JPS57103374A - High-brightness light emitting diode - Google Patents

High-brightness light emitting diode

Info

Publication number
JPS57103374A
JPS57103374A JP17880480A JP17880480A JPS57103374A JP S57103374 A JPS57103374 A JP S57103374A JP 17880480 A JP17880480 A JP 17880480A JP 17880480 A JP17880480 A JP 17880480A JP S57103374 A JPS57103374 A JP S57103374A
Authority
JP
Japan
Prior art keywords
electrode
layer
side electrode
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17880480A
Other languages
Japanese (ja)
Inventor
Takashi Ushikubo
Nozomi Watanabe
Yoshio Kawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP17880480A priority Critical patent/JPS57103374A/en
Publication of JPS57103374A publication Critical patent/JPS57103374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To obtain LED of high brightness by providing an N side electrode on one surface of an N type semiconductor substrate and by forming a P side electrode having a V shaped section on a P type diffusion layer on the other surface thereof. CONSTITUTION:A P layer 22 is diffused on one surface an N type GaP substrate 21 and the N side electrode 23 is provided on the other surface thereof, while the P side electrode 24 is provided in a prescribed place of the P layer 22. The electrode 24 is made to have a V shaped section and thus the area thereof is enlarged, whereby the current capacity is increaed. Therefore, the brightness cab be increased. Accordingly, it becomes possible to reduce the current density at the junction part of the electrode 24 to lower the temperature and thereby to prolong considerably the lifetime of LED. In addition, the electrode 24 is lowered below the surface of the P layer 22, whereby the strength thereof in relation to the friction at the surface is increased.
JP17880480A 1980-12-19 1980-12-19 High-brightness light emitting diode Pending JPS57103374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17880480A JPS57103374A (en) 1980-12-19 1980-12-19 High-brightness light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17880480A JPS57103374A (en) 1980-12-19 1980-12-19 High-brightness light emitting diode

Publications (1)

Publication Number Publication Date
JPS57103374A true JPS57103374A (en) 1982-06-26

Family

ID=16054936

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17880480A Pending JPS57103374A (en) 1980-12-19 1980-12-19 High-brightness light emitting diode

Country Status (1)

Country Link
JP (1) JPS57103374A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252180A (en) * 1986-04-24 1987-11-02 Mitsubishi Cable Ind Ltd Semiconductor element

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62252180A (en) * 1986-04-24 1987-11-02 Mitsubishi Cable Ind Ltd Semiconductor element

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