JPS57113242A - Marking device for semiconductor wafer - Google Patents
Marking device for semiconductor waferInfo
- Publication number
- JPS57113242A JPS57113242A JP18821280A JP18821280A JPS57113242A JP S57113242 A JPS57113242 A JP S57113242A JP 18821280 A JP18821280 A JP 18821280A JP 18821280 A JP18821280 A JP 18821280A JP S57113242 A JPS57113242 A JP S57113242A
- Authority
- JP
- Japan
- Prior art keywords
- mark
- laser
- emission
- laser mark
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
PURPOSE:To enable the formation of a large and stable laser mark with a low power device by forming a mark by emitting the laser light continuously at least more than twice. CONSTITUTION:A laser mark is formed on the surface of a semiconductor device by emitting first laser light. In other words, the metal wire 1 on the surface of the semiconductor device and a part of an oxidized film 2 are heated and molten by the laser light to form a laser mark. At this time the periphery of the laser mark is not molten, but becomes high temperature. When second emission of the laser mark is performed, a large laser mark 3' is formed. The mark 3' formed by the second emission is much larger than that produced at the first emission and stable.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18821280A JPS57113242A (en) | 1980-12-29 | 1980-12-29 | Marking device for semiconductor wafer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18821280A JPS57113242A (en) | 1980-12-29 | 1980-12-29 | Marking device for semiconductor wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57113242A true JPS57113242A (en) | 1982-07-14 |
Family
ID=16219723
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18821280A Pending JPS57113242A (en) | 1980-12-29 | 1980-12-29 | Marking device for semiconductor wafer |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57113242A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003038895A1 (en) * | 2001-10-30 | 2003-05-08 | Motorola, Inc. | Wafer scribing method and wafer scribing device |
-
1980
- 1980-12-29 JP JP18821280A patent/JPS57113242A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2003038895A1 (en) * | 2001-10-30 | 2003-05-08 | Motorola, Inc. | Wafer scribing method and wafer scribing device |
US6914006B2 (en) | 2001-10-30 | 2005-07-05 | Freescale Semiconductor, Inc. | Wafer scribing method and wafer scribing device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52143755A (en) | Laser, zone melting device | |
JPS57113242A (en) | Marking device for semiconductor wafer | |
JPS5367391A (en) | Semiconductor laser device | |
JPS5299792A (en) | Production of semiconductor light emitting device | |
JPS566480A (en) | Semiconductor light emitting diode | |
JPS5370689A (en) | Semiconductor laser device | |
JPS5416992A (en) | Light emitting diode | |
JPS51149781A (en) | Device for mounting semiconductor laserelement | |
JPS5329687A (en) | Semiconductor light emitting device and its production | |
JPS5391684A (en) | Semiconductor laser | |
JPS5215280A (en) | Cleavage semiconductor laser equipped with side surface light take-out waveguide | |
JPS51132984A (en) | Semiconductor laser device | |
JPS5234685A (en) | Semiconductor luminous element and its manufacturing process | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS5591892A (en) | Semiconductor laser light emission device | |
JPS5367389A (en) | Production of semiconductor laser | |
JPS52130295A (en) | Semiconductor light emitting device | |
JPS572590A (en) | Inp-ingaasp semiconductor light emitting device and manufacture thereof | |
JPS5410689A (en) | Semiconductor laser device and its production | |
JPS537187A (en) | Production of semiconductor laser device | |
JPS5310291A (en) | Production of semiconductor light emitting device | |
JPS5425686A (en) | Semiconductor junction laser | |
JPS52129390A (en) | Production of semiconductor light emitting element | |
JPS5730394A (en) | Semiconductor light emitting device and manufacture thereof | |
JPS56112777A (en) | Semiconductor light emitting device |