JPS60103860U - semiconductor laser equipment - Google Patents
semiconductor laser equipmentInfo
- Publication number
- JPS60103860U JPS60103860U JP19780883U JP19780883U JPS60103860U JP S60103860 U JPS60103860 U JP S60103860U JP 19780883 U JP19780883 U JP 19780883U JP 19780883 U JP19780883 U JP 19780883U JP S60103860 U JPS60103860 U JP S60103860U
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser equipment
- electrode
- solder
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Abstract] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は従来例を示す断面図、第２図は本考案の実施例
を示す断面図である。
１１・・・半導体レーザチップ、１２・・・Ｓｉサブマ
ウント、１３・・・第１電極、１４・・・第２電極、１
５・・・Ｉｎハンダ、１６・・・Ｓｎ層、１７・・・ヒ
ートシンク、１８・・・金層、１９・・・Ｉｎ −Ｓｎ
ハンダ。FIG. 1 is a sectional view showing a conventional example, and FIG. 2 is a sectional view showing an embodiment of the present invention. DESCRIPTION OF SYMBOLS 11... Semiconductor laser chip, 12... Si submount, 13... First electrode, 14... Second electrode, 1
5...In solder, 16...Sn layer, 17...heat sink, 18...gold layer, 19...In-Sn
Solder.
Claims (1)
第１電極にＩｎハンダを用いて上記チップが固着された
Ｓｉサブマウント、該別サブマウントの他主面に形成さ
れ７’、ｚＡｕからなるオーミック性の第２電極上に積
層されたＳｎ層、該Ｓｎ層がＩｎ−３ｎハンダを用いて
固着されたヒートシンクを具備したことを特徴とする半
導体レーザ装置。A semiconductor laser chip, a Si submount having a first electrode formed on its main surface, the chip being fixed to the first electrode using In solder, and another submount formed on the other main surface of the semiconductor laser chip; What is claimed is: 1. A semiconductor laser device comprising: an Sn layer laminated on an ohmic second electrode, and a heat sink to which the Sn layer is fixed using In-3n solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19780883U JPS60103860U (en) | 1983-12-21 | 1983-12-21 | semiconductor laser equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19780883U JPS60103860U (en) | 1983-12-21 | 1983-12-21 | semiconductor laser equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS60103860U true JPS60103860U (en) | 1985-07-15 |
Family
ID=30423315
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19780883U Pending JPS60103860U (en) | 1983-12-21 | 1983-12-21 | semiconductor laser equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60103860U (en) |
-
1983
- 1983-12-21 JP JP19780883U patent/JPS60103860U/en active Pending
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