JPS599565U - gallium phosphorus light emitting diode - Google Patents

gallium phosphorus light emitting diode

Info

Publication number
JPS599565U
JPS599565U JP10387282U JP10387282U JPS599565U JP S599565 U JPS599565 U JP S599565U JP 10387282 U JP10387282 U JP 10387282U JP 10387282 U JP10387282 U JP 10387282U JP S599565 U JPS599565 U JP S599565U
Authority
JP
Japan
Prior art keywords
junction
emitting diode
light emitting
gallium phosphorus
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10387282U
Other languages
Japanese (ja)
Inventor
健太郎 井上
高須　広海
Original Assignee
三洋電機株式会社
鳥取三洋電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三洋電機株式会社, 鳥取三洋電機株式会社 filed Critical 三洋電機株式会社
Priority to JP10387282U priority Critical patent/JPS599565U/en
Publication of JPS599565U publication Critical patent/JPS599565U/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図は従来の発光ダイオードの模式図、第２図は本考
案実施例のガリウム燐発光ダイオードの模式図、第３図
はその発光ダイオードの不純物濃度の状態図である。 図に於て１は基板、２は第１のＮ層３は第１のＰ層、４
は第１のＰＮ接合、５は第２のＰ層、６は第２のＮ層、
７は第３のＮ層、８は第２のＰＮ接合、９はオーミック
電極である。FIG. 1 is a schematic diagram of a conventional light emitting diode, FIG. 2 is a schematic diagram of a gallium phosphorous light emitting diode according to an embodiment of the present invention, and FIG. 3 is a state diagram of the impurity concentration of the light emitting diode. In the figure, 1 is the substrate, 2 is the first N layer, 3 is the first P layer, 4
is the first PN junction, 5 is the second P layer, 6 is the second N layer,
7 is a third N layer, 8 is a second PN junction, and 9 is an ohmic electrode.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] ガリウム燐基板上に設けられた赤色発光の第１のＰＮ接
合と、第１のＰＮ接合の上に表面側がＮ層となるように
設けられた緑色発光の第２のＰＮ接合と、第２のＰＮ接
合の上に設けられたオーミック電極とを具備したガリウ
ム燐発光ダイオードにおいて、前記第２のＰＮ接合のＮ
層は接合側の低不純物濃度領域と電極側の高不純物濃度
領域とを含んでいる事を特徴とするガリウム燐発光タ身
オA first PN junction that emits red light provided on the gallium phosphorus substrate, a second PN junction that emits green light that is provided on the first PN junction so that the surface side is an N layer, and In the gallium phosphorous light emitting diode comprising an ohmic electrode provided on the PN junction, the N of the second PN junction is
The layer includes a low impurity concentration region on the junction side and a high impurity concentration region on the electrode side.
JP10387282U 1982-07-08 1982-07-08 gallium phosphorus light emitting diode Pending JPS599565U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10387282U JPS599565U (en) 1982-07-08 1982-07-08 gallium phosphorus light emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10387282U JPS599565U (en) 1982-07-08 1982-07-08 gallium phosphorus light emitting diode

Publications (1)

Publication Number Publication Date
JPS599565U true JPS599565U (en) 1984-01-21

Family

ID=30244148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10387282U Pending JPS599565U (en) 1982-07-08 1982-07-08 gallium phosphorus light emitting diode

Country Status (1)

Country Link
JP (1) JPS599565U (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151485A (en) * 1974-05-27 1975-12-05
JPS5661182A (en) * 1979-10-24 1981-05-26 Toshiba Corp Gap green light-emitting element
JPS5793589A (en) * 1980-12-02 1982-06-10 Semiconductor Res Found Gap light emitting diode

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50151485A (en) * 1974-05-27 1975-12-05
JPS5661182A (en) * 1979-10-24 1981-05-26 Toshiba Corp Gap green light-emitting element
JPS5793589A (en) * 1980-12-02 1982-06-10 Semiconductor Res Found Gap light emitting diode

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