JPS5415687A - Manufacture of semiconductor optical device - Google Patents

Manufacture of semiconductor optical device

Info

Publication number
JPS5415687A
JPS5415687A JP7983178A JP7983178A JPS5415687A JP S5415687 A JPS5415687 A JP S5415687A JP 7983178 A JP7983178 A JP 7983178A JP 7983178 A JP7983178 A JP 7983178A JP S5415687 A JPS5415687 A JP S5415687A
Authority
JP
Japan
Prior art keywords
manufacture
optical device
semiconductor optical
gas
gacl
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7983178A
Other languages
Japanese (ja)
Other versions
JPS5412795B2 (en
Inventor
Goji Kawakami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP7983178A priority Critical patent/JPS5415687A/en
Publication of JPS5415687A publication Critical patent/JPS5415687A/en
Publication of JPS5412795B2 publication Critical patent/JPS5412795B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To manufacture a compound semiconductor optical device featuring a high crystalline performance through a simple way, by making use of the concave or convex artificial buried layer formed on the substrate surface in an atmosphere of H2 gas with GaCl3 gas mixed in.
COPYRIGHT: (C)1979,JPO&Japio
JP7983178A 1978-07-03 1978-07-03 Manufacture of semiconductor optical device Granted JPS5415687A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7983178A JPS5415687A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor optical device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7983178A JPS5415687A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor optical device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP6626675A Division JPS51142281A (en) 1975-06-02 1975-06-02 Method of manufacturing light emitting diode

Publications (2)

Publication Number Publication Date
JPS5415687A true JPS5415687A (en) 1979-02-05
JPS5412795B2 JPS5412795B2 (en) 1979-05-25

Family

ID=13701144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7983178A Granted JPS5415687A (en) 1978-07-03 1978-07-03 Manufacture of semiconductor optical device

Country Status (1)

Country Link
JP (1) JPS5415687A (en)

Also Published As

Publication number Publication date
JPS5412795B2 (en) 1979-05-25

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