JPS52143761A - Crystal growth method - Google Patents

Crystal growth method

Info

Publication number
JPS52143761A
JPS52143761A JP6001576A JP6001576A JPS52143761A JP S52143761 A JPS52143761 A JP S52143761A JP 6001576 A JP6001576 A JP 6001576A JP 6001576 A JP6001576 A JP 6001576A JP S52143761 A JPS52143761 A JP S52143761A
Authority
JP
Japan
Prior art keywords
crystal growth
growth method
grating
crystal
eptaxially
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6001576A
Other languages
Japanese (ja)
Inventor
Masatake Kishino
Shinya Iida
Hideo Komatsu
Masahiko Kogirima
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP6001576A priority Critical patent/JPS52143761A/en
Publication of JPS52143761A publication Critical patent/JPS52143761A/en
Pending legal-status Critical Current

Links

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To eptaxially grow satisfactory crystal only on the portions encircled by each grating by covering part of substrate crystal in grating form with an insulator, etc.
COPYRIGHT: (C)1977,JPO&Japio
JP6001576A 1976-05-26 1976-05-26 Crystal growth method Pending JPS52143761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6001576A JPS52143761A (en) 1976-05-26 1976-05-26 Crystal growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6001576A JPS52143761A (en) 1976-05-26 1976-05-26 Crystal growth method

Publications (1)

Publication Number Publication Date
JPS52143761A true JPS52143761A (en) 1977-11-30

Family

ID=13129805

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6001576A Pending JPS52143761A (en) 1976-05-26 1976-05-26 Crystal growth method

Country Status (1)

Country Link
JP (1) JPS52143761A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167028A (en) * 1983-03-11 1984-09-20 Mitsubishi Electric Corp Manufacture of compound semiconductor integrated circuit device
JPS6325295A (en) * 1986-07-16 1988-02-02 Hitachi Cable Ltd Semiconductor epitaxial wafer
JPS6453411A (en) * 1987-05-20 1989-03-01 Nec Corp Manufacture of semiconductor thin film
WO1990011391A1 (en) * 1989-03-17 1990-10-04 Sumitomo Electric Industries, Ltd. Wafer of compound semiconductor
US5212394A (en) * 1989-03-17 1993-05-18 Sumitomo Electric Industries, Ltd. Compound semiconductor wafer with defects propagating prevention means

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59167028A (en) * 1983-03-11 1984-09-20 Mitsubishi Electric Corp Manufacture of compound semiconductor integrated circuit device
JPS6325295A (en) * 1986-07-16 1988-02-02 Hitachi Cable Ltd Semiconductor epitaxial wafer
JPS6453411A (en) * 1987-05-20 1989-03-01 Nec Corp Manufacture of semiconductor thin film
WO1990011391A1 (en) * 1989-03-17 1990-10-04 Sumitomo Electric Industries, Ltd. Wafer of compound semiconductor
US5212394A (en) * 1989-03-17 1993-05-18 Sumitomo Electric Industries, Ltd. Compound semiconductor wafer with defects propagating prevention means

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