JPS5793589A - Gap light emitting diode - Google Patents

Gap light emitting diode

Info

Publication number
JPS5793589A
JPS5793589A JP17014180A JP17014180A JPS5793589A JP S5793589 A JPS5793589 A JP S5793589A JP 17014180 A JP17014180 A JP 17014180A JP 17014180 A JP17014180 A JP 17014180A JP S5793589 A JPS5793589 A JP S5793589A
Authority
JP
Japan
Prior art keywords
type region
layer
density
light emitting
emitting diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17014180A
Other languages
Japanese (ja)
Other versions
JPS6244835B2 (en
Inventor
Junichi Nishizawa
Ken Sudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP17014180A priority Critical patent/JPS5793589A/en
Publication of JPS5793589A publication Critical patent/JPS5793589A/en
Publication of JPS6244835B2 publication Critical patent/JPS6244835B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To improve the intensity of a light emitting diode by forming a P-N junction having a carrier density rho of a P type region larger than the carrier density n of an N type region and specifying the doner impurity density doped in the P type region to a specific range. CONSTITUTION:A P-N junction having a carrier density n of an N type region larger than the carrier density rho of a P type region is formed, and a doner impurity density ND2 doped in the P type region is set to a range of 1X10<16>/cm<3= ND2<=3X10<17>/cm<3>. For example, when the first layer having a doner impurity density ND1 for determining the conductive type and the second layer 2 having doner impurity density ND2 adjacent to the first layer and an accepter impurity density NA2 are formed, ND1>NA2- ND2>0 and 1X10<16>/cm<3=ND2<=3X 10<17>/cm<3> are obtained, and it is preferred to provide ND1>NA2 in the vicinity of the boundary between the first layer and the second layer. Thus, the brightness can be improved.
JP17014180A 1980-12-02 1980-12-02 Gap light emitting diode Granted JPS5793589A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17014180A JPS5793589A (en) 1980-12-02 1980-12-02 Gap light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17014180A JPS5793589A (en) 1980-12-02 1980-12-02 Gap light emitting diode

Publications (2)

Publication Number Publication Date
JPS5793589A true JPS5793589A (en) 1982-06-10
JPS6244835B2 JPS6244835B2 (en) 1987-09-22

Family

ID=15899420

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17014180A Granted JPS5793589A (en) 1980-12-02 1980-12-02 Gap light emitting diode

Country Status (1)

Country Link
JP (1) JPS5793589A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599565U (en) * 1982-07-08 1984-01-21 三洋電機株式会社 gallium phosphorus light emitting diode
EP0631330A2 (en) * 1993-05-31 1994-12-28 Shin-Etsu Handotai Company Limited A GaP pure green light emitting element substrate
US6479312B1 (en) 1999-10-29 2002-11-12 Shin-Etsu Handotai Co., Ltd. Gallium phosphide luminescent device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599565U (en) * 1982-07-08 1984-01-21 三洋電機株式会社 gallium phosphorus light emitting diode
EP0631330A2 (en) * 1993-05-31 1994-12-28 Shin-Etsu Handotai Company Limited A GaP pure green light emitting element substrate
EP0631330A3 (en) * 1993-05-31 1995-03-22 Shinetsu Handotai Kk A GaP pure green light emitting element substrate.
US6479312B1 (en) 1999-10-29 2002-11-12 Shin-Etsu Handotai Co., Ltd. Gallium phosphide luminescent device

Also Published As

Publication number Publication date
JPS6244835B2 (en) 1987-09-22

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