JPS56157077A - Semiconductor light emitting device - Google Patents

Semiconductor light emitting device

Info

Publication number
JPS56157077A
JPS56157077A JP6085580A JP6085580A JPS56157077A JP S56157077 A JPS56157077 A JP S56157077A JP 6085580 A JP6085580 A JP 6085580A JP 6085580 A JP6085580 A JP 6085580A JP S56157077 A JPS56157077 A JP S56157077A
Authority
JP
Japan
Prior art keywords
layer
junction
light emitting
emitting device
xalxas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6085580A
Other languages
Japanese (ja)
Inventor
Osamu Ueda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6085580A priority Critical patent/JPS56157077A/en
Publication of JPS56157077A publication Critical patent/JPS56157077A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To widen a luminescence wavelength region and radiate the light in uniform intensity by continuously changing a composition of an epitaxial growth layer of a compound semiconductor composed of at least three kinds of constituent elements. CONSTITUTION:An N type Ga1-xAlxAs layer 2 is epitaxially grown on an N type GaAs substrate 1 and a hole 3 in hemispherical surface-shape is formed in the layer 2. A P-N junction 4 is constructed in the hole 3 and the P-N junction 4 is made a luminous part (active layer). The Ga1-xAlxAs layer is a layer which the values of (x) clanges from 0.4 to 0.18 from the contact surface of the layer 2 with the GaAs substrate 1 toward the upper layer. Electrode layers 5, 6 are mounted on both sides 1, 2.
JP6085580A 1980-05-08 1980-05-08 Semiconductor light emitting device Pending JPS56157077A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6085580A JPS56157077A (en) 1980-05-08 1980-05-08 Semiconductor light emitting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6085580A JPS56157077A (en) 1980-05-08 1980-05-08 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JPS56157077A true JPS56157077A (en) 1981-12-04

Family

ID=13154407

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6085580A Pending JPS56157077A (en) 1980-05-08 1980-05-08 Semiconductor light emitting device

Country Status (1)

Country Link
JP (1) JPS56157077A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924383A (en) * 1982-07-29 1984-02-08 Nippon Denso Co Ltd Optical information reader
FR2592227A1 (en) * 1985-12-24 1987-06-26 Fumio Inaba DIRECTIONAL TYPE SEMICONDUCTOR PHOTOEMISSITIVE DEVICE

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924383A (en) * 1982-07-29 1984-02-08 Nippon Denso Co Ltd Optical information reader
JPS6217270B2 (en) * 1982-07-29 1987-04-16 Nippon Denso Co
FR2592227A1 (en) * 1985-12-24 1987-06-26 Fumio Inaba DIRECTIONAL TYPE SEMICONDUCTOR PHOTOEMISSITIVE DEVICE

Similar Documents

Publication Publication Date Title
KR100707218B1 (en) Scalable led with improved current spreading structures
US5565694A (en) Light emitting diode with current blocking layer
JPS56157077A (en) Semiconductor light emitting device
JPS54152878A (en) Structure of semiconductor laser element and its manufacture
TW364215B (en) Epitaxial wafer and manufacturing method thereof as well as light-emitting diode with enhanced luminance
JPS57111076A (en) Semiconductor light-emitting device
JPS5574190A (en) Photoelectro-converting semiconductor device
US4041516A (en) High intensity light-emitting diode
GB2315920A (en) Infra-red led
JPS5779683A (en) Narrow spectrum type light emitting diode
JPS5696881A (en) Light emitting diode
JPS5563887A (en) Light-emitting diode
JPS5418691A (en) Manufacture of pn-junction type light emitting diode
JPS5775471A (en) Light emitting diode
JPH01137679A (en) Semiconductor light emitting element
JPS57111077A (en) Luminous surface type semiconductor light-emitting element formed on insulating substrate
JPS5565483A (en) Manufacture of semiconductor light emitting element
JPS62250679A (en) Light-emitting diode
JPS57103374A (en) High-brightness light emitting diode
JPS56112770A (en) Light emitting semiconductor device
JPS55113385A (en) Solid light emitting element
JPS5660076A (en) Gallium nitride light emitting element and manufacture thereof
JPS54152485A (en) Electrode forming method for gallium phosphide light- emitting diode
GB1392955A (en) Light emitting diode
JPS5728371A (en) Multicolored light emitting semiconductor device and its manufacture