JPS56111279A - Luminous semiconductor device - Google Patents

Luminous semiconductor device

Info

Publication number
JPS56111279A
JPS56111279A JP1450880A JP1450880A JPS56111279A JP S56111279 A JPS56111279 A JP S56111279A JP 1450880 A JP1450880 A JP 1450880A JP 1450880 A JP1450880 A JP 1450880A JP S56111279 A JPS56111279 A JP S56111279A
Authority
JP
Japan
Prior art keywords
layer
substrate
type
active layer
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1450880A
Other languages
Japanese (ja)
Inventor
Junichi Nishizawa
Toru Tejima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Research Foundation
Stanley Electric Co Ltd
Original Assignee
Semiconductor Research Foundation
Stanley Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Research Foundation, Stanley Electric Co Ltd filed Critical Semiconductor Research Foundation
Priority to JP1450880A priority Critical patent/JPS56111279A/en
Priority to GB8103499A priority patent/GB2070859B/en
Priority to DE19813104082 priority patent/DE3104082A1/en
Priority to FR8102426A priority patent/FR2475803B1/en
Priority to US06/232,967 priority patent/US4414558A/en
Publication of JPS56111279A publication Critical patent/JPS56111279A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To obtain high luminous efficiency with a simple process by specifying the kind of impurity in a substrate as well as carrier density and composition of the substrate and of an active layer when the luminous semiconductor device is constituted by the p<+> type GaAs substrate, the p type Ga1-xAlxAs active layer and a an n type Ga1-yAlyAs layer. CONSTITUTION:The p type Ga1-xAlxAs active layer 8 and the n type Ga1-y AlyAs layer 9 are laminated and grown on the p type GaAs substrate 7, an electrode 10 is connected to the whole of the back surface of the substrate 7, on the layer 9 is fitted an electrode 11, being positioned on the surface in the central part thereof, and a light 12 is emitted from the active layer 8 through the layer 9. In such a constitution, Zn is used as the impurity of the substrate 7, and when the carrier density of the substrate 7 and of the layer 8 is determined to be p<+> and p, respectively, the relation between them is set to be p<+>>=2.7p, while the composition (x) is selected within the range of 0.3<=x<=0.37. Moreover, the relation of this (x) to (y) of the layer 9 is set to be y>x and thus a grid constant is aligned, whereby defects near the boundary of heterojunction are reduced.
JP1450880A 1980-02-07 1980-02-07 Luminous semiconductor device Pending JPS56111279A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP1450880A JPS56111279A (en) 1980-02-07 1980-02-07 Luminous semiconductor device
GB8103499A GB2070859B (en) 1980-02-07 1981-02-05 Hetero-junction light-emitting diode
DE19813104082 DE3104082A1 (en) 1980-02-07 1981-02-06 Light-emitting heterojunction diode
FR8102426A FR2475803B1 (en) 1980-02-07 1981-02-06 HETERO-JUNCTION LIGHT EMITTING DIODE
US06/232,967 US4414558A (en) 1980-02-07 1981-02-09 Hetero-junction light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1450880A JPS56111279A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Publications (1)

Publication Number Publication Date
JPS56111279A true JPS56111279A (en) 1981-09-02

Family

ID=11863002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1450880A Pending JPS56111279A (en) 1980-02-07 1980-02-07 Luminous semiconductor device

Country Status (1)

Country Link
JP (1) JPS56111279A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50157084A (en) * 1974-05-28 1975-12-18
JPS536591A (en) * 1976-07-07 1978-01-21 Stanley Electric Co Ltd Pattern display light emitting diode and method of producing same

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