JPS5434770A - Semiconductor substrate and manufacture of semiconductor using it - Google Patents

Semiconductor substrate and manufacture of semiconductor using it

Info

Publication number
JPS5434770A
JPS5434770A JP10206477A JP10206477A JPS5434770A JP S5434770 A JPS5434770 A JP S5434770A JP 10206477 A JP10206477 A JP 10206477A JP 10206477 A JP10206477 A JP 10206477A JP S5434770 A JPS5434770 A JP S5434770A
Authority
JP
Japan
Prior art keywords
semiconductor
manufacture
semiconductor substrate
buried layer
growth layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10206477A
Other languages
Japanese (ja)
Inventor
Hisashi Sawaki
Yasuo Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10206477A priority Critical patent/JPS5434770A/en
Publication of JPS5434770A publication Critical patent/JPS5434770A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

PURPOSE: To attain accurate positioning by diffusion-forming a high-impurity density buried layer on a semiconductor substrate with at least two display parts displaying a crystal azimuth, by providing a vapor-phase growth layer onto it, and by using the pattern of the growth layer, generated corresponding to the buried layer, as the reference.
COPYRIGHT: (C)1979,JPO&Japio
JP10206477A 1977-08-24 1977-08-24 Semiconductor substrate and manufacture of semiconductor using it Pending JPS5434770A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10206477A JPS5434770A (en) 1977-08-24 1977-08-24 Semiconductor substrate and manufacture of semiconductor using it

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10206477A JPS5434770A (en) 1977-08-24 1977-08-24 Semiconductor substrate and manufacture of semiconductor using it

Publications (1)

Publication Number Publication Date
JPS5434770A true JPS5434770A (en) 1979-03-14

Family

ID=14317326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10206477A Pending JPS5434770A (en) 1977-08-24 1977-08-24 Semiconductor substrate and manufacture of semiconductor using it

Country Status (1)

Country Link
JP (1) JPS5434770A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568817A (en) * 1979-07-04 1981-01-29 Nec Corp Manufacture of semiconductor device
JPS5612745A (en) * 1979-07-10 1981-02-07 Nec Corp Production of semiconductor device
JPS5785227A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of semiconductor device
JPH0344056A (en) * 1989-07-12 1991-02-25 Fujitsu Ltd Manufacture of semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS568817A (en) * 1979-07-04 1981-01-29 Nec Corp Manufacture of semiconductor device
JPS5612745A (en) * 1979-07-10 1981-02-07 Nec Corp Production of semiconductor device
JPS6252454B2 (en) * 1979-07-10 1987-11-05 Nippon Electric Co
JPS5785227A (en) * 1980-11-17 1982-05-27 Toshiba Corp Manufacture of semiconductor device
JPH0344056A (en) * 1989-07-12 1991-02-25 Fujitsu Ltd Manufacture of semiconductor device

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