JPS5627981A - Light emitting semiconductor device - Google Patents

Light emitting semiconductor device

Info

Publication number
JPS5627981A
JPS5627981A JP10400279A JP10400279A JPS5627981A JP S5627981 A JPS5627981 A JP S5627981A JP 10400279 A JP10400279 A JP 10400279A JP 10400279 A JP10400279 A JP 10400279A JP S5627981 A JPS5627981 A JP S5627981A
Authority
JP
Japan
Prior art keywords
light emitting
semiconductor device
emitting semiconductor
chalcogenide glass
semispherical shape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10400279A
Other languages
Japanese (ja)
Other versions
JPS6222479B2 (en
Inventor
Makoto Morioka
Hisatoshi Uchida
Juichi Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10400279A priority Critical patent/JPS5627981A/en
Publication of JPS5627981A publication Critical patent/JPS5627981A/en
Publication of JPS6222479B2 publication Critical patent/JPS6222479B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To facilitate an easy fabrication of the light emitting semiconductor device and to improve the light emitting efficiency of the semiconductor device by coating chalcogenide glass through amorphous silicon film on a light emitting surface in semispherical shape. CONSTITUTION:An amorphous silicon film 9 is coated on the light emitting surface of a light emitting element by a sputtering or glowing means, and chalcogenide glass 10 such as As2S3 or the like is coated further thereon by a method of dropping in semispherical shape in the state of coating a light emitting semiconductor chip 1. The chalcogenide glass 10 has excellent improvement in emitting the light, and facilitates an easy fabrication of semispherical shape thereon.
JP10400279A 1979-08-17 1979-08-17 Light emitting semiconductor device Granted JPS5627981A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10400279A JPS5627981A (en) 1979-08-17 1979-08-17 Light emitting semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10400279A JPS5627981A (en) 1979-08-17 1979-08-17 Light emitting semiconductor device

Publications (2)

Publication Number Publication Date
JPS5627981A true JPS5627981A (en) 1981-03-18
JPS6222479B2 JPS6222479B2 (en) 1987-05-18

Family

ID=14369065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10400279A Granted JPS5627981A (en) 1979-08-17 1979-08-17 Light emitting semiconductor device

Country Status (1)

Country Link
JP (1) JPS5627981A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0679163U (en) * 1993-04-21 1994-11-04 有限会社シマテック LED lamps and stable illuminators
US5468683A (en) * 1992-09-25 1995-11-21 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces
JP2001102639A (en) * 1999-09-30 2001-04-13 Sumitomo 3M Ltd Light-emitting diode and laser diode device sealed with fluoropolymer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468683A (en) * 1992-09-25 1995-11-21 U.S. Philips Corporation Method of manufacturing an optoelectronic semiconductor device having a single wire between non-parallel surfaces
JPH0679163U (en) * 1993-04-21 1994-11-04 有限会社シマテック LED lamps and stable illuminators
JP2001102639A (en) * 1999-09-30 2001-04-13 Sumitomo 3M Ltd Light-emitting diode and laser diode device sealed with fluoropolymer

Also Published As

Publication number Publication date
JPS6222479B2 (en) 1987-05-18

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