JPS55115372A - Photovoltaic device - Google Patents

Abstract

PURPOSE: To reduce a leakage current, by making a thin Si layer between neighboring electrodes when a plurality of the first electrodes are produced on an insulating substrate capable of being penetrated by visible light and the second electrodes corresponding to the first electrodes through across the amorphous Si layer are provided to build a device which has a plurality of electricity generating sections.

CONSTITUTION: A plurality of the first electrodes 12 are coated at a spacing on an insulating substrate 7 of glass or the like capable of being penetrated by visible light. A laminated amorphous Si layer 11 comprising a p-type layer 3, a nondoped layer 4 and an n-type layer 5 is grown on the entire surface including the first electrodes. The growth of the layer 11 is cheaply effected for mass production by glow discharge under an atmosphere of a compound such as silane or fluorosilicon. The second electrodes 13 are provided on the layer 11 so that the second electrodes correspond to the first ones 12. A device is thus constituted. A groove 20 is provided in the portion of the layer 11 whereon the electrodes 12, 13 are not located or the portion of the layer 11 is entirely removed to provide a region 21. Th resistance between the electrodes 12, 13 is thus increased to reduce a leakage current.

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