 (en) |
FR (1) | FR2350877A1 (en) |
GB (1) | GB1515837A (en) |
IT (1) | IT1115628B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012073205A1 (en) * | 2010-12-01 | 2012-06-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for preparing a coarse-grain crystallised silicon layer |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3126050A1 (en) * | 1981-07-02 | 1983-01-13 | Hanno Prof. Dr. 2000 Hamburg Schaumburg | Process for preparing monocrystalline or coarsely polycrystalline layers |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3900345A (en) * | 1973-08-02 | 1975-08-19 | Motorola Inc | Thin low temperature epi regions by conversion of an amorphous layer |
-
1977
- 1977-03-17 IT IT21347/77A patent/IT1115628B/en active
- 1977-03-17 DE DE19772711543 patent/DE2711543A1/en active Pending
- 1977-03-25 FR FR7709628A patent/FR2350877A1/en not_active Withdrawn
- 1977-04-19 GB GB16291/77A patent/GB1515837A/en not_active Expired
- 1977-04-22 JP JP4597777A patent/JPS52136568A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012073205A1 (en) * | 2010-12-01 | 2012-06-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Method for preparing a coarse-grain crystallised silicon layer |
FR2968316A1 (en) * | 2010-12-01 | 2012-06-08 | Commissariat Energie Atomique | PROCESS FOR THE PREPARATION OF A CRYSTALLIZED SILICON LAYER WITH BIG GRAINS |
Also Published As
Publication number | Publication date |
---|---|
JPS52136568A (en) | 1977-11-15 |
IT1115628B (en) | 1986-02-03 |
FR2350877A1 (en) | 1977-12-09 |
DE2711543A1 (en) | 1977-11-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed | ||
PCNP | Patent ceased through non-payment of renewal fee |