JPS61139072A - Photovoltaic device - Google Patents
Photovoltaic deviceInfo
- Publication number
- JPS61139072A JPS61139072A JP59260002A JP26000284A JPS61139072A JP S61139072 A JPS61139072 A JP S61139072A JP 59260002 A JP59260002 A JP 59260002A JP 26000284 A JP26000284 A JP 26000284A JP S61139072 A JPS61139072 A JP S61139072A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- conductivity
- electrode
- shaped
- sih4
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 238000010248 power generation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract description 2
- 238000005566 electron beam evaporation Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 34
- 239000010408 film Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000010979 ruby Substances 0.000 description 1
- 229910001750 ruby Inorganic materials 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は複数個の光起電力素子から成る光起電力装置に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Application of the Invention] The present invention relates to a photovoltaic device comprising a plurality of photovoltaic elements.
薄膜半導体層を用いて、同一基板上に複数個の光起電力
素子を、その半導体層は共通に形成することが従来より
知られている。しかし、予想されるように、このような
構造では素子間の半導体層を通してリーク電流が流れる
という不都合があった。これを防ぐために、半導体層の
うちの高導電度を有する部分を、除去してしまう特開昭
５５−１２０１８１号公報に記載の方法、あるいは絶縁
物に変えてしまう特公昭５９−１０５９３号公報に記載
の方法が知られていた。これらの方法は、リーク電流を
格段に低減できる有効な方法であるが、一方、それぞれ
問題点のあることがわかった。2. Description of the Related Art It is conventionally known to form a plurality of photovoltaic elements on the same substrate using a thin film semiconductor layer using a common semiconductor layer. However, as expected, such a structure has the disadvantage that leakage current flows through the semiconductor layer between the elements. In order to prevent this, the method described in Japanese Patent Application Laid-Open No. 55-120181 involves removing the highly conductive portion of the semiconductor layer, or the method described in Japanese Patent Publication No. 59-10593, which involves replacing it with an insulator. The method described was known. Although these methods are effective methods for significantly reducing leakage current, it has been found that each method has its own problems.
すなわち、絶縁膜にする方法では、酸化の際の高温度に
よる素子の劣化や、イオン打込みによる素子へのダメー
ジの恐れがある。また、エツチング除去する方法では、
エツチング後活性層が大気中に露出するため、外部雰囲
気による汚染の恐れがある。That is, in the method of forming an insulating film, there is a risk of deterioration of the element due to the high temperature during oxidation and damage to the element due to ion implantation. In addition, in the etching removal method,
Since the active layer is exposed to the atmosphere after etching, there is a risk of contamination from the external atmosphere.
本発明の目的は一同一基板上の同一半導体層でできてい
る光起電力素子を、簡単な手段で実効的に分離した装置
を提供することにある。An object of the present invention is to provide a device in which photovoltaic elements made of the same semiconductor layer on the same substrate can be effectively separated by simple means.
本発明においては、装置形成後に低抵抗部分を除去もし
くは絶縁物化するのではなく、非単結晶半導体層はいず
れの部分も少くとも１０−３ Ω−１ｃｍ−１以下の導
電率で形成し、半導体形成後に、その表面の一部分に紫
外、もしくは可視のレーザ光を照射して低抵抗化するも
のである。本発明では、熱処理時間が１秒以下のレーザ
を用いた短時間熱処理法を用いる。レーザとして、パル
スレーザとＣＷレーザがあり、ＣＷの場合、走査速度を
早くすれば実質的に短時間の熱処理が可能である。In the present invention, instead of removing the low-resistance portion or making it an insulator after forming the device, the non-single crystal semiconductor layer is formed with a conductivity of at least 10-3 Ω-1 cm-1 or less, and the semiconductor After formation, a portion of the surface is irradiated with ultraviolet or visible laser light to lower the resistance. In the present invention, a short-time heat treatment method using a laser is used in which the heat treatment time is 1 second or less. Lasers include pulsed lasers and CW lasers, and in the case of CW, heat treatment can be performed in a substantially short time if the scanning speed is increased.
かかるレーザの例として次のものがある。パルスレーザ
として、エキシマレーザ（波長１５７〜３５１ｎｍ）
、ルビーレーザ（６９４止）、ネオジウムＹＡＧレーザ
（２６６，５３２，１０１０６４ｎ 、ガラスレーザ（
５３１ｎｍ）やアレキサンドライトレーザ（７００〜８
１８ｎｍ）などがある。ＣＷレーザとして、Ａｒイオン
レーザ（２５７ｎｍ）やＨｅＮｅレーザ（６３３ｎｍ）
などがある。金遣、アモルファスシリコンのレーザアニ
ールとしてＱスイッチのＮｄ：ＹＡＧレーザ（１０６４
ｎｍ）が用いられた例は知られていたが、このような長
波長光では、アモルファスシリコン膜の吸収係数が小さ
く膜全体に光が吸収されるため、極めて薄い表面層のみ
を処理することは出来なかった。従って良好な太陽電池
性能は得られていない。Examples of such lasers include: As a pulse laser, excimer laser (wavelength 157-351 nm)
, ruby laser (694 stop), neodymium YAG laser (266,532,101064n), glass laser (
531nm) and alexandrite laser (700-8
18 nm). As a CW laser, Ar ion laser (257 nm) and HeNe laser (633 nm) are used.
and so on. Q-switched Nd:YAG laser (1064
There have been known examples in which amorphous silicon film was used for long-wavelength light, but since the absorption coefficient of the amorphous silicon film is small and the light is absorbed by the entire film, it is difficult to treat only the extremely thin surface layer. I could not do it. Therefore, good solar cell performance has not been obtained.
アモルファスシリコン太陽電池において、レーザアニー
ルする２層あるいはｎＮｊの全膜厚は２０〜４０ｎｍで
ある。このため、上記各種レーザ光の中で、波長４００
ｎｍ以下のレーザ光を用いれば吸収深さは約１０ｎｍで
、縦方向の上部半導体層のみ熱処理できるなどの利点を
有する。これに適したレーザとして、エキシマレーザ（
波長二重型で２６６ｎｍ）がある。特に、エキシマレー
ザは励起ガスの種類を変えて、発振波長を変えることが
可能である。例えば、Ｆ ２（１５７ｎｍ）、ＡｒＦ
（１９３ｎｍ） 、 ＫｒＣ１（２２２ｎｍ）、Ｋ ｒ
Ｆ （２４８ｎｍ）、ＸｅＢｒ（２８２ｎｍ）、Ｘｅ
Ｃ１（３０８ｎｍ）とＸ ｅ Ｆ （３５１ｎｍ）で出
力も数＋Ｗ迄の大出力で大口径のレーザが得られる。In an amorphous silicon solar cell, the total thickness of the two layers or nNj to be laser annealed is 20 to 40 nm. For this reason, among the various laser beams mentioned above, wavelengths of 400
If laser light of nm or less wavelength is used, the absorption depth is about 10 nm, which has the advantage that only the upper semiconductor layer in the vertical direction can be heat-treated. An excimer laser (
There is a wavelength dual type (266 nm). In particular, the oscillation wavelength of excimer lasers can be changed by changing the type of excitation gas. For example, F2 (157 nm), ArF
(193nm), KrC1 (222nm), Kr
F (248 nm), XeBr (282 nm), Xe
With C1 (308 nm) and X e F (351 nm), a laser with a large output and a large diameter up to several + W can be obtained.
本発明は、かかる短波長のレーザを用い１表面のＰもし
くはｎ層のみを熱処理することにより、ｐもしくはｎ層
の電気抵抗を下げることを特徴としている。半導体膜と
して、Ｂ又はＡＩなどのｐ形不鈍物、Ｐ又はＡｓなとの
ｎ彫工鈍物を含有するアモルファスＳｉ：Ｈ膜、微結晶
化Ｓｉ：Ｈ膜。The present invention is characterized in that the electric resistance of the p- or n-layer is lowered by heat-treating only the p- or n-layer on one surface using such a short wavelength laser. The semiconductor film is an amorphous Si:H film or a microcrystalline Si:H film containing a p-type dull material such as B or AI, or an n-type dull material such as P or As.
５ｉＧｅ：Ｈ膜、ＳｉＮ：Ｈ膜やＳｉＣ： Ｈ膜などが
ある。不純物を該Ｓｉ膜中に含有させる工程として、プ
ラズマＣＶＤなどの膜形成中にガスから導入する方法と
ノンドープ又は低濃度ドープ層中にイオン打込み法で導
入する方法などがある。Examples include 5iGe:H film, SiN:H film, and SiC:H film. The process of incorporating impurities into the Si film includes a method of introducing them from a gas during film formation such as plasma CVD, and a method of introducing impurities into a non-doped or lightly doped layer by ion implantation.
以下、本発明の一実施例をその製造工程に従って説明す
る。第１図に示すようにガラス基板１上に透明電極２を
形成した。パターン形成のために金属マスクを用い、Ｉ
Ｔｏ（Ｉ ｎｄｉｎｍ Ｔ ｉｎ Ｏｘｉｄｅ）を電子
ビーム蒸着法で２０００人形成した。次にガラス基板１
の全面に非晶質シリコン層３をプラズマＣＶＤ＠で形成
した。第１に２層４を１００人１次いで１層５を５００
０人、最後にｎ層６を４００人形成した。２Ｍ４の形成
にはＳ Ｉ Ｈ４、ＣＨａ ｒ Ｂ ｚ Ｈａ ｒＨ２
の混合ガスを用い、通常のアモルファスシリコン（ａ−
８ｉ：Ｈ）よりバンドギャップの広い、炭素を含んだａ
−８ｉＣ；Ｈを形成した。その導電率はｌＸｌ０−’
Ω−１・ｃｍ−”程度であった。１層５の形成にはＳｉ
Ｈ４のみを用い、その導電率は、疑似太陽光照射下でｌ
Ｘｌ０−’ Ω−１・ｃｍ−”程度であった。ｎ層形成
にはＳ Ｉ Ｈａ ｒ Ｐ Ｈ＊ ｒ Ｈｚを用い、そ
の導電率はｌＸｌ０−’ Ω−１・ｃＩｌｌ−１であっ
た。このｎ層の形成条件を従来の条件と比較して表１に
示す。An embodiment of the present invention will be described below according to its manufacturing process. As shown in FIG. 1, a transparent electrode 2 was formed on a glass substrate 1. Using a metal mask for patterning, I
A total of 2,000 layers of To (Indim Tin Oxide) were formed by electron beam evaporation. Next, glass substrate 1
An amorphous silicon layer 3 was formed on the entire surface by plasma CVD@. First, 2nd layer 4 for 100 people 1 then 1st layer 5 for 500 people
0 people, and finally formed the n layer 6 with 400 people. For the formation of 2M4, S I H4, CH r B z Ha rH2
Normal amorphous silicon (a-
8i:H) with a wider bandgap than carbon-containing a
-8iC; H was formed. Its conductivity is lXl0-'
The resistance was about Ω-1 cm-”.For the formation of one layer 5, Si
Only H4 is used, and its conductivity is l under simulated sunlight irradiation.
The conductivity was about 1X10-'Ω-1·cm-". S I Har P H * r Hz was used to form the n-layer, and the conductivity was 1X10-' Ω-1·cIll-1. Table 1 shows the conditions for forming this n-layer in comparison with conventional conditions.
従来は高導電率（１〜ＩＯΩ−１・ｃ＋ｎ−”）を得る
ために、５ｉＨａに対するＨ２の割合を多くし、圧力を
低く設定し、高パワーで形成していた。この場合には、
堆積時間が長い、ＲＦｐＯＷｅｒが高いので１層へのダ
メージの恐れがある、などの問題があった。また、ｎ層
を通しての隣接素子へのリーク電流も大きかったことは
先に述べたとおりである。これに対して本方法では、Ｒ
Ｆρｏｖｅｒを低く、ＳｉＨ４もＨ２に対してかなり多
く流すことから、短時間かつダメージの心配なくｎ層の
堆積ができる。また導電率が低いので隣接素子間のリー
ク電流もまったく問題にならなかった。ただし、素子特
性はｎ層の導電率が高いほど良いので、ａ−５ｉ：Ｈ層
形成後に素子領域のｎ層の導電率を高くするため、以下
の処理を行った。Conventionally, in order to obtain high conductivity (1 to IOΩ-1・c+n-"), the ratio of H2 to 5iHa was increased, the pressure was set low, and the formation was performed with high power. In this case,
There were problems such as a long deposition time and a risk of damage to one layer due to the high RFpOWer. Furthermore, as described above, the leakage current to adjacent elements through the n-layer was also large. On the other hand, in this method, R
Since Fρover is low and SiH4 is flowed in a considerably larger amount than H2, the n-layer can be deposited in a short time and without fear of damage. Furthermore, since the conductivity was low, leakage current between adjacent elements was not a problem at all. However, since the higher the conductivity of the n-layer, the better the element characteristics are, the following treatment was performed to increase the conductivity of the n-layer in the element region after forming the a-5i:H layer.
第２図に示すように、ａ−３ｉ：Ｈ層形成後に金属マス
ク７を置き、波長３５０ｎｍのエキシマ・レーザーを照
射した。その結果、照射面のｎ層６１のみが１Ω−１・
ＣＵＶ”程度の導電率になった。次に。As shown in FIG. 2, after the a-3i:H layer was formed, a metal mask 7 was placed and an excimer laser beam having a wavelength of 350 nm was irradiated. As a result, only the n-layer 61 on the irradiated surface was 1Ω-1.
The conductivity has reached the level of "CUV".Next.
このまま金属電極形成装置でＡ１を抵抗加熱蒸着した。A1 was then vapor-deposited by resistance heating using a metal electrode forming apparatus.
その結果、第３図に示すように金属電極８が形成され、
光起電力装置ができた。なお、本断面図では素子部分の
みを示したが、透明電極２と金属電極８は本断面以外の
部分では配線としても用いられている。エキシマ・レー
ザによるアニールは、大気中、真空中のいずれでもその
作用に違いはなかった。従って、アニールは大気中で行
っても、あるいは金属電極８形成用の真空装置中で行っ
ても良い。本作製方法で作製した太陽電池の効率は、太
陽光下でＪ ｓｃ ： １５．３ｍＡ／ｃｍ” 、Ｖｏ
ｃ ：０．８５Ｖ、 Ｆ Ｆ ： ０．６８テ変換効率
は８．８％となった。As a result, a metal electrode 8 is formed as shown in FIG.
A photovoltaic device was created. Although only the element portion is shown in this cross-sectional view, the transparent electrode 2 and the metal electrode 8 are also used as wiring in parts other than this cross-section. There was no difference in the effect of excimer laser annealing whether in air or vacuum. Therefore, the annealing may be performed in the atmosphere or in a vacuum apparatus for forming the metal electrode 8. The efficiency of the solar cell produced by this production method is J sc: 15.3 mA/cm", Vo
c: 0.85V, FF: 0.68TE, the conversion efficiency was 8.8%.
これは、従来のｎ層形成条件での変換効率８．５〜９．
０％とほとんど違わず、太陽電池の形成方法としてまっ
たく問題がないことがわかった。一方、素子間のリーク
電流は従来法ではμＡ／ｃｍ２オーダーであったものが
、本方式ではｎＡ／ａｍ”オーダーに低減され、本発明
の有効さが確認された。This is a conversion efficiency of 8.5 to 9.5% under conventional n-layer formation conditions.
It was found that there was almost no difference from 0%, and there was no problem at all as a method for forming solar cells. On the other hand, the leakage current between the elements was on the order of μA/cm2 in the conventional method, but was reduced to the order of nA/am'' in the present method, confirming the effectiveness of the present invention.
本発明によれば、非常に簡単なプロセスで素子間を分離
した構造ができ、かつ素子特性を劣化させるような影響
を与えないという効果がある。According to the present invention, it is possible to create a structure in which elements are separated by a very simple process, and there is an effect that the element characteristics are not deteriorated.
第１図は本発明の実施例の第一の製造工程を示す断面図
、第２図は第二の製造工程を示す断面図第３図は第三の
製造工程を示す断面図である。
符号の説明
１・・・ガラス基板、２・・・透明電極、３・・・非晶
質シリコン層、４・・・Ｐ層、５・・・ｉ層、６・・・
ｎ層。
７・・・金属マスク、８・・・金属電極、６１・・・ｎ
層。FIG. 1 is a cross-sectional view showing the first manufacturing process of an embodiment of the present invention, FIG. 2 is a cross-sectional view showing the second manufacturing process, and FIG. 3 is a cross-sectional view showing the third manufacturing process. Explanation of symbols 1...Glass substrate, 2...Transparent electrode, 3...Amorphous silicon layer, 4...P layer, 5...i layer, 6...
n layer. 7...Metal mask, 8...Metal electrode, 61...n
layer.
Claims (1)
た非単結晶質半導体層が形成されており、該第１及び第
２電極ではさまれた部分で発電が行われる装置において
、該第１電極もしくは第２電極、及び、そこから引き出
される配線に接続する該非単結晶質半導体層の界面近傍
部分が、該第１電極および第２電極におおわれていない
部分に比べて高い導電率を有することを特徴とする光起
電力装置。In an apparatus in which a non-single-crystalline semiconductor layer is formed on an insulating substrate, a portion of which is sandwiched between first and second electrodes, and power generation is performed at the portion sandwiched between the first and second electrodes. A portion near the interface of the non-single-crystalline semiconductor layer connected to the first electrode or the second electrode and the wiring drawn therefrom has higher conductivity than the portion not covered by the first electrode or the second electrode. A photovoltaic device comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59260002A JPS61139072A (en) | 1984-12-11 | 1984-12-11 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59260002A JPS61139072A (en) | 1984-12-11 | 1984-12-11 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61139072A true JPS61139072A (en) | 1986-06-26 |
| JPH0515073B2 JPH0515073B2 (en) | 1993-02-26 |
Family
ID=17341929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59260002A Granted JPS61139072A (en) | 1984-12-11 | 1984-12-11 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61139072A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115372A (en) * | 1979-02-27 | 1980-09-05 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS55120180A (en) * | 1979-03-09 | 1980-09-16 | Sanyo Electric Co Ltd | Fabricating method of photovoltaic device |
| JPS55121686A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS5681981A (en) * | 1979-09-21 | 1981-07-04 | Messerschmitt Boelkow Blohm | Semiconductor forming element for converting light to electric energy |
| JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
-
1984
- 1984-12-11 JP JP59260002A patent/JPS61139072A/en active Granted
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55115372A (en) * | 1979-02-27 | 1980-09-05 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS55120180A (en) * | 1979-03-09 | 1980-09-16 | Sanyo Electric Co Ltd | Fabricating method of photovoltaic device |
| JPS55121686A (en) * | 1979-03-12 | 1980-09-18 | Sanyo Electric Co Ltd | Photovoltaic device |
| JPS5681981A (en) * | 1979-09-21 | 1981-07-04 | Messerschmitt Boelkow Blohm | Semiconductor forming element for converting light to electric energy |
| JPS5745980A (en) * | 1980-09-02 | 1982-03-16 | Mitsubishi Electric Corp | Amorphous solar battery and manufacture thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0515073B2 (en) | 1993-02-26 |
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| EXPY | Cancellation because of completion of term |