JPS5736876A - Semiconductor photodetector - Google Patents

Semiconductor photodetector

Info

Publication number
JPS5736876A
JPS5736876A JP11252480A JP11252480A JPS5736876A JP S5736876 A JPS5736876 A JP S5736876A JP 11252480 A JP11252480 A JP 11252480A JP 11252480 A JP11252480 A JP 11252480A JP S5736876 A JPS5736876 A JP S5736876A
Authority
JP
Japan
Prior art keywords
layer
thin film
gaas
configuration
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11252480A
Other languages
Japanese (ja)
Inventor
Yoshifumi Takanashi
Yoshiharu Horikoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP11252480A priority Critical patent/JPS5736876A/en
Publication of JPS5736876A publication Critical patent/JPS5736876A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To reduce low noise characteristic and low dark current characteristic in a semiconductor photodetector by forming an avalanche acceleration layer of superlattice configuration and forming a P-N junction in a thin film layer made of gallium and arsenic forming the superlattice configuration. CONSTITUTION:A superlattice configuration 11 formed by laminating more than 25 layers of thin film layers made of N type Ge and thin film layers made of GaAs is formed on the surface of a GaAs crystalline substrate 10. The uppermost layer of the configuration 11 is made of a GaAs thin film layer. A GaAs crystalline layer 13 of P type surrounded by a guard ring layer 12 is formed on the predetermined region of the GaAs thin layer of the configuration 11. A P type electrode 15 connected to the layer 13 is formed on an insulating layer 14 formed on the exposed surface of the uppermost thin film layer and the layer 12. Then, an N type electrode 6 is formed on the back surface of the substrate 10.
JP11252480A 1980-08-15 1980-08-15 Semiconductor photodetector Pending JPS5736876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11252480A JPS5736876A (en) 1980-08-15 1980-08-15 Semiconductor photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11252480A JPS5736876A (en) 1980-08-15 1980-08-15 Semiconductor photodetector

Publications (1)

Publication Number Publication Date
JPS5736876A true JPS5736876A (en) 1982-02-27

Family

ID=14588794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11252480A Pending JPS5736876A (en) 1980-08-15 1980-08-15 Semiconductor photodetector

Country Status (1)

Country Link
JP (1) JPS5736876A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6410147B1 (en) 2000-08-24 2002-06-25 E. I. Du Pont De Nemours And Company Low gloss crosslinkable coating compositions

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6410147B1 (en) 2000-08-24 2002-06-25 E. I. Du Pont De Nemours And Company Low gloss crosslinkable coating compositions

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