JPS5941387U - Electrode extraction structure of light emitting element - Google Patents
Electrode extraction structure of light emitting elementInfo
- Publication number
- JPS5941387U JPS5941387U JP13652182U JP13652182U JPS5941387U JP S5941387 U JPS5941387 U JP S5941387U JP 13652182 U JP13652182 U JP 13652182U JP 13652182 U JP13652182 U JP 13652182U JP S5941387 U JPS5941387 U JP S5941387U
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- insulating substrate
- impurity region
- extraction structure
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来の発光ダイオード表示素子の構造を示す平
面図、第２図は第１図のｎ−ｎ’線に沿って切断して示
す断面図、第３図はこの考案の発光素子の電極取出構造
の一実施例を示す平面図、第４図は第３図のＩＶ−ＩＶ
線の断面図、第５図ａおよび第５図すは同上発光素子の
電極取出構造の製造工程を説明するための図、第６図は
同上発光素子の電極取出構造の発光領域の接続例を示す
図、第７図はこの考案の発光素子の電極取出構造の他の
実施例の平面図、第８図すないし第８図Ｃはそれぞれ第
７図め発光素子の電極取出構造の製造工程を説明するた
めの図である。
１Ａ・・・化合物半導体基板、ＩＢ・・・絶縁性基板、
２Ｂ、 ３Ｂ、 ２Ｃ，３Ｃ・・・Ｎ型の不純物領
域、５Ａ。
７Ａ、１２Ａ、１４Ａ、５Ｂ、７Ｂ、１２Ｂ。
１４Ｂ・・・Ｐ型の不純物領域、１８Ａ、１９Ａ。
２１Ａ、２４Ａ、１８Ｂ、１９Ｂ、２１Ｂ、２４Ｂ・・
・電極。
２Ｃ９Ａ ＢＣ［６Ａ
２１４６Ａ Ｉ３Ａ ２４Ａ 笛Ｌ
ＲFig. 1 is a plan view showing the structure of a conventional light emitting diode display element, Fig. 2 is a sectional view taken along the line nn' in Fig. 1, and Fig. 3 is a plan view showing the structure of a conventional light emitting diode display element. A plan view showing an example of the electrode extraction structure, FIG. 4 is taken from IV-IV in FIG.
5a and 5 are diagrams for explaining the manufacturing process of the electrode lead-out structure of the above light-emitting device, and FIG. Figure 7 is a plan view of another embodiment of the electrode lead-out structure of the light-emitting element of this invention, and Figures 8 to 8C respectively show the manufacturing process of the electrode lead-out structure of the light-emitting element as shown in Figure 7. It is a figure for explaining. 1A... compound semiconductor substrate, IB... insulating substrate,
2B, 3B, 2C, 3C...N-type impurity region, 5A. 7A, 12A, 14A, 5B, 7B, 12B. 14B...P-type impurity region, 18A, 19A. 21A, 24A, 18B, 19B, 21B, 24B...
·electrode. 2C9A BC [6A 2146A I3A 24A Whistle L
R
Claims (1)
れた第１の導電型の不純物領域と、この不純物領域に形
成され上記半絶縁性基板または絶縁性基板の表面に対し
て上記不純物領域とともに、垂直方向にＰＮ接合を形成
する上記第１の導電型とは逆の第２の導電型の不純物領
域と、上記第１および第２の導電型の不純物領域の表面
に形成されて取り出される電極とよりなる発光素子の電
極、 取出構造。an impurity region of a first conductivity type formed in a semi-insulating substrate or an insulating substrate of a compound semiconductor, and a surface of the semi-insulating substrate or insulating substrate formed in the impurity region, together with the impurity region; an impurity region of a second conductivity type opposite to the first conductivity type forming a PN junction in the vertical direction; and an electrode formed on and taken out from the surfaces of the impurity regions of the first and second conductivity types; The electrode and extraction structure of the light emitting device consists of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13652182U JPS5941387U (en) | 1982-09-10 | 1982-09-10 | Electrode extraction structure of light emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13652182U JPS5941387U (en) | 1982-09-10 | 1982-09-10 | Electrode extraction structure of light emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5941387U true JPS5941387U (en) | 1984-03-16 |
Family
ID=30306932
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13652182U Pending JPS5941387U (en) | 1982-09-10 | 1982-09-10 | Electrode extraction structure of light emitting element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5941387U (en) |
-
1982
- 1982-09-10 JP JP13652182U patent/JPS5941387U/en active Pending
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