JPS5416992A - Light emitting diode - Google Patents
Light emitting diodeInfo
- Publication number
- JPS5416992A JPS5416992A JP8163277A JP8163277A JPS5416992A JP S5416992 A JPS5416992 A JP S5416992A JP 8163277 A JP8163277 A JP 8163277A JP 8163277 A JP8163277 A JP 8163277A JP S5416992 A JPS5416992 A JP S5416992A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting diode
- emitting region
- hole
- vicinity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Led Devices (AREA)
Abstract
PURPOSE: To improve heat radiating characteristic of light emitting region and facilitate integration by providing a hole reaching the vicinity of the light emitting region of a crystal growth layer in a crystal substrate and filling a metal in this hole.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8163277A JPS5416992A (en) | 1977-07-07 | 1977-07-07 | Light emitting diode |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8163277A JPS5416992A (en) | 1977-07-07 | 1977-07-07 | Light emitting diode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5416992A true JPS5416992A (en) | 1979-02-07 |
Family
ID=13751699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8163277A Pending JPS5416992A (en) | 1977-07-07 | 1977-07-07 | Light emitting diode |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5416992A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0256986A (en) * | 1988-08-22 | 1990-02-26 | Nippon Telegr & Teleph Corp <Ntt> | Multibeam semiconductor light-emitting device |
US4928458A (en) * | 1988-06-20 | 1990-05-29 | Honda Giken Kabushiki Kaisha | Engine control device for mower |
JPH05160500A (en) * | 1991-12-03 | 1993-06-25 | Mitsubishi Electric Corp | Semiconductor optical element |
US6982435B2 (en) * | 1999-03-31 | 2006-01-03 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for producing the same |
US9130141B2 (en) | 2012-09-14 | 2015-09-08 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting diode element and light-emitting diode device |
-
1977
- 1977-07-07 JP JP8163277A patent/JPS5416992A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4928458A (en) * | 1988-06-20 | 1990-05-29 | Honda Giken Kabushiki Kaisha | Engine control device for mower |
JPH0256986A (en) * | 1988-08-22 | 1990-02-26 | Nippon Telegr & Teleph Corp <Ntt> | Multibeam semiconductor light-emitting device |
JPH05160500A (en) * | 1991-12-03 | 1993-06-25 | Mitsubishi Electric Corp | Semiconductor optical element |
US6982435B2 (en) * | 1999-03-31 | 2006-01-03 | Toyoda Gosei Co., Ltd. | Group III nitride compound semiconductor device and method for producing the same |
US9130141B2 (en) | 2012-09-14 | 2015-09-08 | Panasonic Intellectual Property Management Co., Ltd. | Light-emitting diode element and light-emitting diode device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5416992A (en) | Light emitting diode | |
JPS549592A (en) | Luminous semiconductor element | |
JPS5437594A (en) | Semiconductor laser and its manufacture | |
JPS5380989A (en) | Light emitting diode | |
JPS5434770A (en) | Semiconductor substrate and manufacture of semiconductor using it | |
JPS5376692A (en) | Semiconductor light emitting device | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS52135692A (en) | Light emitting diode device | |
JPS52130295A (en) | Semiconductor light emitting device | |
JPS53139211A (en) | Manufacturing of light alloy blade | |
JPS5351964A (en) | Selective growth method for semiconductor crystal | |
JPS5329687A (en) | Semiconductor light emitting device and its production | |
JPS5421272A (en) | Metal photo mask | |
JPS5420685A (en) | Light emitting diode | |
JPS5418670A (en) | Manufacture of semiconductor device | |
JPS5254388A (en) | Light emitting diode | |
JPS549590A (en) | Luminous semiconductor element | |
JPS5395570A (en) | Forming method of epitaxial layer | |
JPS53104160A (en) | Impurity diffusing method | |
JPS5351988A (en) | Cap green light emission display unit | |
JPS5427385A (en) | Semiconductor laser | |
JPS542079A (en) | Light emission unit of semiconductor | |
JPS52129389A (en) | Semiconductor light emitting device | |
JPS5388591A (en) | Production of light emitting diode | |
JPS5294069A (en) | Process for preparing semi-conductor substrate |