JP2001102639A - Light-emitting diode and laser diode device sealed with fluoropolymer - Google Patents
Light-emitting diode and laser diode device sealed with fluoropolymerInfo
- Publication number
- JP2001102639A JP2001102639A JP27836399A JP27836399A JP2001102639A JP 2001102639 A JP2001102639 A JP 2001102639A JP 27836399 A JP27836399 A JP 27836399A JP 27836399 A JP27836399 A JP 27836399A JP 2001102639 A JP2001102639 A JP 2001102639A
- Authority
- JP
- Japan
- Prior art keywords
- laser diode
- light
- emitting diode
- fluoropolymer
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、発光ダイオード
（ＬＥＤ）およびレーザーダイオード等のエネルギーを
発するダイオードチップを含む装置において、ダイオー
ドチップをフッ素ポリマーにより封止した装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device including an energy-emitting diode chip such as a light emitting diode (LED) and a laser diode, wherein the diode chip is sealed with a fluoropolymer.
【０００２】[0002]
【従来の技術】発光ダイオード（ＬＥＤ）およびレーザ
ーダイオード装置の基本構造は電極や反射機構などをも
つ基板部分、その上に発光素子などを含むダイオードチ
ップおよびそれらの構造体や回路を水分および空気から
保護するための封止材からなる。これらの装置のための
封止材には素子を外界の水や酸素などの劣化因子から遮
断するために一般にエポキシ樹脂が用いられている。従
って、これらの装置の寿命はエポキシ樹脂の劣化の程度
に左右される。最近になって、青色ＬＥＤの開発に伴
い、画像形成を目的とする多色ディスプレイ用に光の３
原色となる赤色、緑色および青色のＬＥＤが応用される
ようになってきている。このように、青色のＬＥＤやレ
ーザーダイオードの需要が増加しているが、これらの装
置はエネルギーの強い短波長の光を発光するためにエポ
キシ樹脂系封止材は短時間で劣化し、その結果、クラッ
クが発生し、このクラック部分から水や空気等が浸入す
るために機能が損なわれるという問題が生じている。2. Description of the Related Art The basic structure of a light emitting diode (LED) and a laser diode device is as follows: a substrate portion having electrodes and a reflection mechanism, a diode chip including a light emitting element and the like, and a structure and a circuit thereof from moisture and air. It consists of a sealing material for protection. Epoxy resin is generally used as a sealing material for these devices in order to shield the element from deterioration factors such as external water and oxygen. Therefore, the life of these devices depends on the degree of degradation of the epoxy resin. Recently, with the development of the blue LED, light 3 is used for multi-color displays for image formation.
Red, green and blue LEDs, which are primary colors, have been applied. As described above, the demand for blue LEDs and laser diodes is increasing. However, since these devices emit short-wavelength light with high energy, the epoxy resin-based sealing material deteriorates in a short time, and as a result, This causes a problem that cracks are generated, and water, air, and the like intrude from the cracks, thereby impairing the function.
【０００３】このような問題を解決する手段として、特
開平１０−５６２３８号公報には、レーザーダイオード
チップの発光端面近傍においてエポキシ樹脂封止材がレ
ーザー光により破壊されるのを防止するために、シリコ
ーン樹脂からなる端面破壊防止層が配置された半導体レ
ーザー装置が開示されている。しかしながら、シリコー
ン樹脂は他の部品との接着性が低く、剥離の問題があ
り、また、耐油性が極めて低いという問題がある。As a means for solving such a problem, Japanese Patent Application Laid-Open No. H10-56238 discloses a method for preventing an epoxy resin sealing material from being destroyed by laser light near a light emitting end face of a laser diode chip. A semiconductor laser device provided with an end face destruction prevention layer made of a silicone resin is disclosed. However, the silicone resin has low adhesion to other parts, has a problem of peeling, and has a problem of extremely low oil resistance.
【０００４】[0004]
【発明が解決しようとする課題】本発明の目的は従来の
エポキシ樹脂系封止材に代わる新規の封止材により封止
した発光ダイオードおよびレーザーダイオード装置を提
供することである。SUMMARY OF THE INVENTION It is an object of the present invention to provide a light emitting diode and a laser diode device sealed with a novel sealing material which replaces the conventional epoxy resin type sealing material.
【０００５】[0005]
【課題を解決するための手段】本発明によると、発光ダ
イオードもしくはレーザーダイオードチップを含む発光
ダイオードもしくはレーザーダイオード装置において、
前記チップをテトラフルオロエチレン（ＴＦＥ）、ヘキ
サフルオロプロピレン（ＨＦＰ）およびビニリデンフル
オライド（ＶｄＦ）を主成分とした三元系フッ素ポリマ
ーまたはテトラフルオロエチレン（ＴＦＥ）およびビニ
リデンフルオライド（ＶｄＦ）を主成分とした二元系フ
ッ素ポリマーにより封止したことを特徴とする発光ダイ
オードもしくはレーザーダイオード装置が提供される。According to the present invention, in a light emitting diode or laser diode device including a light emitting diode or laser diode chip,
A ternary fluoropolymer containing tetrafluoroethylene (TFE), hexafluoropropylene (HFP) and vinylidene fluoride (VdF) as main components or tetrafluoroethylene (TFE) and vinylidene fluoride (VdF) as main components A light emitting diode or a laser diode device characterized by being sealed with a binary fluoropolymer described above.
【０００６】[0006]
【発明の実施の形態】本発明の発光ダイオード装置
（１）またはレーザーダイオード装置（１’）は、それ
ぞれ、図１（ａ）および（ｂ）に示すように、発光ダイ
オードチップ（２）またはレーザーダイオードチップ
（２’）および封止材（３）または（３’）を含む。DESCRIPTION OF THE PREFERRED EMBODIMENTS A light emitting diode device (1) or a laser diode device (1 ') according to the present invention comprises a light emitting diode chip (2) or a laser diode device as shown in FIGS. Includes a diode chip (2 ') and a sealing material (3) or (3').
【０００７】本発明に用いる封止材は、テトラフルオロ
エチレン（ＴＦＥ）、ヘキサフルオロプロピレン（ＨＦ
Ｐ）およびビニリデンフルオライド（ＶｄＦ）を主成分
とした三元系フッ素ポリマーであるか、またはテトラフ
ルオロエチレン（ＴＦＥ）およびビニリデンフルオライ
ド（ＶｄＦ）を主成分とした二元系ポリマーである。好
ましくは、封止材はこれらのモノマー単位からなる三元
系もしくは二元系フッ素ポリマーである。このようなフ
ッ素ポリマーは、従来のエポキシ樹脂系封止材と比べ
て、耐光性および耐候性に優れるという利点を有する。
特に、エネルギーの高い短波長の光を発光する青色発光
ダイオードおよびレーザーダイオード装置にとって、耐
光性は特に重要な特性である。The sealing material used in the present invention is tetrafluoroethylene (TFE), hexafluoropropylene (HF).
It is a ternary fluoropolymer containing P) and vinylidene fluoride (VdF) as main components, or a binary polymer containing tetrafluoroethylene (TFE) and vinylidene fluoride (VdF) as main components. Preferably, the encapsulant is a ternary or binary fluoropolymer composed of these monomer units. Such a fluoropolymer has an advantage of being excellent in light resistance and weather resistance as compared with a conventional epoxy resin-based sealing material.
In particular, light resistance is a particularly important property for blue light emitting diodes and laser diode devices that emit short-wavelength light with high energy.
【０００８】図２を参照すると、フッ素ポリマーのＴＦ
Ｅ、ＨＦＰおよびＶｄＦの組成比を示す図面が記載され
ている。封止材としては、流動性がよく、加工性がよ
く、そして水分等の透過性が低いものが望まれ、この為
には、結晶性で、融点を有するものが好ましい。また、
ダイオードチップから放出される光の強度を維持するた
めに光透過性も重要である。このような観点から、テト
ラフルオロエチレン（ＴＦＥ）３６〜７２重量％、ヘキ
サフルオロプロピレン（ＨＦＰ）０〜５６重量％、ビニ
リデンフルオライド（ＶｄＦ）８〜４５重量％の組成比
からなるフッ素ポリマーが最適である。図２中の斜線部
分はゴム弾性領域であり、従って、上記の特性に劣るの
で望ましくない。また、それぞれのモノマーの含有分が
極端に高い場合には、即ち、図２の頂点付近の場合に
は、樹脂性が高く、柔軟性に欠けるため好ましくない。
特に、ＴＦＥが含有分が高いと乳白色となり、透明性に
劣る。上記の最適組成比からなるポリマーはＰＴＦＥと
同様の耐薬品性を維持し、しかも、フッ素ゴムでは得ら
れない３０％前後の結晶性をもった低物質透過性を有
し、さらに、ある程度の柔軟性を有するという利点があ
る。Referring to FIG. 2, the fluoropolymer TF
A drawing showing the composition ratio of E, HFP and VdF is described. As the sealing material, a material having good fluidity, good workability, and low permeability to moisture or the like is desired. For this purpose, a material having a crystalline property and a melting point is preferable. Also,
Light transmission is also important to maintain the intensity of light emitted from the diode chip. From such a viewpoint, a fluoropolymer having a composition ratio of 36 to 72% by weight of tetrafluoroethylene (TFE), 0 to 56% by weight of hexafluoropropylene (HFP), and 8 to 45% by weight of vinylidene fluoride (VdF) is most suitable. It is. The hatched portion in FIG. 2 is a rubber elastic region, which is not desirable because it is inferior in the above characteristics. In addition, when the content of each monomer is extremely high, that is, in the vicinity of the top of FIG. 2, the resinity is high and the flexibility is poor, which is not preferable.
In particular, when the content of TFE is high, it becomes milky white and is inferior in transparency. The polymer having the above-mentioned optimum composition ratio maintains the same chemical resistance as PTFE, has a low material permeability with crystallinity of about 30% which cannot be obtained with fluororubber, and has a certain degree of flexibility. There is an advantage of having the property.
【０００９】以下に、テトラフルオロエチレン（ＴＦ
Ｅ）３６〜７２重量％、ヘキサフルオロプロピレン（Ｈ
ＦＰ）０〜５６重量％、ビニリデンフルオライド（Ｖｄ
Ｆ）８〜４５重量％の組成比からなるフッ素ポリマー
（ＴＨＶ）と、汎用フッ素樹脂との特性を比較した表を
示す。特性 THV PTFE PFA FEP PVdF ETFE 耐光性 優 優 優 優 優 優 耐候性 優 優 優 優 優 優 光透過性 優 不可 良 良 優 優 加工性（融点） 優 不可 可 可 良 良 (120〜180 ℃) (327℃) (300℃) (300℃) (180℃) (260℃) 接着性 優 可 可 可 良 良 注) 評価基準 : 優＞良＞可＞不可 ＴＨＶ：本発明のフッ素ポリマー ＰＴＦＥ：ポリテトラフルオロエチレン ＰＦＡ：パーフルオロアルキル変性ＰＴＦＥ ＦＥＰ：テトラフルオロエチレンとヘキサフルオロプロピレンとの共重合体 ＰＶｄＦ：ポリビニリデンフルオライド ＥＴＦＥ：エチレンとテトラフルオロエチレンとの共重合体Hereinafter, tetrafluoroethylene (TF)
E) 36-72% by weight of hexafluoropropylene (H
FP) 0-56% by weight, vinylidene fluoride (Vd
F) A table comparing the properties of a fluoropolymer (THV) having a composition ratio of 8 to 45% by weight with general-purpose fluororesins is shown. Characteristics THV PTFE PFA FEP PVdF ETFE Light resistance Excellent Excellent Excellent Excellent Excellent Excellent Weather resistance Excellent Excellent Excellent Excellent Excellent Excellent Light transmittance Excellent Not possible Excellent Good Excellent Excellent Workability (melting point) Excellent Not possible Possible Possible Good (120-180 ° C) (327 ° C) (300 ° C) (300 ° C) (180 ° C) (260 ° C) Adhesive excellent good good good good good Note) Evaluation criteria: good>good>good> not possible THV: Fluoropolymer of the present invention PTFE: polytetra Fluoroethylene PFA: Perfluoroalkyl-modified PTFE FEP: Copolymer of tetrafluoroethylene and hexafluoropropylene PVdF: Polyvinylidene fluoride ETFE: Copolymer of ethylene and tetrafluoroethylene
【００１０】さらに、本発明のＴＨＶと従来のエポキシ
樹脂との特性比較を下記に示す。特性 ＴＨＶ エポキシ樹脂 耐光性 優 良 耐候性 優 可 光透過性 優 良 耐水・耐湿性 優 良 加工性 優 良 接着性 優 優Further, a comparison of properties between the THV of the present invention and a conventional epoxy resin is shown below. Properties THV Epoxy resin Light resistance Excellent Excellent Weather resistance Excellent Possible Light transmissivity Excellent Water and moisture resistance Excellent Workability Excellent Adhesive Excellent
【００１１】[0011]
【実施例】フッ素ポリマーとしてダニオン社製の三元系
フッ素樹脂（ＴＨＶ５００）を用いて耐光性の評価を行
った。このポリマーはテトラフルオロエチレン（ＴＦ
Ｅ）５８重量％、ヘキサフルオロプロピレン（ＨＦＰ）
２０重量％およびビニリデンフルオリド（ＶｄＦ）２２
重量％の組成比からなるフッ素ポリマーである。このポ
リマーを押出成形して１００μｍの厚さのフィルムを得
た。紫外・可視分光分析により、３００〜１８００ｎｍ
の波長の光を透過させたときの透過率を測定した（未処
理試料）。その後、Ｑ−Ｕ−Ｖ促進耐候試験機（ＴＨＥ
Ｑ−ＰＡＮＥＬ ＣＯＭＰＡＮＹ製）を用いて３１３
ｎｍおよび３５１ｎｍの波長の紫外線を１５００時間照
射した後に、再度、光透過率を測定した。その結果を図
３に示す。未処理の試料および紫外線（３１３ｎｍおよ
び３５１ｎｍ）照射処理後の試料は、図３に示すよう
な、ほぼ同一の透過率を示した。図から明らかな通り、
本発明のフッ素ポリマーは光透過率が高く、また、紫外
線処理の前後で透過率が変化しないことから、耐光性も
高いことが判った。EXAMPLE Light resistance was evaluated using a ternary fluororesin (THV500) manufactured by Danion Co. as a fluoropolymer. This polymer is tetrafluoroethylene (TF
E) 58% by weight of hexafluoropropylene (HFP)
20% by weight and vinylidene fluoride (VdF) 22
It is a fluoropolymer having a composition ratio of weight%. This polymer was extruded to obtain a film having a thickness of 100 μm. 300-1800 nm by UV / Visible spectroscopy
The transmittance at the time of transmitting the light of the wavelength of was measured (untreated sample). Thereafter, a QUV accelerated weathering tester (THE
313 using Q-PANEL COMPANY)
After irradiating ultraviolet rays having wavelengths of 351 nm and 351 nm for 1500 hours, the light transmittance was measured again. The result is shown in FIG. The untreated sample and the sample after the irradiation treatment with ultraviolet rays (313 nm and 351 nm) showed almost the same transmittance as shown in FIG. As is clear from the figure,
Since the fluoropolymer of the present invention has a high light transmittance and the transmittance does not change before and after the ultraviolet treatment, it was found that the light resistance was high.
【００１２】[0012]
【発明の効果】本発明の発光ダイオードおよびレーザー
ダイオード装置は、優れた特性、特に高い耐光性のフッ
素ポリマーを封止材として用いているため、従来のエポ
キシ樹脂系封止材により封止された装置よりも長い寿命
を有する。The light emitting diode and the laser diode device of the present invention are sealed with a conventional epoxy resin-based sealing material because they use a fluoropolymer having excellent characteristics, especially high light resistance, as a sealing material. Has a longer lifespan than the device.
【図１】発光ダイオード装置（ａ）およびレーザーダイ
オード装置（ｂ）の略図を示す。FIG. 1 shows a schematic diagram of a light emitting diode device (a) and a laser diode device (b).
【図２】本発明の装置に用いるフッ素ポリマーのＴＦ
Ｅ、ＨＦＰおよびＶｄＦの組成比を表す図面である。FIG. 2 TF of a fluoropolymer used in the apparatus of the present invention
3 is a drawing showing a composition ratio of E, HFP and VdF.
【図３】本発明の装置の封止に用いるフッ素ポリマーの
光透過率を示すグラフである。FIG. 3 is a graph showing the light transmittance of a fluoropolymer used for sealing the device of the present invention.
１…発光ダイオード装置 １’…レーザーダイオード装置 ２…発光ダイオードチップ ２’…レーザーダイオードチップ ３，３’…封止材 DESCRIPTION OF SYMBOLS 1 ... Light emitting diode device 1 '... Laser diode device 2 ... Light emitting diode chip 2' ... Laser diode chip 3, 3 '... Sealing material
───────────────────────────────────────────────────── フロントページの続き (72)発明者 南 和彦 神奈川県相模原市南橋本３−８−８ 住友 スリーエム株式会社内 Ｆターム(参考） 4M109 AA01 BA01 BA07 CA01 CA05 DA02 DA07 EA11 EC02 EC11 EC15 GA01 5F041 AA34 AA43 DA12 DA46 DB01 DB02 FF01 5F073 BA09 DA35 EA28 FA29 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Kazuhiko Minami 3-8-8 Minamihashimoto, Sagamihara-shi, Kanagawa F-term in Sumitomo 3M Limited (Reference) 4M109 AA01 BA01 BA07 CA01 CA05 DA02 DA07 EA11 EC02 EC11 EC15 GA01 5F041 AA34 AA43 DA12 DA46 DB01 DB02 FF01 5F073 BA09 DA35 EA28 FA29
Claims (2)
ードチップを含む発光ダイオードもしくはレーザーダイ
オード装置において、前記チップをテトラフルオロエチ
レン（ＴＦＥ）、ヘキサフルオロプロピレン（ＨＦＰ）
およびビニリデンフルオライド（ＶｄＦ）を主成分とし
た三元系フッ素ポリマーまたはテトラフルオロエチレン
（ＴＦＥ）およびビニリデンフルオライド（ＶｄＦ）を
主成分とした二元系フッ素ポリマーにより封止したこと
を特徴とする発光ダイオードもしくはレーザーダイオー
ド装置。1. A light emitting diode or laser diode device including a light emitting diode or laser diode chip, wherein said chip is made of tetrafluoroethylene (TFE), hexafluoropropylene (HFP).
And a ternary fluoropolymer mainly composed of vinylidene fluoride (VdF) or a binary fluoropolymer mainly composed of tetrafluoroethylene (TFE) and vinylidene fluoride (VdF). Light emitting diode or laser diode device.
チレン（ＴＦＥ）３６〜７２重量％、ヘキサフルオロプ
ロピレン（ＨＦＰ）０〜５６重量％およびビニリデンフ
ルオライド（ＶｄＦ）８〜４５重量％の組成比からなる
フッ素化ポリマーであることを特徴とする、請求項１記
載の発光ダイオードもしくはレーザーダイオード装置。2. The fluorine polymer having a composition ratio of 36 to 72% by weight of tetrafluoroethylene (TFE), 0 to 56% by weight of hexafluoropropylene (HFP) and 8 to 45% by weight of vinylidene fluoride (VdF). 2. The light emitting diode or laser diode device according to claim 1, wherein the device is an activated polymer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27836399A JP2001102639A (en) | 1999-09-30 | 1999-09-30 | Light-emitting diode and laser diode device sealed with fluoropolymer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27836399A JP2001102639A (en) | 1999-09-30 | 1999-09-30 | Light-emitting diode and laser diode device sealed with fluoropolymer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JP2001102639A true JP2001102639A (en) | 2001-04-13 |
Family
ID=17596311
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27836399A Pending JP2001102639A (en) | 1999-09-30 | 1999-09-30 | Light-emitting diode and laser diode device sealed with fluoropolymer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2001102639A (en) |
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|---|---|---|---|---|
| JP2004088004A (en) * | 2002-08-29 | 2004-03-18 | Okaya Electric Ind Co Ltd | Light emitting diode |
| JP2005026302A (en) * | 2003-06-30 | 2005-01-27 | Shin Etsu Handotai Co Ltd | Luminescent module |
| JP2006348088A (en) * | 2005-06-14 | 2006-12-28 | Denki Kagaku Kogyo Kk | Fluorescent material composition and use thereof |
| JP2009231510A (en) * | 2008-03-21 | 2009-10-08 | Toshiba Lighting & Technology Corp | Lighting system |
| US8497623B2 (en) | 2005-06-14 | 2013-07-30 | Denki Kagaku Kogyo Kabushiki Kaisha | Phosphor-containing resin composition and sheet, and light emitting devices employing them |
| JP2020025089A (en) * | 2018-07-27 | 2020-02-13 | 住友化学株式会社 | Led device, manufacturing method thereof, and laminate |
| WO2020230715A1 (en) * | 2019-05-16 | 2020-11-19 | 住友化学株式会社 | Electronic component and method for manufacturing same |
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| JP2006348088A (en) * | 2005-06-14 | 2006-12-28 | Denki Kagaku Kogyo Kk | Fluorescent material composition and use thereof |
| US8497623B2 (en) | 2005-06-14 | 2013-07-30 | Denki Kagaku Kogyo Kabushiki Kaisha | Phosphor-containing resin composition and sheet, and light emitting devices employing them |
| JP2009231510A (en) * | 2008-03-21 | 2009-10-08 | Toshiba Lighting & Technology Corp | Lighting system |
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