JPS5467765A - Production of semiconductor device of gallium arsenide - Google Patents

Production of semiconductor device of gallium arsenide

Info

Publication number
JPS5467765A
JPS5467765A JP13364177A JP13364177A JPS5467765A JP S5467765 A JPS5467765 A JP S5467765A JP 13364177 A JP13364177 A JP 13364177A JP 13364177 A JP13364177 A JP 13364177A JP S5467765 A JPS5467765 A JP S5467765A
Authority
JP
Japan
Prior art keywords
layer
gallium arsenide
semiconductor device
forming
protecting film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP13364177A
Other languages
Japanese (ja)
Other versions
JPS5535848B2 (en
Inventor
Yasushi Kawakami
Takeshi Asao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP13364177A priority Critical patent/JPS5467765A/en
Publication of JPS5467765A publication Critical patent/JPS5467765A/en
Publication of JPS5535848B2 publication Critical patent/JPS5535848B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: To produce a semiconductor device of gallium arsenide without contaminating the surface of its operating layer by forming the operating layer then forming a protecting film within the same heat cycle.
CONSTITUTION: A buffer layer 2 composed of an epitaxial layer of gallium arsenide of higher specific resistance, an operating layer 3 composed of a first gallium arsenid layer and a protecting film 27 composed of a second epitaxial layer of gallium arsenide thereon are provided on a semi-insulation type substrate 1 of gallium arsenide. There comprise continuoulsy forming the buffer layer 2, operating layer 3 and protecting film 27 on the semi-insulation type substrate 1 within the same heat cycle by an epitaxial growth process.
COPYRIGHT: (C)1979,JPO&Japio
JP13364177A 1977-11-09 1977-11-09 Production of semiconductor device of gallium arsenide Granted JPS5467765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13364177A JPS5467765A (en) 1977-11-09 1977-11-09 Production of semiconductor device of gallium arsenide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13364177A JPS5467765A (en) 1977-11-09 1977-11-09 Production of semiconductor device of gallium arsenide

Publications (2)

Publication Number Publication Date
JPS5467765A true JPS5467765A (en) 1979-05-31
JPS5535848B2 JPS5535848B2 (en) 1980-09-17

Family

ID=15109558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13364177A Granted JPS5467765A (en) 1977-11-09 1977-11-09 Production of semiconductor device of gallium arsenide

Country Status (1)

Country Link
JP (1) JPS5467765A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166832U (en) * 1982-04-28 1983-11-07 サ−モニクス株式会社 Shaking machine

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS611251A (en) * 1984-06-12 1986-01-07 Sankyo Seiki Mfg Co Ltd Linearly driving device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58166832U (en) * 1982-04-28 1983-11-07 サ−モニクス株式会社 Shaking machine

Also Published As

Publication number Publication date
JPS5535848B2 (en) 1980-09-17

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