JPS5822760U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5822760U JPS5822760U JP11639481U JP11639481U JPS5822760U JP S5822760 U JPS5822760 U JP S5822760U JP 11639481 U JP11639481 U JP 11639481U JP 11639481 U JP11639481 U JP 11639481U JP S5822760 U JPS5822760 U JP S5822760U
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- semiconductor equipment
- type
- layer
- layer made
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
・第１図は本考案の一実施例としてのＩｎＧａＡｓＰ／
ＩｎＰ半導体レーザの斜視図、第２図は本考案の他の実
施例としてノＧａＡｌＡｓ／ＧａＡｓ、 ＣＰＳ型半導
体レーザの斜視図である。
図において、１・・・・・・ｎ型ＩｎＰ基板、２・・・
・・・ｐ型ＩｎＰ埋め込み層、３・・・・・・ＩｎＧａ
ＡｓＰ活性層、４・・・・・・ｎ型ＩｎＧａＡｓＰ層、
５−−−−−− ｐ型ＩｎＰクラッド層、６ ゛・・・
・・・Ｐ型ＩｎＧａＡｓＰキャップ層、７・・・・・・
ＳｉＯ２絶縁膜、８・・・・・・Ｃｒ（またはＴｉ）か
らなる第１の金属層、９・・・・・・Ｍｏ（またはＷ）
からなる第２の金属層、１０・・・・・・Ａｕからなる
第３の金属層、１１・・・・・・対向電極、２１・・・
・・・ｎ型ＧａＡｓ基板、２２・・・・・・チャンネル
部、２３・・・・・・ｎ型ＧａＡｌＡｓクラッド層、２
４−−−−−−ＧａＡＩＡｓ活性層、２５−−−−−−
ｐ型ＧａＡｌＡｓ ’ｙラッド層、２６・・・・・・
ｎ型ＧａＡｓキャップ層、２７・・・・・・ＳｉＯ２絶
縁膜、２８・・・・・・Ｚｎｎ拡散型型層２９・・・・
・・Ａｕ−Ｚｎ合金（またはＣｒ）からなる第１の金属
層、３０・・・・・・Ｗからなる第２の金属層、３１・
・・・・・Ａｕからなる第３の金属層、３２・・・・・
・対向電極。・Figure 1 shows InGaAsP/
FIG. 2 is a perspective view of a GaAlAs/GaAs, CPS type semiconductor laser as another embodiment of the present invention. In the figure, 1... n-type InP substrate, 2...
...p-type InP buried layer, 3...InGa
AsP active layer, 4... n-type InGaAsP layer,
5------ p-type InP cladding layer, 6゛...
...P-type InGaAsP cap layer, 7...
SiO2 insulating film, 8...First metal layer made of Cr (or Ti), 9... Mo (or W)
10... Third metal layer made of Au, 11... Counter electrode, 21...
... n-type GaAs substrate, 22 ... channel section, 23 ... n-type GaAlAs cladding layer, 2
4-------GaAIAs active layer, 25-------
p-type GaAlAs 'y rad layer, 26...
n-type GaAs cap layer, 27...SiO2 insulating film, 28...Znn diffusion type layer 29...
...First metal layer made of Au-Zn alloy (or Cr), 30...Second metal layer made of W, 31.
...Third metal layer made of Au, 32...
・Counter electrode.
Claims (1)
極が該半導体とオーミック接触を有する第１の金属層と
該第１の金属層上のＭｏもしくはＷからなる第２の金属
層と該第２の金属層上のＡｕまたはＡｕ−３ｎ系ソルダ
ー、Ｉｎ系ソ／Ｌ／グー、ｐｂ−３ｎ系ソルダー等のゾ
ルグ一群の少なくとも１者を有する第３の金属層とから
なることを特徴とする半導体装置。In a ■-■ group compound semiconductor device, the output side electrode of the device includes a first metal layer having ohmic contact with the semiconductor, a second metal layer made of Mo or W on the first metal layer, and a second metal layer made of Mo or W on the first metal layer; and a third metal layer having at least one member of the Sorg group such as Au or Au-3n-based solder, In-based SO/L/GOO, and PB-3N-based solder on the second metal layer. Semiconductor equipment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11639481U JPS5822760U (en) | 1981-08-05 | 1981-08-05 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11639481U JPS5822760U (en) | 1981-08-05 | 1981-08-05 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5822760U true JPS5822760U (en) | 1983-02-12 |
Family
ID=29910618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11639481U Pending JPS5822760U (en) | 1981-08-05 | 1981-08-05 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5822760U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59159583A (en) * | 1983-03-02 | 1984-09-10 | Hitachi Ltd | Semiconductor light emitting device |
| JP2015115377A (en) * | 2013-12-10 | 2015-06-22 | 株式会社リコー | Compound semiconductor device, light source device, laser device and compound semiconductor device manufacturing method |
-
1981
- 1981-08-05 JP JP11639481U patent/JPS5822760U/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59159583A (en) * | 1983-03-02 | 1984-09-10 | Hitachi Ltd | Semiconductor light emitting device |
| JP2015115377A (en) * | 2013-12-10 | 2015-06-22 | 株式会社リコー | Compound semiconductor device, light source device, laser device and compound semiconductor device manufacturing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5822760U (en) | semiconductor equipment | |
| JPS6016562U (en) | Shock barrier type semiconductor device | |
| JP2555300Y2 (en) | Diode for solar cell device | |
| JPS6054360U (en) | semiconductor laser | |
| JPS5977222U (en) | semiconductor element | |
| JPS58120670U (en) | semiconductor laser | |
| JPS60187550U (en) | semiconductor laser | |
| JPS6364069U (en) | ||
| JPS6134761U (en) | semiconductor laser | |
| JPS6139959U (en) | semiconductor equipment | |
| JPS6398662U (en) | ||
| JPS58116259U (en) | semiconductor laser | |
| JPS5866664U (en) | Buried structure semiconductor laser device | |
| JPS58124972U (en) | Heat sink for arrayed laser diodes | |
| JPS5866654U (en) | Glass packaging type semiconductor device | |
| JPS60181057U (en) | semiconductor equipment | |
| JPS6134731U (en) | Compound semiconductor single crystal wafer | |
| JPS60103860U (en) | semiconductor laser equipment | |
| JPS6134741U (en) | semiconductor equipment | |
| JPS6134757U (en) | semiconductor light emitting device | |
| JPS60136165U (en) | Stripe structure of semiconductor laser device | |
| JPS58155857U (en) | semiconductor laser | |
| JPS6166971U (en) | ||
| JPS5856459U (en) | semiconductor equipment | |
| JPS5892748U (en) | semiconductor light emitting device |