JPS57109324A - Method for junction and formation of amorphous silicon film - Google Patents

Method for junction and formation of amorphous silicon film

Info

Publication number
JPS57109324A
JPS57109324A JP55185841A JP18584180A JPS57109324A JP S57109324 A JPS57109324 A JP S57109324A JP 55185841 A JP55185841 A JP 55185841A JP 18584180 A JP18584180 A JP 18584180A JP S57109324 A JPS57109324 A JP S57109324A
Authority
JP
Japan
Prior art keywords
type
junction
formation
amorphous silicon
silicon film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55185841A
Other languages
Japanese (ja)
Inventor
Mitsuhiko Tashiro
Nobuki Ibaraki
Yoshiko Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55185841A priority Critical patent/JPS57109324A/en
Publication of JPS57109324A publication Critical patent/JPS57109324A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To obtain P-N or P-I-N junction for the subject amorphous silicon film by a method wherein, using P type and N type, or P type, N type and I type of silicon targets, a sputtering is performed on each target successively in the order of the conductive type corresponding to the desired junction. CONSTITUTION:An N type and P type targets, wherein impurities are doped in advance, and the I type silicon target, wherein no impurities are doped, are used. These targets are sputtered successively in the atmosphere of argon, or mixture of argon and hydrogen. As a result, the junction and formation can be controlled easily and the desired junction can also be obtained without using poisonous gas. The diode obtained using this method has excellent characteristics.
JP55185841A 1980-12-26 1980-12-26 Method for junction and formation of amorphous silicon film Pending JPS57109324A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55185841A JPS57109324A (en) 1980-12-26 1980-12-26 Method for junction and formation of amorphous silicon film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55185841A JPS57109324A (en) 1980-12-26 1980-12-26 Method for junction and formation of amorphous silicon film

Publications (1)

Publication Number Publication Date
JPS57109324A true JPS57109324A (en) 1982-07-07

Family

ID=16177809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55185841A Pending JPS57109324A (en) 1980-12-26 1980-12-26 Method for junction and formation of amorphous silicon film

Country Status (1)

Country Link
JP (1) JPS57109324A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110199376A (en) * 2016-12-06 2019-09-03 澳大利亚国立大学 Solar battery manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110199376A (en) * 2016-12-06 2019-09-03 澳大利亚国立大学 Solar battery manufacture
JP2020504441A (en) * 2016-12-06 2020-02-06 ジ オーストラリアン ナショナル ユニバーシティ Manufacture of solar cells

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