JPS56111275A - Luminous semiconductor device - Google Patents

Luminous semiconductor device

Info

Publication number
JPS56111275A
JPS56111275A JP1450480A JP1450480A JPS56111275A JP S56111275 A JPS56111275 A JP S56111275A JP 1450480 A JP1450480 A JP 1450480A JP 1450480 A JP1450480 A JP 1450480A JP S56111275 A JPS56111275 A JP S56111275A
Authority
JP
Japan
Prior art keywords
layer
type
constitution
electrode
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1450480A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Toru Tejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Stanley Electric Co Ltd
Original Assignee
Semiconductor Research Foundation
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation, Stanley Electric Co Ltd filed Critical Semiconductor Research Foundation
Priority to JP1450480A priority Critical patent/JPS56111275A/en
Priority to GB8103499A priority patent/GB2070859B/en
Priority to DE19813104082 priority patent/DE3104082A1/en
Priority to FR8102426A priority patent/FR2475803B1/en
Priority to US06/232,967 priority patent/US4414558A/en
Publication of JPS56111275A publication Critical patent/JPS56111275A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce misfit dislocation and the like on a heteroboundary and improve luminous efficiency by lessening the width of the forbidden band of a P layer constituting a PN junction is comparison with that of an N layer and further by specifying the carrier density of the P and N layers respectively in a GaAlAs heterojunction diode. CONSTITUTION:On a P type GaAs substrate 1 are laminated and grown epitaxially a P type Ga1-xAlxAs layer 2 serving as a luminous part and an N type Ga1-yAl7As layer 3 and to the back surface of the substrate 1 is connected an electrode 4, while also on the central surface of the layer 3 is formed an electrode 5. In such a constitution, the width of the forbidden band of the N type layer 3 through the intermediary of the PN heterojunction is made larger than that of the P type layer 2, and at the same time the carrier density p of the P type layer 2 is set to be 4.5- 10<17>cm<-3p<2.5X10<18>cm<-3> by using Zn impurity, while the density n of the N type layer 3 is also set to be 2X10<17>cm<-3n<1X10<18>cm<-3>. In this way, defects on the hetero-boundary are removed and the luminous efficiency is improved.
JP1450480A 1980-02-07 1980-02-07 Luminous semiconductor device Pending JPS56111275A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1450480A JPS56111275A (en) 1980-02-07 1980-02-07 Luminous semiconductor device
GB8103499A GB2070859B (en) 1980-02-07 1981-02-05 Hetero-junction light-emitting diode
DE19813104082 DE3104082A1 (en) 1980-02-07 1981-02-06 Light-emitting heterojunction diode
FR8102426A FR2475803B1 (en) 1980-02-07 1981-02-06 HETERO-JUNCTION LIGHT EMITTING DIODE
US06/232,967 US4414558A (en) 1980-02-07 1981-02-09 Hetero-junction light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1450480A JPS56111275A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111275A true JPS56111275A (en) 1981-09-02

Family

ID=11862888

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1450480A Pending JPS56111275A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111275A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183977A (en) * 1985-02-08 1986-08-16 Toshiba Corp Light emitting element and manufacture thereof
JPH0348467A (en) * 1989-04-17 1991-03-01 Nec Corp Light emitting diode

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61183977A (en) * 1985-02-08 1986-08-16 Toshiba Corp Light emitting element and manufacture thereof
JPH055191B2 (en) * 1985-02-08 1993-01-21 Tokyo Shibaura Electric Co
JPH0348467A (en) * 1989-04-17 1991-03-01 Nec Corp Light emitting diode

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