JPS5661182A - Gap green light-emitting element - Google Patents

Gap green light-emitting element

Info

Publication number
JPS5661182A
JPS5661182A JP13635979A JP13635979A JPS5661182A JP S5661182 A JPS5661182 A JP S5661182A JP 13635979 A JP13635979 A JP 13635979A JP 13635979 A JP13635979 A JP 13635979A JP S5661182 A JPS5661182 A JP S5661182A
Authority
JP
Japan
Prior art keywords
emitting element
green light
type gap
gap layer
donor concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13635979A
Other languages
Japanese (ja)
Inventor
Masaru Kawachi
Masami Iwamoto
Tatsuro Beppu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13635979A priority Critical patent/JPS5661182A/en
Publication of JPS5661182A publication Critical patent/JPS5661182A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/0004—Devices characterised by their operation
    • H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To obtain a GaP green light-emitting element having an improved luminance and reliability by specifying that the donor concentration of the N<-> type GaP layer of a GaP green light-emitting element having a P<+>N<->N<+>N structure be less than 5X10<16>/cm<3>, and providing a protective film on the exposed portion of the P-N junction. CONSTITUTION:On an N type GaP substrate, a composite structure comprising an N<+> type GaP layer, N<-> type GaP layer and P<+> type GaP layer is formed by epitaxial growth to form a GaP green light-emitting element. In this, the donor concentration of the N<-> type GaP layer is specified: less than 5X10<16>/cm<3>. Moreover, the exposed portion of the P-N junction is covered with an oxide film of Al2O3 or the like. Such specification of the donor concentration prevents the deterioration of the optical output, and also the existence of the Al2O3 protective film prevents the deterioration. Therefore, the life characteristics can be improved.
JP13635979A 1979-10-24 1979-10-24 Gap green light-emitting element Pending JPS5661182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13635979A JPS5661182A (en) 1979-10-24 1979-10-24 Gap green light-emitting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13635979A JPS5661182A (en) 1979-10-24 1979-10-24 Gap green light-emitting element

Publications (1)

Publication Number Publication Date
JPS5661182A true JPS5661182A (en) 1981-05-26

Family

ID=15173327

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13635979A Pending JPS5661182A (en) 1979-10-24 1979-10-24 Gap green light-emitting element

Country Status (1)

Country Link
JP (1) JPS5661182A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599984A (en) * 1982-07-08 1984-01-19 Sanyo Electric Co Ltd Gallium phosphide green light emitting diode
JPS599983A (en) * 1982-07-08 1984-01-19 Sanyo Electric Co Ltd Manufacture of gallium phosphide green light emitting diode
JPS599565U (en) * 1982-07-08 1984-01-21 三洋電機株式会社 gallium phosphorus light emitting diode
JPS5918687A (en) * 1982-07-21 1984-01-31 Sanyo Electric Co Ltd Manufacture of gallium phosphide light emitting diode

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS599984A (en) * 1982-07-08 1984-01-19 Sanyo Electric Co Ltd Gallium phosphide green light emitting diode
JPS599983A (en) * 1982-07-08 1984-01-19 Sanyo Electric Co Ltd Manufacture of gallium phosphide green light emitting diode
JPS599565U (en) * 1982-07-08 1984-01-21 三洋電機株式会社 gallium phosphorus light emitting diode
JPH0550154B2 (en) * 1982-07-08 1993-07-28 Sanyo Electric Co
JPS5918687A (en) * 1982-07-21 1984-01-31 Sanyo Electric Co Ltd Manufacture of gallium phosphide light emitting diode
JPH0550155B2 (en) * 1982-07-21 1993-07-28 Sanyo Electric Co

Similar Documents

Publication Publication Date Title
JPS51114886A (en) Photocoupling semiconductor device and its manufacturing process
JPS5640292A (en) Semiconductor laser
JPS5661182A (en) Gap green light-emitting element
JPS5312288A (en) Light emitting semiconductor device
JPS6490584A (en) Algainp visible semiconductor light emitting element
JPS5380988A (en) Light emitting diode
JPS52114289A (en) Semiconductor light emittiing element
JPS5417682A (en) Semiconductor and its manufacture
JPS5380989A (en) Light emitting diode
JPS52146585A (en) Photo semiconductor element
JPS55125692A (en) Semiconductor laser
JPS5721876A (en) Photosensor
JPS54141596A (en) Semiconductor device
JPS5418691A (en) Manufacture of pn-junction type light emitting diode
JPS55108785A (en) Galium phosphide green luminous element
JPS5670676A (en) Luminous diode
JPS559480A (en) Large light output, lateral mode of semiconductor laser element
GB1328303A (en) Ga as diode-phosphor lamps
JPS5567178A (en) Luminous semiconductor element
JPS5363884A (en) Light emitting diode display element
JPS52147088A (en) Light emitting device
JPS5342748A (en) Photo semiconductor device
JPS6420690A (en) Optical integrated element
JPS57181178A (en) Element for light emission and detection
JPS52151579A (en) Semiconductor device