JPS56162884A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56162884A
JPS56162884A JP6622880A JP6622880A JPS56162884A JP S56162884 A JPS56162884 A JP S56162884A JP 6622880 A JP6622880 A JP 6622880A JP 6622880 A JP6622880 A JP 6622880A JP S56162884 A JPS56162884 A JP S56162884A
Authority
JP
Japan
Prior art keywords
semiconductor
amorphous
locally
unbalanced coupler
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6622880A
Other languages
Japanese (ja)
Other versions
JPS6331950B2 (en
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP6622880A priority Critical patent/JPS56162884A/en
Publication of JPS56162884A publication Critical patent/JPS56162884A/en
Publication of JPS6331950B2 publication Critical patent/JPS6331950B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table

Landscapes

  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To reduce the density of the unbalanced coupler of an amorphous semiconductor by locally distributing amorphous semiconductor and semiamorphous semiconductor in a semiconductor substrate. CONSTITUTION:An amorphous semiconductor and a semiamorphous semiconductor are locally distributed in a semiconductor substrate. The substrate is amorphous, emits locally a light and simultaneously flows a pulse current, activates the unbalanced coupler by heat in the recombination of the unbalanced coupler of the current caused by the carrier excited by the light, and slightly rearrays it. The semiconductor is made of Si, Ge, GeSix (0<x<1), SiCy (0<y<1), Si3N4-z (0<z<4), and SiO2-w (0<w<2). Thus, the density of the unbalanced coupler of the amorphous semiconductor can be reduced.
JP6622880A 1980-05-19 1980-05-19 Semiconductor device and manufacture thereof Granted JPS56162884A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6622880A JPS56162884A (en) 1980-05-19 1980-05-19 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6622880A JPS56162884A (en) 1980-05-19 1980-05-19 Semiconductor device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS56162884A true JPS56162884A (en) 1981-12-15
JPS6331950B2 JPS6331950B2 (en) 1988-06-27

Family

ID=13309772

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6622880A Granted JPS56162884A (en) 1980-05-19 1980-05-19 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56162884A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0234263U (en) * 1988-08-25 1990-03-05

Also Published As

Publication number Publication date
JPS6331950B2 (en) 1988-06-27

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