JPS6054360U - semiconductor laser - Google Patents
semiconductor laserInfo
- Publication number
- JPS6054360U JPS6054360U JP14609183U JP14609183U JPS6054360U JP S6054360 U JPS6054360 U JP S6054360U JP 14609183 U JP14609183 U JP 14609183U JP 14609183 U JP14609183 U JP 14609183U JP S6054360 U JPS6054360 U JP S6054360U
- Authority
- JP
- Japan
- Prior art keywords
- conductivity type
- semiconductor laser
- layer
- cladding layer
- mesa stripe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来のＡＩＧａＡＳ／ＧａＡＳ ＨＩＳ型半導
体レーザの断面図、第２図は本考案の第１の実施例に係
わるＡ ／ ＧａＡｓ／ＧａＡｓ半導体レーザの断面図
、第３図ａ及びｂはそれぞれ第１図のＨＩＳ型半導体レ
ーザ及び本考案の第１の実施例の等節回路、第４図は本
考案の第２の実施例に係わるＡｌ ＧａＡｓ／ＧａＡｓ
半導体レーザの断面図である。
１．２０・・・・・・ｎ−ＧａＡｓ基板、２，２１・・
・・・・バッファ一層、３，２２・・・・・・ｎ型クラ
ッド層、４゜２３・・・・・・活性層、５，２４・・・
・・・Ｐ型クラッド層、６．２５．４０・・・・・・キ
ャップ層、７，２１・・・・・・電流阻止層、８，２７
・・・・・・Ｐ電極、９，２８・・・・・・ｎ電極、１
０，３０・・・・・・主たる発光領域の活性領域、１１
．３１・・・・・・その他の活性領域、２９・・・・・
・メサストライプ、４１・・・・・・Ｐ壁領域。Figure 1 is a cross-sectional view of a conventional AIGaAS/GaAS HIS type semiconductor laser, Figure 2 is a cross-sectional view of an A/GaAs/GaAs semiconductor laser according to the first embodiment of the present invention, and Figures 3a and 3b are respectively FIG. 1 shows an HIS type semiconductor laser and an equinodal circuit according to the first embodiment of the present invention, and FIG. 4 shows an Al GaAs/GaAs semiconductor laser according to the second embodiment of the present invention.
FIG. 2 is a cross-sectional view of a semiconductor laser. 1.20...n-GaAs substrate, 2,21...
...Buffer single layer, 3,22...N-type cladding layer, 4゜23...Active layer, 5,24...
... P-type cladding layer, 6.25.40 ... Cap layer, 7,21 ... Current blocking layer, 8,27
...P electrode, 9,28...N electrode, 1
0,30...Active region of main light emitting region, 11
．． 31...Other active regions, 29...
- Mesa stripe, 41...P wall area.
Claims (1)
体基板と、前記メサストライプ上に形成しである第１伝
導型の第１クラッド層と、この第１クラッド層の上に形
成しである活性層と、この活性層の上に形成しである第
２伝導型の第２クラッド層と、この第２のクラッド層の
上に形成しである第１伝導型の電流阻止層とを備え、前
記電流阻止層が前記メサストライプ上で欠けていること
を特徴とする半導体レーザー。a first conductivity type semiconductor substrate having a mesa stripe formed thereon; a first conductivity type first cladding layer formed on the mesa stripe; and a first conductivity type semiconductor substrate formed on the first cladding layer. an active layer, a second cladding layer of a second conductivity type formed on the active layer, and a current blocking layer of a first conductivity type formed on the second cladding layer, A semiconductor laser characterized in that the current blocking layer is missing on the mesa stripe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14609183U JPS6054360U (en) | 1983-09-21 | 1983-09-21 | semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14609183U JPS6054360U (en) | 1983-09-21 | 1983-09-21 | semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6054360U true JPS6054360U (en) | 1985-04-16 |
Family
ID=30325293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14609183U Pending JPS6054360U (en) | 1983-09-21 | 1983-09-21 | semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6054360U (en) |
-
1983
- 1983-09-21 JP JP14609183U patent/JPS6054360U/en active Pending
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